ON Semiconductor NTD4815NHT4G

Name: NTD4815NHT4G
Brand: ON Semiconductor
SKU: 3071282-NTD4815NHT4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD4815NHT4G

Manufacturer:: ON Semiconductor

Ventron No:: 3071282-NTD4815NHT4G

Description:: MOSFET N-CH 30V 6.9A DPAK

ECAD Model:

Datasheet:: NTD4815NHT4G

Specifications

ON Semiconductor NTD4815NHT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4815NHT4G.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.26W Ta 32.6W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
15m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
845pF @ 12V
Current - Continuous Drain (Id) @ 25°C
6.9A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs
6.8nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 11.5V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
6.9A
Drain-source On Resistance-Max
0.015Ohm
Pulsed Drain Current-Max (IDM)
87A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
35.6 mJ
RoHS Status
ROHS3 Compliant

Description

NTD4815NHT4G Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 35.6 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 845pF @ 12V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 6.9A.Peak drain current is 87A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 11.5V), this device contributes to a reduction in overall power consumption.

NTD4815NHT4G Features
the avalanche energy rating (Eas) is 35.6 mJ
based on its rated peak drain current 87A.
a 30V drain to source voltage (Vdss)

NTD4815NHT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4815NHT4G applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

NTD4815NHT4G More Descriptions

Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK
Trans MOSFET N-CH 30V 8.5A 3-Pin (2 Tab) DPAK T/R - Tape and Reel
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 6.9A Ta 35A Tc 8.5A 1.92W 17.6ns
Power Field-Effect Transistor, 6.9A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to NTD4815NHT4G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Lifecycle Status

Factory Lead Time

Number of Pins

Published

ECCN Code

Subcategory

Element Configuration

Power Dissipation

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Radiation Hardening

Lead Free

View Compare
NTD4815NHT4G

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

1.26W Ta 32.6W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

15m Ω @ 30A, 10V

2.5V @ 250μA

845pF @ 12V

6.9A Ta 35A Tc

6.8nC @ 4.5V

30V

4.5V 11.5V

±20V

6.9A

0.015Ohm

87A

30V

35.6 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD4804N-1G

ON Semiconductor

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-55°C~175°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

1.43W Ta 107W Tc

-

-

N-Channel

-

4mOhm @ 30A, 10V

2.5V @ 250μA

4.49pF @ 12V

14.5A Ta 124A Tc

40nC @ 4.5V

30V

4.5V 11.5V

±20V

-

-

-

-

-

ROHS3 Compliant

I-PAK

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD4815NHT4G vs NTD4804N-1G
NTD4810N-1G

ON Semiconductor

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-55°C~175°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

1.4W Ta 50W Tc

-

-

N-Channel

-

10mOhm @ 30A, 10V

2.5V @ 250μA

1.35pF @ 12V

9A Ta 54A Tc

11nC @ 4.5V

30V

4.5V 11.5V

±20V

-

-

-

-

-

ROHS3 Compliant

I-PAK

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD4815NHT4G vs NTD4810N-1G
NTD4858N-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

NO

SILICON

-55°C~175°C TJ

Tube

e3

yes

Active

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

-

-

-

-

-

3

-

-

1

-

1.3W Ta 54.5W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

6.2m Ω @ 30A, 10V

2.5V @ 250μA

1563pF @ 12V

11.2A Ta 73A Tc

19.2nC @ 4.5V

-

4.5V 10V

±20V

-

-

-

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 1 day ago)

4 Weeks

3

2007

EAR99

FET General Purpose Power

Single

2W

17.3ns

2.8 ns

23.8 ns

13.6A

20V

25V

No

Lead Free

NTD4815NHT4G vs NTD4858N-35G

Certification

Related parts for NTD4815NHT4G

NTD4815NH-35G

ON Semiconductor

MOSFET N-CH 30V 6.9A IPAK
NTD4804N-1G

ON Semiconductor

MOSFET N-CH 30V 14.5A IPAK
NTD4810N-1G

ON Semiconductor

MOSFET N-CH 30V 8.6A IPAK
NTD4809N-35G

ON Semiconductor

MOSFET N-CH 30V 9A IPAK
NTD4906N-1G

ON Semiconductor

MOSFET N-CH 30V 54A SGL IPAK
NTD4863NA-35G

ON Semiconductor

MOSFET N-CH 25V 49A SGL IPAK
NTD4855N-35G

ON Semiconductor

MOSFET N-CH 25V 14A IPAK
NTD4302

ON Semiconductor

MOSFET N-CH 30V 8.4A DPAK
NTD4858N-35G

ON Semiconductor

MOSFET N-CH 25V 11.2A IPAK
NTD4959N-35G

ON Semiconductor

MOSFET N-CH 30V 9A IPAK

Popular Search Part Number Related Keywords Search Tags

NTD4815NHT4G Price
NTD4815NHT4G Picture
NTD4815NHT4G Buy
NTD4815NHT4G Distributor
NTD4815NHT4G Image
NTD4815NHT4G Inquiry
NTD4815NHT4G Manufacturer
NTD4815NHT4G Part
NTD4815NHT4G Description
NTD4815NHT4G Technical Data
NTD4815NHT4G Stock
NTD4815NHT4G Wholesales
NTD4815NHT4G PDF
NTD4815NHT4G Inventory
NTD4815NHT4G Supplier
NTD4815NHT4G Datasheet
NTD4815NHT4G Rfq
NTD4815NHT4G Specification

NTD4815~~(9)~~
NTD481~~(27)~~
NTD48~~(98)~~
NTD4~~(112)~~
NTD~~(98)~~

Part Number	Manufacturers	Description	Stock	Price
NTD4815NHT4G DISTI #NTD4815NHT4G	ON Semiconductor	MOSFET N-CH 30V 6.9A DPAK RoHS: Compliant	0
NTD4815NHT4G DISTI #NTD4815NHT4G	ON Semiconductor	MOSFET N-CH 30V 35A DPAK RoHS: Compliant	0
NTD4815NHT4G DISTI #NTD4815NHT4G	ON Semiconductor	MOSFET NFET DPAK 30V 40A 13MOHM RoHS: Compliant	0
NTD4815NHT4G DISTI #NTD4815NHT4G	ON Semiconductor	RoHS: Not Compliant	828021	1 $0.1 25 $0.09 100 $0.09 500 $0.08 1000 $0.08

ON Semiconductor NTD4815NHT4G

Quick Request Quote

MAX232IDR Characteristics, Specifications, Application Fields and Working Principle

4N35 Optocoupler: Pinout, Package, Application, and 4N25 vs 4N35

TPS3808G01DBVR: A Powerful Power Monitoring Reset Chip

TPS92662AQPHPRQ1 Alternatives, Characteristics, Functions and Other Details