ON Semiconductor NTD4806NA-1G
- Part Number:
- NTD4806NA-1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3813740-NTD4806NA-1G
- Description:
- MOSFET N-CH 30V 11A IPAK
- Datasheet:
- NTD4806NA-1G
ON Semiconductor NTD4806NA-1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4806NA-1G.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Stub Leads, IPak
- Supplier Device PackageI-PAK
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2.142pF @ 12V
- Current - Continuous Drain (Id) @ 25°C11.3A Ta 79A Tc
- Gate Charge (Qg) (Max) @ Vgs23nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- RoHS StatusNon-RoHS Compliant
NTD4806NA-1G Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2.142pF @ 12V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.
NTD4806NA-1G Features
a 30V drain to source voltage (Vdss)
NTD4806NA-1G Applications
There are a lot of Rochester Electronics, LLC
NTD4806NA-1G applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2.142pF @ 12V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.
NTD4806NA-1G Features
a 30V drain to source voltage (Vdss)
NTD4806NA-1G Applications
There are a lot of Rochester Electronics, LLC
NTD4806NA-1G applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
NTD4806NA-1G More Descriptions
Tube Through Hole N-Channel Single Mosfet Transistor 11.3A Ta 79A Tc 14A 2.14W 4.7ns
MOSFETs- Power and Small Signal NFET 30V 76A 6MO
Trans MOSFET N-CH 30V 14A 3-Pin(3 Tab) IPAK Rail
Compliant Through Hole 4.7 ns 23.8 ns 6 mΩ TO-251-3 3 2.142 nF
MOSFET N-CH 30V 11.3A/79A IPAK
MOSFETs- Power and Small Signal NFET 30V 76A 6MO
Trans MOSFET N-CH 30V 14A 3-Pin(3 Tab) IPAK Rail
Compliant Through Hole 4.7 ns 23.8 ns 6 mΩ TO-251-3 3 2.142 nF
MOSFET N-CH 30V 11.3A/79A IPAK
The three parts on the right have similar specifications to NTD4806NA-1G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackagePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)RoHS StatusSurface MountTransistor Element MaterialOperating TemperatureJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionTransistor ApplicationDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Lifecycle StatusNumber of PinsPublishedECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCTerminal FormReach Compliance CodeCurrent RatingElement ConfigurationPower DissipationTurn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageLead FreeMountView Compare
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NTD4806NA-1GThrough HoleTO-251-3 Stub Leads, IPakI-PAKTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)N-Channel6mOhm @ 30A, 10V2.5V @ 250μA2.142pF @ 12V11.3A Ta 79A Tc23nC @ 4.5V30VNon-RoHS Compliant---------------------------------------------
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Through HoleTO-251-3 Stub Leads, IPak-TubeObsolete1 (Unlimited)MOSFET (Metal Oxide)N-Channel4.3m Ω @ 30A, 10V2.5V @ 250μA2.95pF @ 12V14A Ta 98A Tc32.7nC @ 4.5V25VROHS3 CompliantNOSILICON-55°C~175°C TJe3yes3TINSINGLENOT SPECIFIEDNOT SPECIFIED3R-PSIP-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE1.35W Ta 66.7W TcENHANCEMENT MODEDRAINSWITCHING4.5V 10V±20V14A0.006Ohm197A25V220 mJ------------------
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-TubeObsolete1 (Unlimited)MOSFET (Metal Oxide)N-Channel10m Ω @ 20A, 10V3V @ 250μA2400pF @ 24V8.4A Ta 68A Tc80nC @ 10V-Non-RoHS CompliantYESSILICON-55°C~150°C TJe0yes2Tin/Lead (Sn80Pb20)-235NOT SPECIFIED4R-PSSO-G2Not Qualified1-1.04W Ta 75W TcENHANCEMENT MODEDRAINSWITCHING4.5V 10V±20V-0.01Ohm28A-722 mJOBSOLETE (Last Updated: 1 week ago)42005EAR99AVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose Power30VGULL WINGnot_compliant68ASingle75W40 ns68A20V30VLead Free-
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Through HoleTO-251-3 Stub Leads, IPak-TubeObsolete1 (Unlimited)MOSFET (Metal Oxide)N-Channel9m Ω @ 30A, 10V2.5V @ 250μA1456pF @ 12V9A Ta 58A Tc25nC @ 11.5V30VRoHS Compliant---55°C~175°C TJ------------1.3W Ta 52W Tc---4.5V 11.5V±20V------32009----------58A---Through Hole
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