ON Semiconductor MMBTA42LT3
- Part Number:
- MMBTA42LT3
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472169-MMBTA42LT3
- Description:
- TRANS NPN 300V 0.5A SOT-23
- Datasheet:
- MMBTA42LT3
ON Semiconductor MMBTA42LT3 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA42LT3.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Voltage - Rated DC300V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating500mA
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMMBTA42
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Gain Bandwidth Product50MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)6V
- hFE Min25
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MMBTA42LT3 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 30mA 10V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 50MHz.A maximum collector current of 500mA volts can be achieved.
MMBTA42LT3 Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MMBTA42LT3 Applications
There are a lot of ON Semiconductor
MMBTA42LT3 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 30mA 10V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 50MHz.A maximum collector current of 500mA volts can be achieved.
MMBTA42LT3 Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MMBTA42LT3 Applications
There are a lot of ON Semiconductor
MMBTA42LT3 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA42LT3 More Descriptions
500 mA, 300 V High Voltage NPN Bipolar Junction Transistor
Small Signal Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
TRANS NPN 300V 0.5A SOT-23
RES SMD 1.2M OHM 1% 2/3W 1210
Small Signal Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
TRANS NPN 300V 0.5A SOT-23
RES SMD 1.2M OHM 1% 2/3W 1210
The three parts on the right have similar specifications to MMBTA42LT3.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeFactory Lead TimeMountJESD-30 CodeConfigurationPower - MaxTransistor ApplicationFrequency - TransitionTurn Off Time-Max (toff)Turn On Time-Max (ton)WeightSeriesTerminationFrequencyPower DissipationCurrent - Collector (Ic) (Max)Max Breakdown VoltageMax Junction Temperature (Tj)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityVoltage - Collector Emitter Breakdown (Max)Max FrequencyView Compare
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MMBTA42LT3LAST SHIPMENTS (Last Updated: 1 day ago)Surface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2009e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)8541.21.00.95Other Transistors300V225mWDUALGULL WING240not_compliant500mA30MMBTA423Not Qualified1Single50MHzNPNNPN500mV500mA40 @ 30mA 10V100nA ICBO500mV @ 2mA, 20mA300V50MHz500mV300V6V25Non-RoHS CompliantContains Lead------------------------------
-
-Surface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2011e3-Active1 (Unlimited)3-Tin (Sn)-Other Transistors-225mWDUALGULL WINGNOT SPECIFIED--NOT SPECIFIED---1--NPNNPN1V600mA100 @ 150mA 10mV10nA1V @ 50mA, 500mA40V300MHz----ROHS3 Compliant-10 WeeksSurface MountR-PDSO-G3SINGLE300mWSWITCHING300MHz285ns35ns--------------------
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-Surface MountSOT-523-3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-Other Transistors-60V150mWDUALGULL WING260--600mA30MMBT2907A3-1Single200MHzPNPPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V200MHz-1.6V-60V-5V100ROHS3 CompliantLead Free15 WeeksSurface Mount------45ns2.012816mgAutomotive, AEC-Q101SMD/SMT200MHz150mW600mA60V150°C-600mA900μm1.6mm800μmNo SVHCNo------
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-Surface MountSC-89, SOT-490-3-150°C TJTape & Reel (TR)2004--Last Time Buy1 (Unlimited)------250mW------MMBT2222--1Single300MHz-NPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V-1V75V6V75ROHS3 CompliantLead Free16 WeeksSurface Mount--250mW-300MHz--30mg--300MHz250mW600mA40V--780μm1.7mm980μm--SOT-523F150°C-55°CNPN40V100MHz
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