Fairchild/ON Semiconductor NDS8435A
- Part Number:
- NDS8435A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2490487-NDS8435A
- Description:
- MOSFET P-CH 30V 7.9A 8-SOIC
- Datasheet:
- NDS8435A
Fairchild/ON Semiconductor NDS8435A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS8435A.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Supplier Device Package8-SOIC
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2.5W Ta
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs23mOhm @ 7.9A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.8pF @ 15V
- Current - Continuous Drain (Id) @ 25°C7.9A Ta
- Gate Charge (Qg) (Max) @ Vgs67nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
NDS8435A Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.8pF @ 15V maximal input capacitance.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NDS8435A Features
a 30V drain to source voltage (Vdss)
NDS8435A Applications
There are a lot of Rochester Electronics, LLC
NDS8435A applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.8pF @ 15V maximal input capacitance.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NDS8435A Features
a 30V drain to source voltage (Vdss)
NDS8435A Applications
There are a lot of Rochester Electronics, LLC
NDS8435A applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
NDS8435A More Descriptions
Tube Surface Mount P-Channel Single Mosfet Transistor 7.9A Ta -7.9A 2.5W 46ns
Trans MOSFET P-CH 30V 7.9A 8-Pin SOIC N T/R
MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:7.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-7.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:25A; SMD Marking:NDS8435A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:-30V; Voltage Vgs Max:-1.3V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Min:-3V
SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Trans MOSFET P-CH 30V 7.9A 8-Pin SOIC N T/R
MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:7.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-7.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:25A; SMD Marking:NDS8435A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:-30V; Voltage Vgs Max:-1.3V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Min:-3V
SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
The three parts on the right have similar specifications to NDS8435A.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinLifecycle StatusFactory Lead TimeMountNumber of PinsWeightSeriesPublishedECCN CodeSubcategoryVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningLead FreeView Compare
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NDS8435ASurface Mount8-SOIC (0.154, 3.90mm Width)8-SOIC-55°C~150°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TaP-Channel23mOhm @ 7.9A, 10V3V @ 250μA1.8pF @ 15V7.9A Ta67nC @ 10V30V4.5V 10V±20VROHS3 Compliant-----------------------------------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TaP-Channel24m Ω @ 7.9A, 4.5V1V @ 250μA1.73pF @ 10V7.8A Ta55nC @ 4.5V20V2.5V 4.5V±8VROHS3 CompliantYESSILICONe3yes8MATTE TINDUALGULL WING260unknownNOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING7.8A0.024Ohm20V-------------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TaN-Channel15m Ω @ 10A, 10V1.5V @ 250μA1350pF @ 15V10A Ta60nC @ 10V30V4.5V 10V20VNon-RoHS Compliant----------------------------------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)Active1 (Unlimited)MOSFET (Metal Oxide)2.5W TaN-Channel22m Ω @ 7.4A, 4.5V1.5V @ 250μA1098pF @ 15V7.4A Ta18nC @ 4.5V-2.7V 4.5V±8VROHS3 Compliant-SILICONe3yes8Tin (Sn)DUALGULL WING------1-ENHANCEMENT MODESWITCHING-0.022Ohm-ACTIVE (Last Updated: 3 days ago)18 WeeksSurface Mount8130mgPowerTrench®2001EAR99FET General Purpose Power20V7.4ASingle2.5W9 ns13ns11 ns26 ns7.4A8V20V1.575mm4.9mm3.9mmNoLead Free
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