ON Semiconductor NTD4855NT4G

Name: NTD4855NT4G
Brand: ON Semiconductor
SKU: 2852557-NTD4855NT4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD4855NT4G

Manufacturer:: ON Semiconductor

Ventron No:: 2852557-NTD4855NT4G

Description:: MOSFET N-CH 25V 14A DPAK

ECAD Model:

Datasheet:: NTD4855NT4G

Specifications

ON Semiconductor NTD4855NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4855NT4G.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.35W Ta 66.7W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2.95pF @ 12V
Current - Continuous Drain (Id) @ 25°C
14A Ta 98A Tc
Gate Charge (Qg) (Max) @ Vgs
32.7nC @ 4.5V
Drain to Source Voltage (Vdss)
25V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
14A
Drain-source On Resistance-Max
0.006Ohm
Pulsed Drain Current-Max (IDM)
197A
DS Breakdown Voltage-Min
25V
Avalanche Energy Rating (Eas)
220 mJ
RoHS Status
ROHS3 Compliant

Description

NTD4855NT4G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 220 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.95pF @ 12V.There is no drain current on this device since the maximum continuous current it can conduct is 14A.There is a peak drain current of 197A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 25V, it should remain above the 25V level.The transistor must receive a 25V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

NTD4855NT4G Features
the avalanche energy rating (Eas) is 220 mJ
based on its rated peak drain current 197A.
a 25V drain to source voltage (Vdss)

NTD4855NT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4855NT4G applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

NTD4855NT4G More Descriptions

Power MOSFET 25V 98A 4.3 mOhm Single N-Channel DPAK
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 14A Ta 98A Tc 17.7A 2.24W 4.35ns
Power Field-Effect Transistor, 14A I(D), 25V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to NTD4855NT4G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Lifecycle Status

Number of Pins

Published

ECCN Code

Element Configuration

Power Dissipation

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Lead Free

View Compare
NTD4855NT4G

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

1.35W Ta 66.7W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

4.3m Ω @ 30A, 10V

2.5V @ 250μA

2.95pF @ 12V

14A Ta 98A Tc

32.7nC @ 4.5V

25V

4.5V 10V

±20V

14A

0.006Ohm

197A

25V

220 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-
NTD4804N-1G

ON Semiconductor

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-55°C~175°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

1.43W Ta 107W Tc

-

-

N-Channel

-

4mOhm @ 30A, 10V

2.5V @ 250μA

4.49pF @ 12V

14.5A Ta 124A Tc

40nC @ 4.5V

30V

4.5V 11.5V

±20V

-

-

-

-

-

ROHS3 Compliant

I-PAK

-

-

-

-

-

-

-

-

-

NTD4855NT4G vs NTD4804N-1G
NTD4809N-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

-

-

-55°C~175°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

1.4W Ta 52W Tc

-

-

N-Channel

-

9mOhm @ 30A, 10V

2.5V @ 250μA

1.456pF @ 12V

9.6A Ta 58A Tc

13nC @ 4.5V

30V

4.5V 11.5V

±20V

-

-

-

-

-

ROHS3 Compliant

I-PAK

-

-

-

-

-

-

-

-

-

NTD4855NT4G vs NTD4809N-35G
NTD4863NA-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

NO

SILICON

-55°C~175°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

-

-

-

-

-

3

-

-

1

-

1.27W Ta 36.6W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

9.3m Ω @ 30A, 10V

2.5V @ 250μA

990pF @ 12V

9.2A Ta 49A Tc

17.8nC @ 10V

25V

-

-

9.2A

-

98A

25V

60.5 mJ

RoHS Compliant

-

LAST SHIPMENTS (Last Updated: 1 week ago)

3

2010

EAR99

Single

1.95W

11.3mA

20V

Lead Free

NTD4855NT4G vs NTD4863NA-35G