Fairchild/ON Semiconductor NDS8410A

Name: NDS8410A
Brand: Fairchild/ON Semiconductor
SKU: 2852692-NDS8410A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NDS8410A

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2852692-NDS8410A

Description:: MOSFET N-CH 30V 10.8A 8-SOIC

ECAD Model:

Datasheet:: NDS8410A

Specifications

Fairchild/ON Semiconductor NDS8410A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS8410A.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-PDSO-G8
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
12m Ω @ 10.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.62pF @ 15V
Current - Continuous Drain (Id) @ 25°C
10.8A Ta
Gate Charge (Qg) (Max) @ Vgs
22nC @ 5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
10.8A
Drain-source On Resistance-Max
0.012Ohm
DS Breakdown Voltage-Min
30V
RoHS Status
ROHS3 Compliant

Description

NDS8410A Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1.62pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 10.8A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

NDS8410A Features
a 30V drain to source voltage (Vdss)

NDS8410A Applications
There are a lot of Rochester Electronics, LLC
NDS8410A applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

NDS8410A More Descriptions

Trans MOSFET N-CH 30V 10.8A 8-Pin SOIC N T/R
MOSFETs 30V N-ChPowerTrench Single MOSFET
Small Signal Field-Effect Transistor
TAPE REEL / 30V N-CH. FET, 12 MO, SO8
This N-Channel MOSFET are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low inline power loss, and resistance to transients are needed.

Product Comparison

The three parts on the right have similar specifications to NDS8410A.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Reach Compliance Code

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

Published

ECCN Code

Subcategory

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

Lead Free

View Compare
NDS8410A

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Obsolete

1 (Unlimited)

8

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

12m Ω @ 10.8A, 10V

3V @ 250μA

1.62pF @ 15V

10.8A Ta

22nC @ 5V

30V

4.5V 10V

±20V

10.8A

0.012Ohm

30V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NDS8434A

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

yes

Obsolete

1 (Unlimited)

8

MATTE TIN

MOSFET (Metal Oxide)

DUAL

GULL WING

260

NOT SPECIFIED

8

R-PDSO-G8

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta

ENHANCEMENT MODE

P-Channel

SWITCHING

24m Ω @ 7.9A, 4.5V

1V @ 250μA

1.73pF @ 10V

7.8A Ta

55nC @ 4.5V

20V

2.5V 4.5V

±8V

7.8A

0.024Ohm

20V

ROHS3 Compliant

unknown

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NDS8410A vs NDS8434A
NDS8410

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

2.5W Ta

-

N-Channel

-

15m Ω @ 10A, 10V

1.5V @ 250μA

1350pF @ 15V

10A Ta

60nC @ 10V

30V

4.5V 10V

20V

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NDS8410A vs NDS8410
NDS8425

Fairchild/ON Semiconductor

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

8

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

-

1

-

2.5W Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

22m Ω @ 7.4A, 4.5V

1.5V @ 250μA

1098pF @ 15V

7.4A Ta

18nC @ 4.5V

-

2.7V 4.5V

±8V

-

0.022Ohm

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 3 days ago)

18 Weeks

Surface Mount

8

130mg

2001

EAR99

FET General Purpose Power

20V

7.4A

Single

2.5W

9 ns

13ns

11 ns

26 ns

7.4A

8V

20V

1.575mm

4.9mm

3.9mm

No

Lead Free

NDS8410A vs NDS8425