NTD4815N-35G

ON Semiconductor NTD4815N-35G

Part Number:
NTD4815N-35G
Manufacturer:
ON Semiconductor
Ventron No:
2478866-NTD4815N-35G
Description:
MOSFET NCH 30V 6.9A IPAK TRIMMED
ECAD Model:
Datasheet:
NTD4815N-35G

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Specifications
ON Semiconductor NTD4815N-35G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4815N-35G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Stub Leads, IPak
  • Surface Mount
    NO
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Current Rating
    35A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    1.26W Ta 32.6W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    32.6W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    10.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    15m Ω @ 30A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    770pF @ 12V
  • Current - Continuous Drain (Id) @ 25°C
    6.9A Ta 35A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    14.1nC @ 11.5V
  • Rise Time
    21.4ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 11.5V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    21.4 ns
  • Turn-Off Delay Time
    11.4 ns
  • Continuous Drain Current (ID)
    35A
  • Threshold Voltage
    1.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    6.9A
  • Drain-source On Resistance-Max
    0.025Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    87A
  • Dual Supply Voltage
    30V
  • Avalanche Energy Rating (Eas)
    60.5 mJ
  • Nominal Vgs
    2.5 V
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    7.49mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTD4815N-35G Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 60.5 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 770pF @ 12V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 35A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 6.9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 11.4 ns.Peak drain current is 87A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.5V, which means that it will not activate any of its functions when its threshold voltage reaches 1.5V.Using drive voltage (4.5V 11.5V), this device contributes to a reduction in overall power consumption.

NTD4815N-35G Features
the avalanche energy rating (Eas) is 60.5 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11.4 ns
based on its rated peak drain current 87A.
a threshold voltage of 1.5V


NTD4815N-35G Applications
There are a lot of ON Semiconductor
NTD4815N-35G applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
NTD4815N-35G More Descriptions
NTD4815N-35G N-channel MOSFET Transistor; 35 A; 30 V; 3-Pin IPAK
Single N-Channel Power MOSFET 30V 35A 15mΩ
MOSFETs- Power and Small Signal NFET 30V 35A 15MOHM
MOSFET, N, 30V, 3 I-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 32.6W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 35A; Termination Type: Through Hole; Voltage Vds Typ: 30V; Voltage Vgs Max: 2.5V; Voltage Vgs Rds on Measurement: 10V
Product Comparison
The three parts on the right have similar specifications to NTD4815N-35G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Terminal Position
    JESD-30 Code
    Configuration
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Radiation Hardening
    Mount
    View Compare
  • NTD4815N-35G
    NTD4815N-35G
    ACTIVE (Last Updated: 1 day ago)
    2 Weeks
    Through Hole
    TO-251-3 Stub Leads, IPak
    NO
    3
    SILICON
    -55°C~175°C TJ
    Tube
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    Through Hole
    EAR99
    Tin (Sn)
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    35A
    NOT SPECIFIED
    3
    Not Qualified
    1
    1.26W Ta 32.6W Tc
    Single
    ENHANCEMENT MODE
    32.6W
    DRAIN
    10.5 ns
    N-Channel
    SWITCHING
    15m Ω @ 30A, 10V
    2.5V @ 250μA
    770pF @ 12V
    6.9A Ta 35A Tc
    14.1nC @ 11.5V
    21.4ns
    4.5V 11.5V
    ±20V
    21.4 ns
    11.4 ns
    35A
    1.5V
    20V
    6.9A
    0.025Ohm
    30V
    87A
    30V
    60.5 mJ
    2.5 V
    2.38mm
    6.73mm
    7.49mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • NTD4855N-35G
    -
    -
    Through Hole
    TO-251-3 Stub Leads, IPak
    NO
    -
    SILICON
    -55°C~175°C TJ
    Tube
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    TIN
    -
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    -
    -
    NOT SPECIFIED
    3
    COMMERCIAL
    1
    1.35W Ta 66.7W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    4.3m Ω @ 30A, 10V
    2.5V @ 250μA
    2.95pF @ 12V
    14A Ta 98A Tc
    32.7nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    14A
    0.006Ohm
    -
    197A
    -
    220 mJ
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    SINGLE
    R-PSIP-T3
    SINGLE WITH BUILT-IN DIODE
    25V
    25V
    -
    -
  • NTD4858N-35G
    ACTIVE (Last Updated: 1 day ago)
    4 Weeks
    Through Hole
    TO-251-3 Stub Leads, IPak
    NO
    3
    SILICON
    -55°C~175°C TJ
    Tube
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3
    -
    1
    1.3W Ta 54.5W Tc
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    -
    N-Channel
    SWITCHING
    6.2m Ω @ 30A, 10V
    2.5V @ 250μA
    1563pF @ 12V
    11.2A Ta 73A Tc
    19.2nC @ 4.5V
    17.3ns
    4.5V 10V
    ±20V
    2.8 ns
    23.8 ns
    13.6A
    -
    20V
    -
    -
    25V
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    No
    -
  • NTD4959N-35G
    -
    -
    Through Hole
    TO-251-3 Stub Leads, IPak
    -
    3
    -
    -55°C~175°C TJ
    Tube
    2009
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    1.3W Ta 52W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    9m Ω @ 30A, 10V
    2.5V @ 250μA
    1456pF @ 12V
    9A Ta 58A Tc
    25nC @ 11.5V
    -
    4.5V 11.5V
    ±20V
    -
    -
    58A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    30V
    -
    -
    Through Hole
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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