ON Semiconductor NTD4806NT4G
- Part Number:
- NTD4806NT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2490471-NTD4806NT4G
- Description:
- MOSFET N-CH 30V 11.3A DPAK
- ECAD Model:
-
- Datasheet:
- NTD4806NT4G
ON Semiconductor NTD4806NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4806NT4G.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageDPAK
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max1.4W Ta 68W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2.142pF @ 12V
- Current - Continuous Drain (Id) @ 25°C11.3A Ta 79A Tc
- Gate Charge (Qg) (Max) @ Vgs23nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 11.5V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
NTD4806NT4G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.142pF @ 12V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 11.5V), this device helps reduce its overall power consumption.
NTD4806NT4G Features
a 30V drain to source voltage (Vdss)
NTD4806NT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4806NT4G applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.142pF @ 12V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 11.5V), this device helps reduce its overall power consumption.
NTD4806NT4G Features
a 30V drain to source voltage (Vdss)
NTD4806NT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4806NT4G applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
NTD4806NT4G More Descriptions
NTD4806NT4G N-channel MOSFET Transistor, 76 A, 30 V, 3-Pin DPAK | ON Semiconductor NTD4806NT4G
Power MOSFET 30V 76A 6 mOhm Single N-Channel DPAK
Trans MOSFET N-CH 30V 15.6A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 30V 11.3A DPAK
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:14A; On Resistance, Rds(on):4.9mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes
Power MOSFET 30V 76A 6 mOhm Single N-Channel DPAK
Trans MOSFET N-CH 30V 15.6A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 30V 11.3A DPAK
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:14A; On Resistance, Rds(on):4.9mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to NTD4806NT4G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)MountNumber of PinsPublishedContinuous Drain Current (ID)View Compare
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NTD4806NT4GSurface MountTO-252-3, DPak (2 Leads Tab), SC-63DPAK-55°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)1.4W Ta 68W TcN-Channel6mOhm @ 30A, 10V2.5V @ 250μA2.142pF @ 12V11.3A Ta 79A Tc23nC @ 4.5V30V4.5V 11.5V±20VROHS3 Compliant--------------------------- -
Through HoleTO-251-3 Stub Leads, IPakI-PAK-55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.4W Ta 52W TcN-Channel9mOhm @ 30A, 10V2.5V @ 250μA1.456pF @ 12V9.6A Ta 58A Tc13nC @ 4.5V30V4.5V 11.5V±20VROHS3 Compliant--------------------------
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Through HoleTO-251-3 Stub Leads, IPak--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.35W Ta 66.7W TcN-Channel4.3m Ω @ 30A, 10V2.5V @ 250μA2.95pF @ 12V14A Ta 98A Tc32.7nC @ 4.5V25V4.5V 10V±20VROHS3 CompliantNOSILICONe3yes3TINSINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING14A0.006Ohm197A25V220 mJ----
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Through HoleTO-251-3 Stub Leads, IPak--55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.3W Ta 52W TcN-Channel9m Ω @ 30A, 10V2.5V @ 250μA1456pF @ 12V9A Ta 58A Tc25nC @ 11.5V30V4.5V 11.5V±20VRoHS Compliant----------------------Through Hole3200958A
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