NDS8435A

Fairchild/ON Semiconductor NDS8435A

Part Number:
NDS8435A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2490487-NDS8435A
Description:
MOSFET P-CH 30V 7.9A 8-SOIC
ECAD Model:
Datasheet:
NDS8435A

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Specifications
Fairchild/ON Semiconductor NDS8435A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDS8435A.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Supplier Device Package
    8-SOIC
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    2.5W Ta
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    23mOhm @ 7.9A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1.8pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    7.9A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    67nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • RoHS Status
    ROHS3 Compliant
Description
NDS8435A Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.8pF @ 15V maximal input capacitance.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

NDS8435A Features
a 30V drain to source voltage (Vdss)


NDS8435A Applications
There are a lot of Rochester Electronics, LLC
NDS8435A applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
NDS8435A More Descriptions
Tube Surface Mount P-Channel Single Mosfet Transistor 7.9A Ta -7.9A 2.5W 46ns
Trans MOSFET P-CH 30V 7.9A 8-Pin SOIC N T/R
MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:7.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-7.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:25A; SMD Marking:NDS8435A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:-30V; Voltage Vgs Max:-1.3V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Min:-3V
SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Product Comparison
The three parts on the right have similar specifications to NDS8435A.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Lifecycle Status
    Factory Lead Time
    Mount
    Number of Pins
    Weight
    Series
    Published
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    View Compare
  • NDS8435A
    NDS8435A
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8-SOIC
    -55°C~150°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Ta
    P-Channel
    23mOhm @ 7.9A, 10V
    3V @ 250μA
    1.8pF @ 15V
    7.9A Ta
    67nC @ 10V
    30V
    4.5V 10V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NDS8434A
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Ta
    P-Channel
    24m Ω @ 7.9A, 4.5V
    1V @ 250μA
    1.73pF @ 10V
    7.8A Ta
    55nC @ 4.5V
    20V
    2.5V 4.5V
    ±8V
    ROHS3 Compliant
    YES
    SILICON
    e3
    yes
    8
    MATTE TIN
    DUAL
    GULL WING
    260
    unknown
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    7.8A
    0.024Ohm
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NDS8410
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Ta
    N-Channel
    15m Ω @ 10A, 10V
    1.5V @ 250μA
    1350pF @ 15V
    10A Ta
    60nC @ 10V
    30V
    4.5V 10V
    20V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NDS8425
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Ta
    N-Channel
    22m Ω @ 7.4A, 4.5V
    1.5V @ 250μA
    1098pF @ 15V
    7.4A Ta
    18nC @ 4.5V
    -
    2.7V 4.5V
    ±8V
    ROHS3 Compliant
    -
    SILICON
    e3
    yes
    8
    Tin (Sn)
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    SWITCHING
    -
    0.022Ohm
    -
    ACTIVE (Last Updated: 3 days ago)
    18 Weeks
    Surface Mount
    8
    130mg
    PowerTrench®
    2001
    EAR99
    FET General Purpose Power
    20V
    7.4A
    Single
    2.5W
    9 ns
    13ns
    11 ns
    26 ns
    7.4A
    8V
    20V
    1.575mm
    4.9mm
    3.9mm
    No
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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