ON Semiconductor NTD4815N-35G
- Part Number:
- NTD4815N-35G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2478866-NTD4815N-35G
- Description:
- MOSFET NCH 30V 6.9A IPAK TRIMMED
- Datasheet:
- NTD4815N-35G
ON Semiconductor NTD4815N-35G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4815N-35G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Stub Leads, IPak
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Current Rating35A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max1.26W Ta 32.6W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation32.6W
- Case ConnectionDRAIN
- Turn On Delay Time10.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs15m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds770pF @ 12V
- Current - Continuous Drain (Id) @ 25°C6.9A Ta 35A Tc
- Gate Charge (Qg) (Max) @ Vgs14.1nC @ 11.5V
- Rise Time21.4ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 11.5V
- Vgs (Max)±20V
- Fall Time (Typ)21.4 ns
- Turn-Off Delay Time11.4 ns
- Continuous Drain Current (ID)35A
- Threshold Voltage1.5V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)6.9A
- Drain-source On Resistance-Max0.025Ohm
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)87A
- Dual Supply Voltage30V
- Avalanche Energy Rating (Eas)60.5 mJ
- Nominal Vgs2.5 V
- Height2.38mm
- Length6.73mm
- Width7.49mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTD4815N-35G Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 60.5 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 770pF @ 12V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 35A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 6.9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 11.4 ns.Peak drain current is 87A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.5V, which means that it will not activate any of its functions when its threshold voltage reaches 1.5V.Using drive voltage (4.5V 11.5V), this device contributes to a reduction in overall power consumption.
NTD4815N-35G Features
the avalanche energy rating (Eas) is 60.5 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11.4 ns
based on its rated peak drain current 87A.
a threshold voltage of 1.5V
NTD4815N-35G Applications
There are a lot of ON Semiconductor
NTD4815N-35G applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 60.5 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 770pF @ 12V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 35A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 6.9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 11.4 ns.Peak drain current is 87A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.5V, which means that it will not activate any of its functions when its threshold voltage reaches 1.5V.Using drive voltage (4.5V 11.5V), this device contributes to a reduction in overall power consumption.
NTD4815N-35G Features
the avalanche energy rating (Eas) is 60.5 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11.4 ns
based on its rated peak drain current 87A.
a threshold voltage of 1.5V
NTD4815N-35G Applications
There are a lot of ON Semiconductor
NTD4815N-35G applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
NTD4815N-35G More Descriptions
NTD4815N-35G N-channel MOSFET Transistor; 35 A; 30 V; 3-Pin IPAK
Single N-Channel Power MOSFET 30V 35A 15mΩ
MOSFETs- Power and Small Signal NFET 30V 35A 15MOHM
MOSFET, N, 30V, 3 I-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 32.6W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 35A; Termination Type: Through Hole; Voltage Vds Typ: 30V; Voltage Vgs Max: 2.5V; Voltage Vgs Rds on Measurement: 10V
Single N-Channel Power MOSFET 30V 35A 15mΩ
MOSFETs- Power and Small Signal NFET 30V 35A 15MOHM
MOSFET, N, 30V, 3 I-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 32.6W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 35A; Termination Type: Through Hole; Voltage Vds Typ: 30V; Voltage Vgs Max: 2.5V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to NTD4815N-35G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeTerminal PositionJESD-30 CodeConfigurationDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinRadiation HardeningMountView Compare
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NTD4815N-35GACTIVE (Last Updated: 1 day ago)2 WeeksThrough HoleTO-251-3 Stub Leads, IPakNO3SILICON-55°C~175°C TJTube2008e3yesActive1 (Unlimited)3Through HoleEAR99Tin (Sn)FET General Purpose Power30VMOSFET (Metal Oxide)NOT SPECIFIEDnot_compliant35ANOT SPECIFIED3Not Qualified11.26W Ta 32.6W TcSingleENHANCEMENT MODE32.6WDRAIN10.5 nsN-ChannelSWITCHING15m Ω @ 30A, 10V2.5V @ 250μA770pF @ 12V6.9A Ta 35A Tc14.1nC @ 11.5V21.4ns4.5V 11.5V±20V21.4 ns11.4 ns35A1.5V20V6.9A0.025Ohm30V87A30V60.5 mJ2.5 V2.38mm6.73mm7.49mmNo SVHCROHS3 CompliantLead Free--------
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--Through HoleTO-251-3 Stub Leads, IPakNO-SILICON-55°C~175°C TJTube-e3yesObsolete1 (Unlimited)3--TIN--MOSFET (Metal Oxide)NOT SPECIFIED--NOT SPECIFIED3COMMERCIAL11.35W Ta 66.7W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING4.3m Ω @ 30A, 10V2.5V @ 250μA2.95pF @ 12V14A Ta 98A Tc32.7nC @ 4.5V-4.5V 10V±20V-----14A0.006Ohm-197A-220 mJ-----ROHS3 Compliant-SINGLER-PSIP-T3SINGLE WITH BUILT-IN DIODE25V25V--
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ACTIVE (Last Updated: 1 day ago)4 WeeksThrough HoleTO-251-3 Stub Leads, IPakNO3SILICON-55°C~175°C TJTube2007e3yesActive1 (Unlimited)3-EAR99Tin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)----3-11.3W Ta 54.5W TcSingleENHANCEMENT MODE2WDRAIN-N-ChannelSWITCHING6.2m Ω @ 30A, 10V2.5V @ 250μA1563pF @ 12V11.2A Ta 73A Tc19.2nC @ 4.5V17.3ns4.5V 10V±20V2.8 ns23.8 ns13.6A-20V--25V--------ROHS3 CompliantLead Free-----No-
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--Through HoleTO-251-3 Stub Leads, IPak-3--55°C~175°C TJTube2009--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)-------1.3W Ta 52W Tc-----N-Channel-9m Ω @ 30A, 10V2.5V @ 250μA1456pF @ 12V9A Ta 58A Tc25nC @ 11.5V-4.5V 11.5V±20V--58A-------------RoHS Compliant----30V--Through Hole
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