ON Semiconductor NTD4813N-1G
- Part Number:
- NTD4813N-1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2490276-NTD4813N-1G
- Description:
- MOSFET N-CH 30V 7.6A IPAK
- Datasheet:
- NTD4813N-1G
ON Semiconductor NTD4813N-1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4813N-1G.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSIP-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1.27W Ta 35.3W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs13m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds860pF @ 12V
- Current - Continuous Drain (Id) @ 25°C7.6A Ta 40A Tc
- Gate Charge (Qg) (Max) @ Vgs7.9nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 11.5V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)7.6A
- Drain-source On Resistance-Max0.024Ohm
- Pulsed Drain Current-Max (IDM)90A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)72 mJ
- RoHS StatusROHS3 Compliant
NTD4813N-1G Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 72 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 860pF @ 12V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 7.6A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 90A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 11.5V), this device helps reduce its overall power consumption.
NTD4813N-1G Features
the avalanche energy rating (Eas) is 72 mJ
based on its rated peak drain current 90A.
a 30V drain to source voltage (Vdss)
NTD4813N-1G Applications
There are a lot of Rochester Electronics, LLC
NTD4813N-1G applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 72 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 860pF @ 12V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 7.6A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 90A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 11.5V), this device helps reduce its overall power consumption.
NTD4813N-1G Features
the avalanche energy rating (Eas) is 72 mJ
based on its rated peak drain current 90A.
a 30V drain to source voltage (Vdss)
NTD4813N-1G Applications
There are a lot of Rochester Electronics, LLC
NTD4813N-1G applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
NTD4813N-1G More Descriptions
Tube Through Hole N-Channel Single Mosfet Transistor 7.6A Ta 40A Tc 40A 1.94W 19.3ns
Power MOSFET 30V 40A 13 mOhm Single N-Channel DPAK
MOSFETs- Power and Small Signal NFET 30V 40A 13MOHM
Power MOSFET 30V 40A 13 mOhm Single N-Channel DPAK
MOSFETs- Power and Small Signal NFET 30V 40A 13MOHM
The three parts on the right have similar specifications to NTD4813N-1G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSupplier Device PackageMountNumber of PinsPublishedContinuous Drain Current (ID)View Compare
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NTD4813N-1GThrough HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON-55°C~175°C TJTubee3yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE1.27W Ta 35.3W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING13m Ω @ 30A, 10V2.5V @ 250μA860pF @ 12V7.6A Ta 40A Tc7.9nC @ 4.5V30V4.5V 11.5V±20V7.6A0.024Ohm90A30V72 mJROHS3 Compliant------
-
Through HoleTO-251-3 Stub Leads, IPak---55°C~175°C TJTube--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--------1.4W Ta 52W Tc--N-Channel-9mOhm @ 30A, 10V2.5V @ 250μA1.456pF @ 12V9.6A Ta 58A Tc13nC @ 4.5V30V4.5V 11.5V±20V-----ROHS3 CompliantI-PAK----
-
Through HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON-55°C~175°C TJTubee3yesObsolete1 (Unlimited)3MATTE TINMOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE1.38W Ta 37.5W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING5.5m Ω @ 30A, 10V2.2V @ 250μA1.932pF @ 15V10.3A Ta 54A Tc24nC @ 10V30V4.5V 10V±20V14A0.008Ohm223A30V48 mJROHS3 Compliant-----
-
Through HoleTO-251-3 Stub Leads, IPak---55°C~175°C TJTube--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--------1.3W Ta 52W Tc--N-Channel-9m Ω @ 30A, 10V2.5V @ 250μA1456pF @ 12V9A Ta 58A Tc25nC @ 11.5V30V4.5V 11.5V±20V-----RoHS Compliant-Through Hole3200958A
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