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NTD4804N-35G

ON Semiconductor NTD4804N-35G

Part Number:
NTD4804N-35G
Manufacturer:
ON Semiconductor
Ventron No:
2852566-NTD4804N-35G
Description:
MOSFET N-CH 30V 14.5A IPAK
ECAD Model:
Datasheet:
NTD,NVD4804N

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Specifications
ON Semiconductor NTD4804N-35G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4804N-35G.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Stub Leads, IPak
  • Supplier Device Package
    I-PAK
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    1.43W Ta 107W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    4mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4.49pF @ 12V
  • Current - Continuous Drain (Id) @ 25°C
    14.5A Ta 124A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    40nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 11.5V
  • Vgs (Max)
    ±20V
  • RoHS Status
    ROHS3 Compliant
Description
NTD4804N-35G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4.49pF @ 12V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 11.5V volts (4.5V 11.5V).

NTD4804N-35G Features
a 30V drain to source voltage (Vdss)


NTD4804N-35G Applications
There are a lot of Rochester Electronics, LLC
NTD4804N-35G applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
NTD4804N-35G More Descriptions
Tube Through Hole N-Channel Single Mosfet Transistor 14.5A Ta 124A Tc 117A 2.5W 5ns
Single N-Channel Power MOSFET 30V, 117A, 4mΩ
MOSFET, N, 30V, 3 I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:117A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:93.75W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:117A; Package / Case:IPAK; Power Dissipation Pd:93.75W; Power Dissipation Pd:2.5W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to NTD4804N-35G.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Lifecycle Status
    Factory Lead Time
    Surface Mount
    Number of Pins
    Transistor Element Material
    Published
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Pin Count
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Radiation Hardening
    Lead Free
    View Compare
  • NTD4804N-35G
    NTD4804N-35G
    ON Semiconductor
    Through Hole
    TO-251-3 Stub Leads, IPak
    I-PAK
    -55°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.43W Ta 107W Tc
    N-Channel
    4mOhm @ 30A, 10V
    2.5V @ 250μA
    4.49pF @ 12V
    14.5A Ta 124A Tc
    40nC @ 4.5V
    30V
    4.5V 11.5V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTD4804N-1G
    NTD4804N-1G
    ON Semiconductor
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    I-PAK
    -55°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.43W Ta 107W Tc
    N-Channel
    4mOhm @ 30A, 10V
    2.5V @ 250μA
    4.49pF @ 12V
    14.5A Ta 124A Tc
    40nC @ 4.5V
    30V
    4.5V 11.5V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NTD4804N-35G vs NTD4804N-1G
  • NTD4809N-35G
    NTD4809N-35G
    ON Semiconductor
    Through Hole
    TO-251-3 Stub Leads, IPak
    I-PAK
    -55°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.4W Ta 52W Tc
    N-Channel
    9mOhm @ 30A, 10V
    2.5V @ 250μA
    1.456pF @ 12V
    9.6A Ta 58A Tc
    13nC @ 4.5V
    30V
    4.5V 11.5V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NTD4804N-35G vs NTD4809N-35G
  • NTD4858N-35G
    NTD4858N-35G
    ON Semiconductor
    Through Hole
    TO-251-3 Stub Leads, IPak
    -
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    1.3W Ta 54.5W Tc
    N-Channel
    6.2m Ω @ 30A, 10V
    2.5V @ 250μA
    1563pF @ 12V
    11.2A Ta 73A Tc
    19.2nC @ 4.5V
    -
    4.5V 10V
    ±20V
    ROHS3 Compliant
    ACTIVE (Last Updated: 1 day ago)
    4 Weeks
    NO
    3
    SILICON
    2007
    e3
    yes
    3
    EAR99
    Tin (Sn)
    FET General Purpose Power
    3
    1
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    SWITCHING
    17.3ns
    2.8 ns
    23.8 ns
    13.6A
    20V
    25V
    No
    Lead Free
    NTD4804N-35G vs NTD4858N-35G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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