ON Semiconductor NTD4804NT4G

Name: NTD4804NT4G
Brand: ON Semiconductor
SKU: 2481433-NTD4804NT4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD4804NT4G

Manufacturer:: ON Semiconductor

Ventron No:: 2481433-NTD4804NT4G

Description:: MOSFET N-CH 30V 14.5A DPAK

ECAD Model:

Datasheet:: NTD4804NT4G

Specifications

ON Semiconductor NTD4804NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4804NT4G.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
17 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
4MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
1.43W Ta 107W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
Turn On Delay Time
18 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4490pF @ 12V
Current - Continuous Drain (Id) @ 25°C
14.5A Ta 124A Tc
Gate Charge (Qg) (Max) @ Vgs
40nC @ 4.5V
Rise Time
19ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 11.5V
Vgs (Max)
±20V
Fall Time (Typ)
5 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
117A
Threshold Voltage
2.5V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
230A
Height
2.38mm
Length
6.73mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NTD4804NT4G Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4490pF @ 12V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 117A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 35 ns.Peak drain current for this device is 230A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.2.5V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (4.5V 11.5V) reduces this device's overall power consumption.

NTD4804NT4G Features
a continuous drain current (ID) of 117A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 230A.
a threshold voltage of 2.5V

NTD4804NT4G Applications
There are a lot of ON Semiconductor
NTD4804NT4G applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

NTD4804NT4G More Descriptions

IC; Transistor; Mosfet; N-Channel; 30V; 14.5A; DPAK-3; Cut Tape
N-Channel 30 V 4 mOhm 1.43 W Surface Mount Power Mosfet - TO-252-3
Single N-Channel Power MOSFET 30V, 117A, 4mΩ
MOSFETs- Power and Small Signal NFET 30V 117A 4MOHM
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:19.6A; On Resistance Rds(On):0.0034Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to NTD4804NT4G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Configuration

Drain-source On Resistance-Max

Additional Feature

Voltage - Rated DC

Reach Compliance Code

Current Rating

View Compare
NTD4804NT4G

ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

17 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

4

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

2

EAR99

4MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

4

R-PSSO-G2

1

1.43W Ta 107W Tc

Single

ENHANCEMENT MODE

2.5W

DRAIN

18 ns

N-Channel

SWITCHING

4m Ω @ 30A, 10V

2.5V @ 250μA

4490pF @ 12V

14.5A Ta 124A Tc

40nC @ 4.5V

19ns

4.5V 11.5V

±20V

5 ns

35 ns

117A

2.5V

20V

30V

230A

2.38mm

6.73mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD4863NA-35G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

-

Through Hole

TO-251-3 Stub Leads, IPak

NO

3

SILICON

-55°C~175°C TJ

Tube

2010

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

-

-

MOSFET (Metal Oxide)

-

3

-

1

1.27W Ta 36.6W Tc

Single

ENHANCEMENT MODE

1.95W

DRAIN

-

N-Channel

SWITCHING

9.3m Ω @ 30A, 10V

2.5V @ 250μA

990pF @ 12V

9.2A Ta 49A Tc

17.8nC @ 10V

-

-

-

-

-

11.3mA

-

20V

-

98A

-

-

-

-

-

RoHS Compliant

Lead Free

Tin (Sn)

25V

9.2A

25V

60.5 mJ

-

-

-

-

-

-

-

-

-

-

NTD4804NT4G vs NTD4863NA-35G
NTD4855N-35G

ON Semiconductor

-

-

-

Through Hole

TO-251-3 Stub Leads, IPak

NO

-

SILICON

-55°C~175°C TJ

Tube

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

-

MOSFET (Metal Oxide)

-

3

R-PSIP-T3

1

1.35W Ta 66.7W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

4.3m Ω @ 30A, 10V

2.5V @ 250μA

2.95pF @ 12V

14A Ta 98A Tc

32.7nC @ 4.5V

-

4.5V 10V

±20V

-

-

-

-

-

-

197A

-

-

-

-

-

ROHS3 Compliant

-

TIN

25V

14A

25V

220 mJ

SINGLE

NOT SPECIFIED

NOT SPECIFIED

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

0.006Ohm

-

-

-

-

NTD4804NT4G vs NTD4855N-35G
NTD4302

ON Semiconductor

OBSOLETE (Last Updated: 1 week ago)

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

4

SILICON

-55°C~150°C TJ

Tube

2005

e0

yes

Obsolete

1 (Unlimited)

2

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

4

R-PSSO-G2

1

1.04W Ta 75W Tc

Single

ENHANCEMENT MODE

75W

DRAIN

-

N-Channel

SWITCHING

10m Ω @ 20A, 10V

3V @ 250μA

2400pF @ 24V

8.4A Ta 68A Tc

80nC @ 10V

-

4.5V 10V

±20V

-

40 ns

68A

-

20V

30V

28A

-

-

-

-

-

Non-RoHS Compliant

Lead Free

Tin/Lead (Sn80Pb20)

-

-

-

722 mJ

-

235

NOT SPECIFIED

Not Qualified

-

0.01Ohm

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

30V

not_compliant

68A

NTD4804NT4G vs NTD4302