ON Semiconductor NTD4809NAT4G
- Part Number:
- NTD4809NAT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3813729-NTD4809NAT4G
- Description:
- MOSFET N-CH 30V 9A DPAK
- Datasheet:
- NTD4809NA
ON Semiconductor NTD4809NAT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4809NAT4G.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageDPAK
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max1.3W Ta 52W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.456pF @ 12V
- Current - Continuous Drain (Id) @ 25°C9.6A Ta 58A Tc
- Gate Charge (Qg) (Max) @ Vgs13nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 11.5V
- Vgs (Max)±20V
- RoHS StatusNon-RoHS Compliant
NTD4809NAT4G Overview
A device's maximum input capacitance is 1.456pF @ 12V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 11.5V) to reduce its overall power consumption.
NTD4809NAT4G Features
a 30V drain to source voltage (Vdss)
NTD4809NAT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4809NAT4G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 1.456pF @ 12V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 11.5V) to reduce its overall power consumption.
NTD4809NAT4G Features
a 30V drain to source voltage (Vdss)
NTD4809NAT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4809NAT4G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
NTD4809NAT4G More Descriptions
Trans MOSFET N-CH 25V 11.5A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Tape & Reel (TR) Surface Mount N-Channel MOSFET (Metal Oxide) Mosfet Transistor 9.6A Ta 58A Tc 11.5A 1.3W 30V
NTD4809NA - MOSFET N-CH 30V 9A DPAK;
Tape & Reel (TR) Surface Mount N-Channel MOSFET (Metal Oxide) Mosfet Transistor 9.6A Ta 58A Tc 11.5A 1.3W 30V
NTD4809NA - MOSFET N-CH 30V 9A DPAK;
The three parts on the right have similar specifications to NTD4809NAT4G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Lifecycle StatusFactory Lead TimeNumber of PinsPublishedECCN CodeSubcategoryElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRadiation HardeningLead FreeView Compare
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NTD4809NAT4GSurface MountTO-252-3, DPak (2 Leads Tab), SC-63DPAK-55°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)1.3W Ta 52W TcN-Channel9mOhm @ 30A, 10V2.5V @ 250μA1.456pF @ 12V9.6A Ta 58A Tc13nC @ 4.5V30V4.5V 11.5V±20VNon-RoHS Compliant---------------------------------------
-
Through HoleTO-251-3 Stub Leads, IPakI-PAK-55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.4W Ta 52W TcN-Channel9mOhm @ 30A, 10V2.5V @ 250μA1.456pF @ 12V9.6A Ta 58A Tc13nC @ 4.5V30V4.5V 11.5V±20VROHS3 Compliant--------------------------------------
-
Through HoleTO-251-3 Stub Leads, IPak--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.35W Ta 66.7W TcN-Channel4.3m Ω @ 30A, 10V2.5V @ 250μA2.95pF @ 12V14A Ta 98A Tc32.7nC @ 4.5V25V4.5V 10V±20VROHS3 CompliantNOSILICONe3yes3TINSINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING14A0.006Ohm197A25V220 mJ----------------
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Through HoleTO-251-3 Stub Leads, IPak--55°C~175°C TJTubeActive1 (Unlimited)MOSFET (Metal Oxide)1.3W Ta 54.5W TcN-Channel6.2m Ω @ 30A, 10V2.5V @ 250μA1563pF @ 12V11.2A Ta 73A Tc19.2nC @ 4.5V-4.5V 10V±20VROHS3 CompliantNOSILICONe3yes3Tin (Sn)---3--1-ENHANCEMENT MODEDRAINSWITCHING-----ACTIVE (Last Updated: 1 day ago)4 Weeks32007EAR99FET General Purpose PowerSingle2W17.3ns2.8 ns23.8 ns13.6A20V25VNoLead Free
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