Fairchild/ON Semiconductor NDB6060L

Name: NDB6060L
Brand: Fairchild/ON Semiconductor
SKU: 2484284-NDB6060L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NDB6060L

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2484284-NDB6060L

Description:: MOSFET N-CH 60V 48A TO-263AB

ECAD Model:

Datasheet:: NDB6060L

Specifications

Fairchild/ON Semiconductor NDB6060L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDB6060L.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Weight
1.31247g
Transistor Element Material
SILICON
Operating Temperature
-65°C~175°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
25mOhm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
48A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
100W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
100W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
20m Ω @ 24A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
48A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 5V
Rise Time
320ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
161 ns
Turn-Off Delay Time
49 ns
Continuous Drain Current (ID)
48A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
60V
Dual Supply Voltage
60V
Avalanche Energy Rating (Eas)
200 mJ
Nominal Vgs
2 V
Height
6.35mm
Length
6.35mm
Width
6.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NDB6060L MOSFET Description
ON Semiconductor's patented, high cell density, DMOS technology is used to manufacture this logic level N-Channel enhancement MOSFET NDB6060L. This extremely high-density technology has been specifically designed to decrease on-state resistance, provide improved switching performance, and withstand high-energy pulses in avalanche and commutation modes. The NDB6060L is ideal for low voltage applications such as automotive, DC/DC converters, PWM motor controllers, and other battery-powered circuits that require fast switching, low in-line power loss, and transient resistance.

NDB6060L MOSFET Features
48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V
Low drive requirements allow operation directly from logic drivers
175°C maximum junction temperature rating
The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
TO-220 and TO-263 (D2PAK) packages for both through-hole and surface mount applications
Critical DC electrical parameters specified at elevated temperature
High-density cell design for extremely low RDS(ON)
VGS(TH) < 2.0V.

NDB6060L MOSFET Applications
Battery Motor Control
Secondary Side Synchronous
Three-Phase Bridge for Brushless DC Motor Control
Up to 12s Battery Power Tools
Buck Converters
Power Converters with Multi-Megahertz Operation
Other Half and Full-Bridge Topologies
Circuit Protection
DC-DC Conversion
General Power Conversion

NDB6060L More Descriptions

N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 48A, 25mΩ
N-Channel 60 V 0.025 Ohm SMD Enhancement Mode Transistor - TO-263AB
Trans MOSFET N-CH 60V 48A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:60V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:100W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Capacitance Ciss Typ:1630pF; Current Id Max:48A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulse Current Idm:144A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Product Comparison

The three parts on the right have similar specifications to NDB6060L.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Current Rating

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Published

Terminal Finish

Drain to Source Voltage (Vdss)

Pulsed Drain Current-Max (IDM)

Reach Compliance Code

View Compare
NDB6060L

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

8 Weeks

Tin

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

1.31247g

SILICON

-65°C~175°C TJ

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

2

SMD/SMT

EAR99

25mOhm

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

60V

MOSFET (Metal Oxide)

GULL WING

48A

R-PSSO-G2

1

100W Tc

Single

ENHANCEMENT MODE

100W

DRAIN

15 ns

N-Channel

SWITCHING

20m Ω @ 24A, 10V

2V @ 250μA

2000pF @ 25V

48A Tc

60nC @ 5V

320ns

5V 10V

±16V

161 ns

49 ns

48A

2V

16V

60V

60V

200 mJ

2 V

6.35mm

6.35mm

6.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
NDB6020P

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 3 days ago)

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

1.31247g

SILICON

-65°C~175°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

2

-

EAR99

50mOhm

LOGIC LEVEL COMPATIBLE

Other Transistors

-20V

MOSFET (Metal Oxide)

GULL WING

-24A

R-PSSO-G2

1

60W Tc

Single

ENHANCEMENT MODE

60W

DRAIN

15 ns

P-Channel

SWITCHING

50m Ω @ 12A, 4.5V

1V @ 250μA

1590pF @ 10V

24A Tc

35nC @ 5V

27ns

4.5V

±8V

70 ns

120 ns

24A

-700mV

8V

-20V

-

-

-

11.33mm

10.67mm

4.83mm

No SVHC

No

RoHS Compliant

Lead Free

1998

Tin (Sn)

20V

70A

-

NDB6060L vs NDB6020P
NDB6060

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-65°C~175°C TJ

Tape & Reel (TR)

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

100W Tc

-

-

-

-

-

N-Channel

-

25m Ω @ 24A, 10V

4V @ 250μA

1800pF @ 25V

48A Tc

70nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

60V

-

compliant

NDB6060L vs NDB6060
NDB6030PL

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 3 days ago)

-

Tin

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

1.31247g

SILICON

-65°C~175°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

2

-

EAR99

25mOhm

-

Other Transistors

-30V

MOSFET (Metal Oxide)

GULL WING

-30A

R-PSSO-G2

1

75W Tc

Single

ENHANCEMENT MODE

75W

DRAIN

12.5 ns

P-Channel

SWITCHING

25m Ω @ 19A, 10V

2V @ 250μA

1570pF @ 15V

30A Tc

36nC @ 5V

60ns

4.5V 10V

±16V

52 ns

50 ns

-30A

-

16V

-30V

-

-

-

11.33mm

10.67mm

4.83mm

-

No

RoHS Compliant

Lead Free

1997

-

30V

90A

-

NDB6060L vs NDB6030PL

Certification

Related parts for NDB6060L

NDB603AL

Fairchild/ON Semiconductor

MOSFET N-CH 30V 25A D2PAK
NDB6020P

Fairchild/ON Semiconductor

MOSFET P-CH 20V 24A D2PAK
NDB6060

Fairchild/ON Semiconductor

MOSFET N-CH 60V 48A TO-263AB
NDB6060L

Fairchild/ON Semiconductor

MOSFET N-CH 60V 48A TO-263AB
NDB6030PL

Fairchild/ON Semiconductor

MOSFET P-CH 30V 30A D2PAK

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NDB6060L Specification

Part Number	Manufacturers	Description	Stock	Price
NDB6060L DISTI #NDB6060L	ON Semiconductor	MOSFET N-CH 60V 48A TO-263AB RoHS: Compliant	6	1 $2.5 10 $2.255 100 $1.8123
NDB6060L DISTI #NDB6060L	ON Semiconductor	MOSFET N-CH 60V 48A TO-263AB RoHS: Compliant	6	1 $2.5 10 $2.255 100 $1.8123
NDB6060L DISTI #NDB6060L	ON Semiconductor	MOSFET N-CH 60V 48A TO-263AB RoHS: Compliant	0	800 $1.23555
NDB6060L DISTI #NDB6060L	ON Semiconductor	Trans MOSFET N-CH 60V 48A 3-Pin(2 Tab) D2PAK T/R - RoHS: Compliant	74	1 $1.79 8 $1.59 20 $1.59 40 $1.59 100 $1.19 200 $1.19 400 $1.09
NDB6060L DISTI #NDB6060L	ON Semiconductor	Trans MOSFET N-CH 60V 48A 3-Pin(2 Tab) D2PAK T/R - RoHS: Compliant	0	800 $0.8079 1600 $0.8019 3200 $0.7919 4800 $0.7819 8000 $0.7629
NDB6060L DISTI #NDB6060L	ON Semiconductor	Trans MOSFET N-CH 60V 48A 3-Pin(2 Tab) D2PAK T/R - RoHS: Compliant	0
NDB6060L DISTI #NDB6060L	ON Semiconductor	MOSFET Transistor, N Channel, 48 A, 60 V, 0.02 ohm	1701	1 $2.1 10 $1.78 25 $1.66 50 $1.55 100 $1.43 250 $1.34 500 $1.25
NDB6060L DISTI #NDB6060L	ON Semiconductor	MOSFET, N CHANNEL, 60V, 48A, TO-263AB-3, Transist	0	1 $1.25 800 $1.25
NDB6060L DISTI #NDB6060L	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 48A I(D), 60V, 0.02 RoHS: Compliant	9162	1 $1.67 25 $1.55 100 $1.49 500 $1.43 1000 $1.36
NDB6060L DISTI #NDB6060L	ON Semiconductor	MOSFET N-Ch LL FET Enhancement Mode RoHS: Compliant	0	1 $2.1 10 $1.78 100 $1.43 500 $1.25
NDB6060L_Q DISTI #NDB6060L_Q	ON Semiconductor	MOSFET N-Ch LL FET Enhancement Mode RoHS: Not Compliant	0
NDB6060L DISTI #NDB6060L	Fairchild Semiconductor Corporation		270
NDB6060L DISTI #NDB6060L	Fairchild Semiconductor Corporation		84	3 $1.6875 13 $1.0969 47 $0.6328
NDB6060L DISTI #NDB6060L	Fairchild Semiconductor Corporation	MOSFET Transistor, N-Channel, TO-263AB	149	1 $1.869 14 $1.1214 55 $0.9345
NDB6060L DISTI #NDB6060L	Fairchild Semiconductor Corporation	MOSFET Transistor, N-Channel, TO-263AB	12	1 $2.2 3 $1.76 12 $1.32
NDB6060L DISTI #NDB6060L	Freescale Semiconductor	MOSFET Transistor, N-Channel, TO-263AB	21	1 $2.25 3 $1.8 12 $1.125
NDB6060L DISTI #NDB6060L	Unknown	MOSFET Transistor, N-Channel, TO-263AB	1080	1 $3.75 433 $2.0625 971 $1.875
NDB6060L DISTI #NDB6060L	Fairchild Semiconductor Corporation	MOSFET Transistor, N-Channel, TO-263AB	1	1 $4.5
NDB6060L DISTI #NDB6060L			1559
NDB6060L DISTI #NDB6060L	ON Semiconductor	MOSFET, N, D2-PAK RoHS: Compliant	1696	1 $2.02 10 $1.45 100 $1.16 250 $0.998 500 $0.839
NDB6060L DISTI #NDB6060L	ON Semiconductor	MOSFET, N, D2-PAK RoHS: Compliant	1701	1 $3.32 10 $2.82 100 $2.27 500 $1.98 800 $1.65

NDB6060~~(4)~~
NDB606~~(4)~~
NDB60~~(25)~~
NDB6~~(29)~~
NDB~~(115)~~

Fairchild/ON Semiconductor NDB6060L

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