Fairchild/ON Semiconductor NDB603AL
- Part Number:
- NDB603AL
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3586535-NDB603AL
- Description:
- MOSFET N-CH 30V 25A D2PAK
- ECAD Model:
-
- Datasheet:
- NDP603AL, NDB603AL
Fairchild/ON Semiconductor NDB603AL technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDB603AL.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~175°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishTIN LEAD
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max50W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs22m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.1pF @ 15V
- Current - Continuous Drain (Id) @ 25°C25A Tc
- Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)25A
- Drain-source On Resistance-Max0.022Ohm
- Pulsed Drain Current-Max (IDM)100A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)100 mJ
- RoHS StatusNon-RoHS Compliant
NDB603AL Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 100 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.1pF @ 15V.A device's drain current is its maximum continuous current, and this device's drain current is 25A.A maximum pulsed drain current of 100A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
NDB603AL Features
the avalanche energy rating (Eas) is 100 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
NDB603AL Applications
There are a lot of Rochester Electronics, LLC
NDB603AL applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 100 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.1pF @ 15V.A device's drain current is its maximum continuous current, and this device's drain current is 25A.A maximum pulsed drain current of 100A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
NDB603AL Features
the avalanche energy rating (Eas) is 100 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
NDB603AL Applications
There are a lot of Rochester Electronics, LLC
NDB603AL applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
NDB603AL More Descriptions
Trans MOSFET N-CH 30V 25A 3-Pin(2 Tab) TO-263AB
MOSFET N-CH 30V 25A D2PAK
French Electronic Distributor since 1988
N-CHANNEL POWER MOSFET
Not available to order .
MISCELLANEOUS MOSFETS;
MOSFET N-CH 30V 25A D2PAK
French Electronic Distributor since 1988
N-CHANNEL POWER MOSFET
Not available to order .
MISCELLANEOUS MOSFETS;
The three parts on the right have similar specifications to NDB603AL.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusLifecycle StatusFactory Lead TimeContact PlatingMountNumber of PinsWeightTerminationECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreePublishedView Compare
-
NDB603ALSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-65°C~175°C TJTape & Reel (TR)e0noObsolete1 (Unlimited)2TIN LEADMOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDunknownNOT SPECIFIEDR-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE50W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING22m Ω @ 25A, 10V3V @ 250μA1.1pF @ 15V25A Tc40nC @ 10V30V4.5V 10V±20V25A0.022Ohm100A30V100 mJNon-RoHS Compliant--------------------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---65°C~175°C TJTape & Reel (TR)--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)---compliant-----100W Tc--N-Channel-25m Ω @ 24A, 10V4V @ 250μA1800pF @ 25V48A Tc70nC @ 10V60V10V±20V--------------------------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-65°C~175°C TJTape & Reel (TR)e3yesActive1 (Unlimited)2-MOSFET (Metal Oxide)-GULL WING---R-PSSO-G2-1-100W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING20m Ω @ 24A, 10V2V @ 250μA2000pF @ 25V48A Tc60nC @ 5V-5V 10V±16V----200 mJROHS3 CompliantACTIVE (Last Updated: 3 days ago)8 WeeksTinSurface Mount31.31247gSMD/SMTEAR9925mOhmLOGIC LEVEL COMPATIBLEFET General Purpose Power60V48ASingle100W15 ns320ns161 ns49 ns48A2V16V60V60V2 V6.35mm6.35mm6.35mmNo SVHCNoLead Free-
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-65°C~175°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)2-MOSFET (Metal Oxide)-GULL WING---R-PSSO-G2-1-75W TcENHANCEMENT MODEDRAINP-ChannelSWITCHING25m Ω @ 19A, 10V2V @ 250μA1570pF @ 15V30A Tc36nC @ 5V30V4.5V 10V±16V--90A--RoHS CompliantLAST SHIPMENTS (Last Updated: 3 days ago)-TinSurface Mount-1.31247g-EAR9925mOhm-Other Transistors-30V-30ASingle75W12.5 ns60ns52 ns50 ns-30A-16V-30V--11.33mm10.67mm4.83mm-NoLead Free1997
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
25 January 2024
XC6206P332MR Voltage Regulator Manufacturer, Working principle, Characteristics and More
Ⅰ. Description of XC6206P332MRⅡ. Manufacturer of XC6206P332MRⅢ. Technical parameters of XC6206P332MRⅣ. Working principle of XC6206P332MRⅤ. Block diagram of XC6206P332MRⅥ. Characteristics of XC6206P332MRⅦ. Precautions for using XC6206P332MRⅧ. How to... -
25 January 2024
IRS2092S Audio Amplifier Technical Parameters, Alternatives, Applications and Other Details
Ⅰ. Overview of IRS2092SⅡ. Manufacturer of IRS2092SⅢ. Technical parameters of IRS2092SⅣ. How does IRS2092S work?Ⅴ. Circuit diagram of IRS2092SⅥ. Where is IRS2092S used?Ⅶ. What should we pay attention... -
26 January 2024
In-depth Understanding of 2SA1943 PNP Power Transistor
Ⅰ. 2SA1943 overviewⅡ. 2SA1943 symbol, footprint and pin configurationⅢ. Applications of 2SA1943Ⅳ. Absolute maximum ratings of 2SA1943Ⅴ. How does 2SA1943 transistor realize high collector current?Ⅵ. How to use... -
26 January 2024
What is NRF24L01 and How Does It Work?
Ⅰ. Overview of NRF24L01Ⅱ. Who is the manufacturer of NRF24L01?Ⅲ. Structural block diagram of NRF24L01Ⅳ. Applications of NRF24L01Ⅴ. Communication conditions of NRF24L01Ⅵ. Working modes of NRF24L01Ⅶ. Working principle...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.