Fairchild/ON Semiconductor MMBTA14
- Part Number:
- MMBTA14
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2462962-MMBTA14
- Description:
- TRANS NPN DARL 30V 1.2A SOT-23
- Datasheet:
- MMBTA13LT1,MMBTA14LT1
Fairchild/ON Semiconductor MMBTA14 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBTA14.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- Power - Max350mW
- Polarity/Channel TypeNPN
- Transistor TypeNPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 100μA, 100mA
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)1.2A
- Transition Frequency125MHz
- Frequency - Transition125MHz
- RoHS StatusROHS3 Compliant
MMBTA14 Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.125MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 30V.
MMBTA14 Features
the DC current gain for this device is 20000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 125MHz
MMBTA14 Applications
There are a lot of Rochester Electronics, LLC
MMBTA14 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 20000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.125MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 30V.
MMBTA14 Features
the DC current gain for this device is 20000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 125MHz
MMBTA14 Applications
There are a lot of Rochester Electronics, LLC
MMBTA14 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBTA14 More Descriptions
BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, NPN, 30 V, 125 MHZ, 350 MW, 1.2 A, 20000 ROHS COMPLIANT: YES
MMBTA14 Series 30 V CE Breakdown 1.2 A NPN Darlington Transistor - SOT-23
Small Signal Bipolar Transistor, 0.3A I(C), NPN
Tape & Reel (TR) Surface Mount NPN - Darlington Single Bipolar (BJT) Transistor 20000 @ 100mA 5V 1.2A 350mW 125MHz
Trans Darlington NPN 30V 1.2A 3-Pin SOT-23 T/R
NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
TRANSISTOR NPN DARL 0.3A 30V SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:125MHz; Power Dissipation Pd:350mW; DC Collector Current:1.2A; DC Current Gain hFE:20000; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1.5V; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:125MHz; Hfe Min:10000; Package / Case:SOT-23; Power Dissipation Pd:350mW; Termination Type:SMD; Transistor Type:Darlington
MMBTA14 Series 30 V CE Breakdown 1.2 A NPN Darlington Transistor - SOT-23
Small Signal Bipolar Transistor, 0.3A I(C), NPN
Tape & Reel (TR) Surface Mount NPN - Darlington Single Bipolar (BJT) Transistor 20000 @ 100mA 5V 1.2A 350mW 125MHz
Trans Darlington NPN 30V 1.2A 3-Pin SOT-23 T/R
NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
TRANSISTOR NPN DARL 0.3A 30V SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:125MHz; Power Dissipation Pd:350mW; DC Collector Current:1.2A; DC Current Gain hFE:20000; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1.5V; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:125MHz; Hfe Min:10000; Package / Case:SOT-23; Power Dissipation Pd:350mW; Termination Type:SMD; Transistor Type:Darlington
The three parts on the right have similar specifications to MMBTA14.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsPower - MaxPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusMountNumber of PinsWeightSeriesPublishedECCN CodeVoltage - Rated DCMax Power DissipationReach Compliance CodeCurrent RatingFrequencyBase Part NumberPin CountElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCLead FreeFactory Lead TimeSubcategoryCollector Emitter Saturation VoltageRadiation HardeningView Compare
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MMBTA14Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)3MATTE TINDUALGULL WING26040R-PDSO-G3COMMERCIAL1350mWNPNNPN - Darlington20000 @ 100mA 5V100nA ICBO1.5V @ 100μA, 100mA30V1.2A125MHz125MHzROHS3 Compliant-----------------------------------
-
Surface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)e0-Obsolete1 (Unlimited)3-DUALGULL WING23510-Not Qualified1-NPNNPN120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA--300MHz-Non-RoHS CompliantSurface Mount37.994566mgAutomotive, AEC-Q1012005EAR9925V300mWnot_compliant200mA300MHzMMBT41243Single300mWSWITCHING300MHz25V200mA25V25V30V5V120200mA1mm3.05mm1.4mmNo SVHCContains Lead----
-
Surface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)3Matte Tin (Sn)DUALGULL WING26040--1-PNPPNP120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA--250MHz-ROHS3 CompliantSurface Mount37.994566mgAutomotive, AEC-Q1012008EAR99-25V300mW--200mA250MHzMMBT41263Single300mWSWITCHING250MHz25V200mA25V25V25V-4V120-200mA1mm3.05mm1.4mmNo SVHCLead Free15 WeeksOther Transistors-400mVNo
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Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)---------350mW-NPN100 @ 10mA 1V-300mV @ 5mA, 50mA40V200mA-300MHz------------MMBT3904----------------------
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