Fairchild/ON Semiconductor NDB6020P

Name: NDB6020P
Brand: Fairchild/ON Semiconductor
SKU: 3586227-NDB6020P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NDB6020P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3586227-NDB6020P

Description:: MOSFET P-CH 20V 24A D2PAK

ECAD Model:

Datasheet:: NDB6020P

Specifications

Fairchild/ON Semiconductor NDB6020P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor NDB6020P.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 3 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Weight
1.31247g
Transistor Element Material
SILICON
Operating Temperature
-65°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
50mOhm
Terminal Finish
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
-24A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
60W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
60W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
50m Ω @ 12A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1590pF @ 10V
Current - Continuous Drain (Id) @ 25°C
24A Tc
Gate Charge (Qg) (Max) @ Vgs
35nC @ 5V
Rise Time
27ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
4.5V
Vgs (Max)
±8V
Fall Time (Typ)
70 ns
Turn-Off Delay Time
120 ns
Continuous Drain Current (ID)
24A
Threshold Voltage
-700mV
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
-20V
Pulsed Drain Current-Max (IDM)
70A
Height
11.33mm
Length
10.67mm
Width
4.83mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

NDB6020P Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make these logic level P-Channel enhancement mode power field-effect transistors. In the avalanche and commutation modes, this very high-density technology has been specifically optimized to decrease on-state resistance, provide improved switching performance, and withstand high-energy pulses. These devices are ideal for low-voltage applications including automotive, DC/DC converters, PWM motor controllers, and other battery-powered circuits that require fast switching, minimal in-line power loss, and transient resistance.

NDB6020P Features
Critical DC electrical parameters are specified at elevated temperatures.
The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High-density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) packages for both through-hole and surface mount applications.

NDB6020P Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

NDB6020P More Descriptions

P-Channel Logic Level Enhancement Mode Field Effect Transistor -20V, -24A, 50mΩ
Trans MOSFET P-CH 20V 24A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 24A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Product Comparison

The three parts on the right have similar specifications to NDB6020P.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Current Rating

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Reach Compliance Code

Factory Lead Time

Contact Plating

Termination

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

View Compare
NDB6020P

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 3 days ago)

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

1.31247g

SILICON

-65°C~175°C TJ

Tape & Reel (TR)

1998

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

50mOhm

Tin (Sn)

LOGIC LEVEL COMPATIBLE

Other Transistors

-20V

MOSFET (Metal Oxide)

GULL WING

-24A

R-PSSO-G2

1

60W Tc

Single

ENHANCEMENT MODE

60W

DRAIN

15 ns

P-Channel

SWITCHING

50m Ω @ 12A, 4.5V

1V @ 250μA

1590pF @ 10V

24A Tc

35nC @ 5V

27ns

20V

4.5V

±8V

70 ns

120 ns

24A

-700mV

8V

-20V

70A

11.33mm

10.67mm

4.83mm

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-
NDB6060

Fairchild/ON Semiconductor

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-65°C~175°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

100W Tc

-

-

-

-

-

N-Channel

-

25m Ω @ 24A, 10V

4V @ 250μA

1800pF @ 25V

48A Tc

70nC @ 10V

-

60V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

compliant

-

-

-

-

-

-

NDB6020P vs NDB6060
NDB6060L

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

1.31247g

SILICON

-65°C~175°C TJ

Tape & Reel (TR)

-

e3

yes

Active

1 (Unlimited)

2

EAR99

25mOhm

-

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

60V

MOSFET (Metal Oxide)

GULL WING

48A

R-PSSO-G2

1

100W Tc

Single

ENHANCEMENT MODE

100W

DRAIN

15 ns

N-Channel

SWITCHING

20m Ω @ 24A, 10V

2V @ 250μA

2000pF @ 25V

48A Tc

60nC @ 5V

320ns

-

5V 10V

±16V

161 ns

49 ns

48A

2V

16V

60V

-

6.35mm

6.35mm

6.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

8 Weeks

Tin

SMD/SMT

60V

200 mJ

2 V

NDB6020P vs NDB6060L
NDB6030PL

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 3 days ago)

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

1.31247g

SILICON

-65°C~175°C TJ

Tape & Reel (TR)

1997

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

25mOhm

-

-

Other Transistors

-30V

MOSFET (Metal Oxide)

GULL WING

-30A

R-PSSO-G2

1

75W Tc

Single

ENHANCEMENT MODE

75W

DRAIN

12.5 ns

P-Channel

SWITCHING

25m Ω @ 19A, 10V

2V @ 250μA

1570pF @ 15V

30A Tc

36nC @ 5V

60ns

30V

4.5V 10V

±16V

52 ns

50 ns

-30A

-

16V

-30V

90A

11.33mm

10.67mm

4.83mm

-

No

RoHS Compliant

Lead Free

-

-

Tin

-

-

-

-

NDB6020P vs NDB6030PL