Fairchild/ON Semiconductor MMBTA13

Name: MMBTA13
Brand: Fairchild/ON Semiconductor
SKU: 2463000-MMBTA13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMBTA13

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2463000-MMBTA13

Description:: TRANS NPN DARL 30V 1.2A SOT-23

ECAD Model:

Datasheet:: MMBTA13

Specifications

Fairchild/ON Semiconductor MMBTA13 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBTA13.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 day ago)
Factory Lead Time
39 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
SOT-23-3
Weight
30mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
30V
Max Power Dissipation
350mW
Current Rating
1.2A
Base Part Number
MMBTA13
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
350mW
Power - Max
350mW
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
1.2A
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
30V
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
1.2A
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
30V
Frequency - Transition
125MHz
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
10V
hFE Min
10000
Height
930μm
Length
2.92mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

MMBTA13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor can be broken down at a voltage of 30V volts.There is no device package available from the supplier for this product.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 1.2A volts.

MMBTA13 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 1.2A
the supplier device package of SOT-23-3

MMBTA13 Applications
There are a lot of ON Semiconductor
MMBTA13 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MMBTA13 More Descriptions

MMBTA13 Series 30 V CE Breakdown 1.2 A NPN Darlington Transistor - SOT-23
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
TRANSISTOR, DARLINGTON SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: -; Power Dissipation Pd: 350mW; DC Collector Current: 1.2A; DC Current Gain hFE: 5000hFE; Transistor Ca
Small Signal Bipolar Transistor; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):10000; Package/Case:SOT-323; C-E Breakdown Voltage:30V; DC Collector Current:1.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
DARLINGTON TRANSISTOR, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:350mW; DC Collector Current:1.2A; DC Current Gain hFE:10000; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Av Current Ic:1.2A; Collector Emitter Voltage Vces:1.5V; Continuous Collector Current Ic Max:300mA; Current Ic Continuous a Max:1.2A; Current Ic hFE:10A; Device Marking:MMBTA13; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Gain Bandwidth ft Min:125MHz; Gain Bandwidth ft Typ:125MHz; Hfe Min:10000; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:1M; Termination Type:SMD; Transistor Type:Darlington; Voltage Vcbo:30V

Product Comparison

The three parts on the right have similar specifications to MMBTA13.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Number of Elements

Polarity

Element Configuration

Power Dissipation

Power - Max

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Transistor Element Material

Series

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Pin Count

Gain Bandwidth Product

Polarity/Channel Type

Transition Frequency

Continuous Collector Current

Turn Off Time-Max (toff)

Turn On Time-Max (ton)

Terminal Finish

Transistor Application

Termination

Max Junction Temperature (Tj)

View Compare
MMBTA13

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 day ago)

39 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SOT-23-3

30mg

-55°C~150°C TJ

Tape & Reel (TR)

2005

Obsolete

1 (Unlimited)

150°C

-55°C

30V

350mW

1.2A

MMBTA13

1

NPN

Single

350mW

350mW

NPN - Darlington

30V

1.2A

10000 @ 100mA 5V

100nA ICBO

1.5V @ 100μA, 100mA

30V

30V

1.2A

1.5V

30V

125MHz

30V

10V

10000

930μm

2.92mm

1.3mm

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MMBT3904T-7-F

Diodes Incorporated

-

15 Weeks

Tin

Surface Mount

Surface Mount

SOT-523

3

-

2.012816mg

-55°C~150°C TJ

Tape & Reel (TR)

2007

Active

1 (Unlimited)

-

-

40V

150mW

200mA

MMBT3904

1

-

Single

150mW

-

NPN

40V

200mA

100 @ 10mA 1V

-

300mV @ 5mA, 50mA

40V

-

-

300mV

40V

-

60V

6V

100

750μm

1.6mm

800μm

No SVHC

No

ROHS3 Compliant

Lead Free

SILICON

Automotive, AEC-Q101

e3

yes

3

EAR99

Other Transistors

DUAL

GULL WING

260

300MHz

40

3

300MHz

NPN

300MHz

200mA

250ns

70ns

-

-

-

-

MMBTA13 vs MMBT3904T-7-F
MMBT4126-7-F

Diodes Incorporated

-

15 Weeks

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

7.994566mg

-55°C~150°C TJ

Tape & Reel (TR)

2008

Active

1 (Unlimited)

-

-

-25V

300mW

-200mA

MMBT4126

1

-

Single

300mW

-

PNP

25V

200mA

120 @ 2mA 1V

50nA ICBO

400mV @ 5mA, 50mA

25V

-

-

-400mV

25V

-

25V

-4V

120

1mm

3.05mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

SILICON

Automotive, AEC-Q101

e3

yes

3

EAR99

Other Transistors

DUAL

GULL WING

260

250MHz

40

3

250MHz

PNP

250MHz

-200mA

-

-

Matte Tin (Sn)

SWITCHING

-

-

MMBTA13 vs MMBT4126-7-F
MMBT2907AT-7-F

Diodes Incorporated

-

15 Weeks

-

Surface Mount

Surface Mount

SOT-523

3

-

2.012816mg

-55°C~150°C TJ

Tape & Reel (TR)

2007

Active

1 (Unlimited)

-

-

-60V

150mW

-600mA

MMBT2907A

1

-

Single

150mW

-

PNP

-60V

-600mA

100 @ 150mA 10V

10nA ICBO

1.6V @ 50mA, 500mA

-60V

-

600mA

-1.6V

60V

-

-60V

-5V

100

900μm

1.6mm

800μm

No SVHC

No

ROHS3 Compliant

Lead Free

SILICON

Automotive, AEC-Q101

e3

yes

3

EAR99

Other Transistors

DUAL

GULL WING

260

200MHz

30

3

200MHz

PNP

200MHz

-600mA

-

45ns

Matte Tin (Sn) - annealed

-

SMD/SMT

150°C

MMBTA13 vs MMBT2907AT-7-F