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NTD4809NT4G

ON Semiconductor NTD4809NT4G

Part Number:
NTD4809NT4G
Manufacturer:
ON Semiconductor
Ventron No:
2479260-NTD4809NT4G
Description:
MOSFET N-CH 30V 9.6A DPAK
ECAD Model:
Datasheet:
N(T,V)D4809N

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Specifications
ON Semiconductor NTD4809NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4809NT4G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    9MOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    1.4W Ta 52W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    12.3 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    9m Ω @ 30A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1456pF @ 12V
  • Current - Continuous Drain (Id) @ 25°C
    9.6A Ta 58A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 11.5V
  • Rise Time
    22.7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 11.5V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    2.8 ns
  • Turn-Off Delay Time
    25.3 ns
  • Continuous Drain Current (ID)
    58A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    9A
  • Drain to Source Breakdown Voltage
    30V
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTD4809NT4G Description
The ON Semiconductor NTD4809NT4G  is a Single N-Channel Power MOSFET 30 V, 58 A, Single N-Channel with DPAK package.

NTD4809NT4G Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
RoHS Compliant

NTD4809NT4G Applications
CPU Power Delivery
DC-DC Converters
Low Side Switching
NTD4809NT4G More Descriptions
NTD4809NT4G N-channel MOSFET Transistor; 58 A; 30 V; 3-Pin DPAK
Single N-Channel Power MOSFET 30V 58A 9mΩ
Mosfet, N-Ch, 30V, 58A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.007Ohm; Rds(On) Test Voltage Vgs:11.5V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes |Onsemi NTD4809NT4G.
Product Comparison
The three parts on the right have similar specifications to NTD4809NT4G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Terminal Finish
    Terminal Position
    Qualification Status
    Configuration
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Additional Feature
    Voltage - Rated DC
    Reach Compliance Code
    Current Rating
    View Compare
  • NTD4809NT4G
    NTD4809NT4G
    ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    4 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    4
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    9MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    40
    4
    R-PSSO-G2
    1
    1.4W Ta 52W Tc
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    12.3 ns
    N-Channel
    SWITCHING
    9m Ω @ 30A, 10V
    2.5V @ 250μA
    1456pF @ 12V
    9.6A Ta 58A Tc
    25nC @ 11.5V
    22.7ns
    4.5V 11.5V
    ±20V
    2.8 ns
    25.3 ns
    58A
    20V
    9A
    30V
    2.38mm
    6.73mm
    6.22mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTD4810N-1G
    NTD4810N-1G
    ON Semiconductor
    -
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -
    -55°C~175°C TJ
    Tube
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1.4W Ta 50W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    10mOhm @ 30A, 10V
    2.5V @ 250μA
    1.35pF @ 12V
    9A Ta 54A Tc
    11nC @ 4.5V
    -
    4.5V 11.5V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    I-PAK
    30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NTD4809NT4G vs NTD4810N-1G
  • NTD4906N-1G
    NTD4906N-1G
    ON Semiconductor
    -
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    NO
    -
    SILICON
    -55°C~175°C TJ
    Tube
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    R-PSIP-T3
    1
    1.38W Ta 37.5W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    5.5m Ω @ 30A, 10V
    2.2V @ 250μA
    1.932pF @ 15V
    10.3A Ta 54A Tc
    24nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    14A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    30V
    MATTE TIN
    SINGLE
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    0.008Ohm
    223A
    30V
    48 mJ
    -
    -
    -
    -
    NTD4809NT4G vs NTD4906N-1G
  • NTD4302
    NTD4302
    ON Semiconductor
    OBSOLETE (Last Updated: 1 week ago)
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    4
    SILICON
    -55°C~150°C TJ
    Tube
    2005
    e0
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    235
    NOT SPECIFIED
    4
    R-PSSO-G2
    1
    1.04W Ta 75W Tc
    Single
    ENHANCEMENT MODE
    75W
    DRAIN
    -
    N-Channel
    SWITCHING
    10m Ω @ 20A, 10V
    3V @ 250μA
    2400pF @ 24V
    8.4A Ta 68A Tc
    80nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    40 ns
    68A
    20V
    -
    30V
    -
    -
    -
    -
    Non-RoHS Compliant
    Lead Free
    -
    -
    Tin/Lead (Sn80Pb20)
    -
    Not Qualified
    -
    0.01Ohm
    28A
    -
    722 mJ
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    30V
    not_compliant
    68A
    NTD4809NT4G vs NTD4302
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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