ON Semiconductor NTD4809NA-35G

Name: NTD4809NA-35G
Brand: ON Semiconductor
SKU: 3813863-NTD4809NA-35G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD4809NA-35G

Manufacturer:: ON Semiconductor

Ventron No:: 3813863-NTD4809NA-35G

Description:: MOSFET N-CH 30V 9A IPAK

ECAD Model:

Datasheet:: NTD4809NA

Specifications

ON Semiconductor NTD4809NA-35G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4809NA-35G.

Mounting Type
Through Hole
Package / Case
TO-251-3 Stub Leads, IPak
Supplier Device Package
I-PAK
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
1.3W Ta 52W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.456pF @ 12V
Current - Continuous Drain (Id) @ 25°C
9.6A Ta 58A Tc
Gate Charge (Qg) (Max) @ Vgs
13nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 11.5V
Vgs (Max)
±20V
RoHS Status
Non-RoHS Compliant

Description

NTD4809NA-35G Overview
A device's maximum input capacitance is 1.456pF @ 12V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 11.5V) to reduce its overall power consumption.

NTD4809NA-35G Features
a 30V drain to source voltage (Vdss)

NTD4809NA-35G Applications
There are a lot of Rochester Electronics, LLC
NTD4809NA-35G applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

NTD4809NA-35G More Descriptions

Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 9.6A Ta 58A Tc 11.5A 2W 30V
MOSFETs- Power and Small Signal NFET 30V 58A 9MOHM
Trans MOSFET N-CH 25V 11.5A 3-Pin(3 Tab) IPAK Rail
NTD4809NA - MOSFET N-CH 30V 9A IPAK;
RES SMD 5.11K OHM 1% 1/4W 1206

Product Comparison

The three parts on the right have similar specifications to NTD4809NA-35G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Lifecycle Status

Surface Mount

Number of Pins

Transistor Element Material

Published

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Pin Count

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Transistor Application

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Lead Free

Additional Feature

Subcategory

Voltage - Rated DC

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Turn-Off Delay Time

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Factory Lead Time

Rise Time

Fall Time (Typ)

Radiation Hardening

View Compare
NTD4809NA-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

I-PAK

-55°C~175°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.3W Ta 52W Tc

N-Channel

9mOhm @ 30A, 10V

2.5V @ 250μA

1.456pF @ 12V

9.6A Ta 58A Tc

13nC @ 4.5V

30V

4.5V 11.5V

±20V

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD4863NA-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

-

-55°C~175°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.27W Ta 36.6W Tc

N-Channel

9.3m Ω @ 30A, 10V

2.5V @ 250μA

990pF @ 12V

9.2A Ta 49A Tc

17.8nC @ 10V

25V

-

-

RoHS Compliant

LAST SHIPMENTS (Last Updated: 1 week ago)

NO

3

SILICON

2010

e3

yes

3

EAR99

Tin (Sn)

3

1

Single

ENHANCEMENT MODE

1.95W

DRAIN

SWITCHING

11.3mA

20V

9.2A

98A

25V

60.5 mJ

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD4809NA-35G vs NTD4863NA-35G
NTD4302

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.04W Ta 75W Tc

N-Channel

10m Ω @ 20A, 10V

3V @ 250μA

2400pF @ 24V

8.4A Ta 68A Tc

80nC @ 10V

-

4.5V 10V

±20V

Non-RoHS Compliant

OBSOLETE (Last Updated: 1 week ago)

YES

4

SILICON

2005

e0

yes

2

EAR99

Tin/Lead (Sn80Pb20)

4

1

Single

ENHANCEMENT MODE

75W

DRAIN

SWITCHING

68A

20V

-

28A

-

722 mJ

Lead Free

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

GULL WING

235

not_compliant

68A

NOT SPECIFIED

R-PSSO-G2

Not Qualified

40 ns

0.01Ohm

30V

-

-

-

-

NTD4809NA-35G vs NTD4302
NTD4858N-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

-

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

MOSFET (Metal Oxide)

1.3W Ta 54.5W Tc

N-Channel

6.2m Ω @ 30A, 10V

2.5V @ 250μA

1563pF @ 12V

11.2A Ta 73A Tc

19.2nC @ 4.5V

-

4.5V 10V

±20V

ROHS3 Compliant

ACTIVE (Last Updated: 1 day ago)

NO

3

SILICON

2007

e3

yes

3

EAR99

Tin (Sn)

3

1

Single

ENHANCEMENT MODE

2W

DRAIN

SWITCHING

13.6A

20V

-

-

-

-

Lead Free

-

FET General Purpose Power

-

-

-

-

-

-

-

-

23.8 ns

-

25V

4 Weeks

17.3ns

2.8 ns

No

NTD4809NA-35G vs NTD4858N-35G