ON Semiconductor NTD4854N-1G

NTD4854N-1G Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 338 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4.6pF @ 12V maximal input capacitance.A device can conduct a maximum continuous current of [15.7A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 225A.The DS breakdown voltage should be maintained above 25V to maintain normal operation.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

NTD4854N-1G Features
the avalanche energy rating (Eas) is 338 mJ
based on its rated peak drain current 225A.
a 25V drain to source voltage (Vdss)


NTD4854N-1G Applications
There are a lot of Rochester Electronics, LLC
NTD4854N-1G applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies