ON Semiconductor MMBTA20LT1G
- Part Number:
- MMBTA20LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2472200-MMBTA20LT1G
- Description:
- TRANS NPN 40V 0.1A SOT-23
- Datasheet:
- MMBTA20LT1G
ON Semiconductor MMBTA20LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA20LT1G.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max225mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 5mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- JEDEC-95 CodeTO-236AB
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
- Voltage - Collector Emitter Breakdown (Max)40V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency125MHz
- Frequency - Transition125MHz
- RoHS StatusROHS3 Compliant
MMBTA20LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 5mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 1mA, 10mA.Parts of this part have transition frequencies of 125MHz.This device displays a 40V maximum voltage - Collector Emitter Breakdown.
MMBTA20LT1G Features
the DC current gain for this device is 40 @ 5mA 10V
the vce saturation(Max) is 250mV @ 1mA, 10mA
a transition frequency of 125MHz
MMBTA20LT1G Applications
There are a lot of Rochester Electronics, LLC
MMBTA20LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 5mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 1mA, 10mA.Parts of this part have transition frequencies of 125MHz.This device displays a 40V maximum voltage - Collector Emitter Breakdown.
MMBTA20LT1G Features
the DC current gain for this device is 40 @ 5mA 10V
the vce saturation(Max) is 250mV @ 1mA, 10mA
a transition frequency of 125MHz
MMBTA20LT1G Applications
There are a lot of Rochester Electronics, LLC
MMBTA20LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA20LT1G More Descriptions
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 40 @ 5mA 10V 100nA ICBO 225mW 125MHz
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
SMALL SIGNAL BIPOLAR TRANSISTOR
MMBTA20LT1G, SINGLE BIPOLAR TRANSISTORS;
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
SMALL SIGNAL BIPOLAR TRANSISTOR
MMBTA20LT1G, SINGLE BIPOLAR TRANSISTORS;
The three parts on the right have similar specifications to MMBTA20LT1G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusFactory Lead TimeMountPublishedSubcategoryMax Power DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTurn Off Time-Max (toff)Turn On Time-Max (ton)Number of PinsWeightSeriesECCN CodeVoltage - Rated DCCurrent RatingFrequencyBase Part NumberElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningLead FreeTerminationMax Junction Temperature (Tj)View Compare
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MMBTA20LT1GSurface MountTO-236-3, SC-59, SOT-23-3YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)3MATTE TINDUALGULL WING260unknown403R-PDSO-G3COMMERCIAL1SINGLE225mWAMPLIFIERNPNNPN40 @ 5mA 10V100nA ICBOTO-236AB250mV @ 1mA, 10mA40V100mA125MHz125MHzROHS3 Compliant------------------------------------
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Surface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)e3-Active1 (Unlimited)3Tin (Sn)DUALGULL WINGNOT SPECIFIED-NOT SPECIFIED-R-PDSO-G3-1SINGLE300mWSWITCHINGNPNNPN100 @ 150mA 10mV10nA-1V @ 50mA, 500mA--300MHz300MHzROHS3 Compliant10 WeeksSurface Mount2011Other Transistors225mW1V600mA40V285ns35ns-------------------------
-
Surface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)3Matte Tin (Sn)DUALGULL WING260-403--1--SWITCHINGPNPPNP120 @ 2mA 1V50nA ICBO-400mV @ 5mA, 50mA--250MHz-ROHS3 Compliant15 WeeksSurface Mount2008Other Transistors300mW25V200mA25V--37.994566mgAutomotive, AEC-Q101EAR99-25V-200mA250MHzMMBT4126Single300mW250MHz-400mV25V25V-4V120-200mA1mm3.05mm1.4mmNo SVHCNoLead Free--
-
Surface MountSOT-523-SILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)3Matte Tin (Sn) - annealedDUALGULL WING260-303--1---PNPPNP100 @ 150mA 10V10nA ICBO-1.6V @ 50mA, 500mA-600mA200MHz-ROHS3 Compliant15 WeeksSurface Mount2007Other Transistors150mW-60V-600mA-60V-45ns32.012816mgAutomotive, AEC-Q101EAR99-60V-600mA200MHzMMBT2907ASingle150mW200MHz-1.6V60V-60V-5V100-600mA900μm1.6mm800μmNo SVHCNoLead FreeSMD/SMT150°C
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