ON Semiconductor NTD4805NT4G
- Part Number:
- NTD4805NT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2485343-NTD4805NT4G
- Description:
- MOSFET N-CH 30V 12.7A DPAK
- Datasheet:
- NTD4805NT4G
ON Semiconductor NTD4805NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4805NT4G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time9 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance5MOhm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max1.41W Ta 79W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.24W
- Case ConnectionDRAIN
- Turn On Delay Time17.2 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2865pF @ 12V
- Current - Continuous Drain (Id) @ 25°C12.7A Ta 95A Tc
- Gate Charge (Qg) (Max) @ Vgs48nC @ 11.5V
- Rise Time20.3ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 11.5V
- Vgs (Max)±20V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time20.8 ns
- Continuous Drain Current (ID)88A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)95A
- Drain to Source Breakdown Voltage30V
- Avalanche Energy Rating (Eas)288 mJ
- Height2.38mm
- Length6.73mm
- Width6.22mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTD4805NT4G Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 288 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2865pF @ 12V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 88A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.A device can conduct a maximum continuous current of [95A] according to its drain current.It is [20.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 17.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 11.5V).
NTD4805NT4G Features
the avalanche energy rating (Eas) is 288 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 20.8 ns
NTD4805NT4G Applications
There are a lot of ON Semiconductor
NTD4805NT4G applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 288 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2865pF @ 12V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 88A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.A device can conduct a maximum continuous current of [95A] according to its drain current.It is [20.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 17.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 11.5V).
NTD4805NT4G Features
the avalanche energy rating (Eas) is 288 mJ
a continuous drain current (ID) of 88A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 20.8 ns
NTD4805NT4G Applications
There are a lot of ON Semiconductor
NTD4805NT4G applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
NTD4805NT4G More Descriptions
NTD4805NT4G N-channel MOSFET Transistor; 95 A; 30 V; 3-Pin DPAK
Single N-Channel Power MOSFET 30V, 88A, 5mΩ
N-Channel 30 V 26 mOhm 2.24 W Tab Mount Power MOSFET - TO-252-3
MOSFETs- Power and Small Signal NFET 30V 88A 5MOHM
MOSFET, N-CH, 30V, 95A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 95A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 11.5V; Threshold Voltage Vgs: 2.5V; P
N Channel Mosfet, 30V, 16A, D-Pak; Continuous Drain Current Id:88A; Drain Source Voltage Vds:30V; Filter Terminals:Surface Mount; No. Of Pins:3; On Resistance Rds(On):4.3Mohm; Operating Temperature Max:175°C; Package/Case:3-Dpak Rohs Compliant: Yes |Onsemi NTD4805NT4G
Single N-Channel Power MOSFET 30V, 88A, 5mΩ
N-Channel 30 V 26 mOhm 2.24 W Tab Mount Power MOSFET - TO-252-3
MOSFETs- Power and Small Signal NFET 30V 88A 5MOHM
MOSFET, N-CH, 30V, 95A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 95A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 11.5V; Threshold Voltage Vgs: 2.5V; P
N Channel Mosfet, 30V, 16A, D-Pak; Continuous Drain Current Id:88A; Drain Source Voltage Vds:30V; Filter Terminals:Surface Mount; No. Of Pins:3; On Resistance Rds(On):4.3Mohm; Operating Temperature Max:175°C; Package/Case:3-Dpak Rohs Compliant: Yes |Onsemi NTD4805NT4G
The three parts on the right have similar specifications to NTD4805NT4G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal FormPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusConfigurationDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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NTD4805NT4GACTIVE (Last Updated: 3 days ago)9 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES4SILICON-55°C~175°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)2EAR995MOhmTin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)GULL WING4R-PSSO-G211.41W Ta 79W TcSingleENHANCEMENT MODE2.24WDRAIN17.2 nsN-ChannelSWITCHING5m Ω @ 30A, 10V2.5V @ 250μA2865pF @ 12V12.7A Ta 95A Tc48nC @ 11.5V20.3ns4.5V 11.5V±20V8 ns20.8 ns88A20V95A30V288 mJ2.38mm6.73mm6.22mmNoROHS3 CompliantLead Free----------
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--Through HoleTO-251-3 Short Leads, IPak, TO-251AANO-SILICON-55°C~175°C TJTube-e3yesObsolete1 (Unlimited)3--MATTE TIN-MOSFET (Metal Oxide)-3R-PSIP-T311.38W Ta 37.5W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING5.5m Ω @ 30A, 10V2.2V @ 250μA1.932pF @ 15V10.3A Ta 54A Tc24nC @ 10V-4.5V 10V±20V----14A-48 mJ----ROHS3 Compliant-SINGLENOT SPECIFIEDNOT SPECIFIEDCOMMERCIALSINGLE WITH BUILT-IN DIODE30V0.008Ohm223A30V
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LAST SHIPMENTS (Last Updated: 1 week ago)-Through HoleTO-251-3 Stub Leads, IPakNO3SILICON-55°C~175°C TJTube2010e3yesObsolete1 (Unlimited)3EAR99-Tin (Sn)-MOSFET (Metal Oxide)-3-11.27W Ta 36.6W TcSingleENHANCEMENT MODE1.95WDRAIN-N-ChannelSWITCHING9.3m Ω @ 30A, 10V2.5V @ 250μA990pF @ 12V9.2A Ta 49A Tc17.8nC @ 10V-----11.3mA20V9.2A-60.5 mJ----RoHS CompliantLead Free-----25V-98A25V
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--Through HoleTO-251-3 Stub Leads, IPakNO-SILICON-55°C~175°C TJTube-e3yesObsolete1 (Unlimited)3--TIN-MOSFET (Metal Oxide)-3R-PSIP-T311.35W Ta 66.7W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING4.3m Ω @ 30A, 10V2.5V @ 250μA2.95pF @ 12V14A Ta 98A Tc32.7nC @ 4.5V-4.5V 10V±20V----14A-220 mJ----ROHS3 Compliant-SINGLENOT SPECIFIEDNOT SPECIFIEDCOMMERCIALSINGLE WITH BUILT-IN DIODE25V0.006Ohm197A25V
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