ON Semiconductor NTD4815N-1G
- Part Number:
- NTD4815N-1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2489387-NTD4815N-1G
- Description:
- MOSFET N-CH 30V 6.9A IPAK
- ECAD Model:
-
- Datasheet:
- NTD4815N-1G
ON Semiconductor NTD4815N-1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4815N-1G.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Stub Leads, IPak
- Supplier Device PackageI-PAK
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max1.26W Ta 32.6W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs15mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds770pF @ 12V
- Current - Continuous Drain (Id) @ 25°C6.9A Ta 35A Tc
- Gate Charge (Qg) (Max) @ Vgs6.6nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 11.5V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
NTD4815N-1G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 770pF @ 12V.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 11.5V).
NTD4815N-1G Features
a 30V drain to source voltage (Vdss)
NTD4815N-1G Applications
There are a lot of Rochester Electronics, LLC
NTD4815N-1G applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 770pF @ 12V.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 11.5V).
NTD4815N-1G Features
a 30V drain to source voltage (Vdss)
NTD4815N-1G Applications
There are a lot of Rochester Electronics, LLC
NTD4815N-1G applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
NTD4815N-1G More Descriptions
Tube Through Hole N-Channel Single Mosfet Transistor 6.9A Ta 35A Tc 35A 1.92W 21.4ns
MOSFETs- Power and Small Signal NFET 30V 35A 15MOHM
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:32.6W ;RoHS Compliant: Yes
MOSFETs- Power and Small Signal NFET 30V 35A 15MOHM
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:32.6W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to NTD4815N-1G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusLifecycle StatusSurface MountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionTransistor ApplicationContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Lead FreeMountView Compare
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NTD4815N-1GThrough HoleTO-251-3 Stub Leads, IPakI-PAK-55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.26W Ta 32.6W TcN-Channel15mOhm @ 30A, 10V2.5V @ 250μA770pF @ 12V6.9A Ta 35A Tc6.6nC @ 4.5V30V4.5V 11.5V±20VROHS3 Compliant-------------------------- -
Through HoleTO-251-3 Short Leads, IPak, TO-251AAI-PAK-55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.4W Ta 50W TcN-Channel10mOhm @ 30A, 10V2.5V @ 250μA1.35pF @ 12V9A Ta 54A Tc11nC @ 4.5V30V4.5V 11.5V±20VROHS3 Compliant-------------------------
-
Through HoleTO-251-3 Stub Leads, IPak--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.27W Ta 36.6W TcN-Channel9.3m Ω @ 30A, 10V2.5V @ 250μA990pF @ 12V9.2A Ta 49A Tc17.8nC @ 10V25V--RoHS CompliantLAST SHIPMENTS (Last Updated: 1 week ago)NO3SILICON2010e3yes3EAR99Tin (Sn)31SingleENHANCEMENT MODE1.95WDRAINSWITCHING11.3mA20V9.2A98A25V60.5 mJLead Free-
-
Through HoleTO-251-3 Stub Leads, IPak--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.3W Ta 52W TcN-Channel9m Ω @ 30A, 10V2.5V @ 250μA1456pF @ 12V9A Ta 58A Tc25nC @ 11.5V30V4.5V 11.5V±20VRoHS Compliant--3-2009------------58A------Through Hole
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