ON Semiconductor NTD4804NA-1G

Name: NTD4804NA-1G
Brand: ON Semiconductor
SKU: 2852600-NTD4804NA-1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD4804NA-1G

Manufacturer:: ON Semiconductor

Ventron No:: 2852600-NTD4804NA-1G

Description:: MOSFET N-CH 30V 14.5A IPAK

ECAD Model:

Datasheet:: NTD4804NA

Specifications

ON Semiconductor NTD4804NA-1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4804NA-1G.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2006
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
1.43W Ta 93.75W Tc
Element Configuration
Single
Power Dissipation
2.5W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4490pF @ 12V
Current - Continuous Drain (Id) @ 25°C
14.5A Ta 124A Tc
Gate Charge (Qg) (Max) @ Vgs
40nC @ 4.5V
Rise Time
20ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 11.5V
Vgs (Max)
±20V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
24 ns
Continuous Drain Current (ID)
124A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
RoHS Status
RoHS Compliant

Description

NTD4804NA-1G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4490pF @ 12V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 24 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 11.5V).

NTD4804NA-1G Features
a continuous drain current (ID) of 124A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 24 ns

NTD4804NA-1G Applications
There are a lot of ON Semiconductor
NTD4804NA-1G applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

NTD4804NA-1G More Descriptions

MOSFETs- Power and Small Signal NFET 30V 117A 4MOHM
MOSFET N-CH 30V 14.5A IPAK
RES SMD 470 OHM 1% 1/4W 1206
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:117A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:93.75W ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to NTD4804NA-1G.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

Element Configuration

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

RoHS Status

Surface Mount

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Lifecycle Status

ECCN Code

Lead Free

Additional Feature

Subcategory

Voltage - Rated DC

Terminal Form

Reach Compliance Code

Current Rating

View Compare
NTD4804NA-1G

ON Semiconductor

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

3

-55°C~175°C TJ

Tube

2006

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.43W Ta 93.75W Tc

Single

2.5W

N-Channel

4m Ω @ 30A, 10V

2.5V @ 250μA

4490pF @ 12V

14.5A Ta 124A Tc

40nC @ 4.5V

20ns

4.5V 11.5V

±20V

20 ns

24 ns

124A

20V

30V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD4906N-1G

ON Semiconductor

-

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-55°C~175°C TJ

Tube

-

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.38W Ta 37.5W Tc

-

-

N-Channel

5.5m Ω @ 30A, 10V

2.2V @ 250μA

1.932pF @ 15V

10.3A Ta 54A Tc

24nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

ROHS3 Compliant

NO

SILICON

e3

yes

3

MATTE TIN

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSIP-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

30V

14A

0.008Ohm

223A

30V

48 mJ

-

-

-

-

-

-

-

-

-

NTD4804NA-1G vs NTD4906N-1G
NTD4863NA-35G

ON Semiconductor

-

Through Hole

TO-251-3 Stub Leads, IPak

3

-55°C~175°C TJ

Tube

2010

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.27W Ta 36.6W Tc

Single

1.95W

N-Channel

9.3m Ω @ 30A, 10V

2.5V @ 250μA

990pF @ 12V

9.2A Ta 49A Tc

17.8nC @ 10V

-

-

-

-

-

11.3mA

20V

-

RoHS Compliant

NO

SILICON

e3

yes

3

Tin (Sn)

-

-

-

3

-

-

1

-

ENHANCEMENT MODE

DRAIN

SWITCHING

25V

9.2A

-

98A

25V

60.5 mJ

LAST SHIPMENTS (Last Updated: 1 week ago)

EAR99

Lead Free

-

-

-

-

-

-

NTD4804NA-1G vs NTD4863NA-35G
NTD4302

ON Semiconductor

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

4

-55°C~150°C TJ

Tube

2005

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

1.04W Ta 75W Tc

Single

75W

N-Channel

10m Ω @ 20A, 10V

3V @ 250μA

2400pF @ 24V

8.4A Ta 68A Tc

80nC @ 10V

-

4.5V 10V

±20V

-

40 ns

68A

20V

30V

Non-RoHS Compliant

YES

SILICON

e0

yes

2

Tin/Lead (Sn80Pb20)

-

235

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

-

ENHANCEMENT MODE

DRAIN

SWITCHING

-

-

0.01Ohm

28A

-

722 mJ

OBSOLETE (Last Updated: 1 week ago)

EAR99

Lead Free

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

GULL WING

not_compliant

68A

NTD4804NA-1G vs NTD4302