MMBTA20LT1G

ON Semiconductor MMBTA20LT1G

Part Number:
MMBTA20LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2472200-MMBTA20LT1G
Description:
TRANS NPN 40V 0.1A SOT-23
ECAD Model:
Datasheet:
MMBTA20LT1G

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
ON Semiconductor MMBTA20LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA20LT1G.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    MATTE TIN
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    225mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • JEDEC-95 Code
    TO-236AB
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 1mA, 10mA
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    125MHz
  • Frequency - Transition
    125MHz
  • RoHS Status
    ROHS3 Compliant
Description
MMBTA20LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 5mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 1mA, 10mA.Parts of this part have transition frequencies of 125MHz.This device displays a 40V maximum voltage - Collector Emitter Breakdown.

MMBTA20LT1G Features
the DC current gain for this device is 40 @ 5mA 10V
the vce saturation(Max) is 250mV @ 1mA, 10mA
a transition frequency of 125MHz


MMBTA20LT1G Applications
There are a lot of Rochester Electronics, LLC
MMBTA20LT1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBTA20LT1G More Descriptions
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 40 @ 5mA 10V 100nA ICBO 225mW 125MHz
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
SMALL SIGNAL BIPOLAR TRANSISTOR
MMBTA20LT1G, SINGLE BIPOLAR TRANSISTORS;
Product Comparison
The three parts on the right have similar specifications to MMBTA20LT1G.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    RoHS Status
    Factory Lead Time
    Mount
    Published
    Subcategory
    Max Power Dissipation
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Number of Pins
    Weight
    Series
    ECCN Code
    Voltage - Rated DC
    Current Rating
    Frequency
    Base Part Number
    Element Configuration
    Power Dissipation
    Gain Bandwidth Product
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Termination
    Max Junction Temperature (Tj)
    View Compare
  • MMBTA20LT1G
    MMBTA20LT1G
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    MATTE TIN
    DUAL
    GULL WING
    260
    unknown
    40
    3
    R-PDSO-G3
    COMMERCIAL
    1
    SINGLE
    225mW
    AMPLIFIER
    NPN
    NPN
    40 @ 5mA 10V
    100nA ICBO
    TO-236AB
    250mV @ 1mA, 10mA
    40V
    100mA
    125MHz
    125MHz
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT2222A-G
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    -
    Active
    1 (Unlimited)
    3
    Tin (Sn)
    DUAL
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    R-PDSO-G3
    -
    1
    SINGLE
    300mW
    SWITCHING
    NPN
    NPN
    100 @ 150mA 10mV
    10nA
    -
    1V @ 50mA, 500mA
    -
    -
    300MHz
    300MHz
    ROHS3 Compliant
    10 Weeks
    Surface Mount
    2011
    Other Transistors
    225mW
    1V
    600mA
    40V
    285ns
    35ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT4126-7-F
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Active
    1 (Unlimited)
    3
    Matte Tin (Sn)
    DUAL
    GULL WING
    260
    -
    40
    3
    -
    -
    1
    -
    -
    SWITCHING
    PNP
    PNP
    120 @ 2mA 1V
    50nA ICBO
    -
    400mV @ 5mA, 50mA
    -
    -
    250MHz
    -
    ROHS3 Compliant
    15 Weeks
    Surface Mount
    2008
    Other Transistors
    300mW
    25V
    200mA
    25V
    -
    -
    3
    7.994566mg
    Automotive, AEC-Q101
    EAR99
    -25V
    -200mA
    250MHz
    MMBT4126
    Single
    300mW
    250MHz
    -400mV
    25V
    25V
    -4V
    120
    -200mA
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    Lead Free
    -
    -
  • MMBT2907AT-7-F
    Surface Mount
    SOT-523
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Active
    1 (Unlimited)
    3
    Matte Tin (Sn) - annealed
    DUAL
    GULL WING
    260
    -
    30
    3
    -
    -
    1
    -
    -
    -
    PNP
    PNP
    100 @ 150mA 10V
    10nA ICBO
    -
    1.6V @ 50mA, 500mA
    -
    600mA
    200MHz
    -
    ROHS3 Compliant
    15 Weeks
    Surface Mount
    2007
    Other Transistors
    150mW
    -60V
    -600mA
    -60V
    -
    45ns
    3
    2.012816mg
    Automotive, AEC-Q101
    EAR99
    -60V
    -600mA
    200MHz
    MMBT2907A
    Single
    150mW
    200MHz
    -1.6V
    60V
    -60V
    -5V
    100
    -600mA
    900μm
    1.6mm
    800μm
    No SVHC
    No
    Lead Free
    SMD/SMT
    150°C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.