ON Semiconductor MMBTA06LT1G
- Part Number:
- MMBTA06LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068628-MMBTA06LT1G
- Description:
- TRANS NPN 80V 0.5A SOT23
- Datasheet:
- MMBTA06LT1G
ON Semiconductor MMBTA06LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBTA06LT1G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC80V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBTA06
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage80V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage80V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)4V
- hFE Min100
- Height1.016mm
- Length3.0226mm
- Width1.397mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBTA06LT1G Description
MMBTA06LT1G NPN transistor is designed for linear and switching applications. Comparatively the Field-effect transistors, MMBTA06LT1G transistors have slower switching speeds, their input impedance is very low and the power consumption is significant. On Semiconductor MMBTA06LT1G is widely used in television, broadcasting communications radar, computers, electronic devices for automatic control as well as household appliances as well as many other fields.
MMBTA06LT1G Features
AEC?Q101 Qualified and PPAP Capable
Miniature SOT-23 Surface Mount Package Saves Board Space
Pb?Free
Control Change Requirements
Halogen Free/BFR Free
RoHS Compliant
MMBTA06LT1G Applications
Television
Broadcasting communications
Radar
Computers
Household appliances
MMBTA06LT1G More Descriptions
Single Bipolar Transistor, NPN, 80 V, 500 mA, 225 mW, SOT-23, 3 Pin, Surface Mount
Transistor, Bipolar,Si,NPN,Driver,VCEO 80VDC,IC 500mA,PD 225mW,SOT-23,VCBO 80VDC
Transistor: NPN; bipolar; 80V; 0.5A; 225mW; -55 150 deg.C; SMD; SOT23
Trans GP BJT NPN 80V 0.5A 300mW Automotive 3-Pin SOT-23 T/R
MMBTA06L Series NPN 80 V 500 mA SMT Driver Transistor - SOT-23
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
Transistor GP BJT NPN 80V 0.5A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt
Bjt, Npn, 80V Sot-23, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:500Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MMBTA06LT1G.
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 500 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 300 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 250 / Reflow Temperature Max. °C = 260
Transistor, Bipolar,Si,NPN,Driver,VCEO 80VDC,IC 500mA,PD 225mW,SOT-23,VCBO 80VDC
Transistor: NPN; bipolar; 80V; 0.5A; 225mW; -55 150 deg.C; SMD; SOT23
Trans GP BJT NPN 80V 0.5A 300mW Automotive 3-Pin SOT-23 T/R
MMBTA06L Series NPN 80 V 500 mA SMT Driver Transistor - SOT-23
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
Transistor GP BJT NPN 80V 0.5A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt
Bjt, Npn, 80V Sot-23, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:500Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MMBTA06LT1G.
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 500 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 300 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 250 / Reflow Temperature Max. °C = 260
The three parts on the right have similar specifications to MMBTA06LT1G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountWeightSeriesContinuous Collector CurrentTurn Off Time-Max (toff)Turn On Time-Max (ton)Reach Compliance CodeQualification StatusSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyFrequency - TransitionView Compare
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MMBTA06LT1GACTIVE (Last Updated: 1 day ago)4 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Other Transistors80V225mWDUALGULL WING260500mA100MHz40MMBTA0631Single300mWAMPLIFIER100MHzNPNNPN80V500mA100 @ 100mA 1V100nA250mV @ 10mA, 100mA80V100MHz250mV80V80V4V1001.016mm3.0226mm1.397mmNo SVHCNoROHS3 CompliantLead Free------------------
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-15 WeeksTinSurface MountSOT-523-3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Other Transistors40V150mWDUALGULL WING260200mA300MHz40MMBT390431Single150mW-300MHzNPNNPN40V200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V300MHz300mV40V60V6V100750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead FreeSurface Mount2.012816mgAutomotive, AEC-Q101200mA250ns70ns-----------
-
---Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2005e0-Obsolete1 (Unlimited)3EAR99-25V300mWDUALGULL WING235200mA300MHz10MMBT412431Single300mWSWITCHING300MHzNPNNPN25V200mA120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA25V300MHz-25V30V5V1201mm3.05mm1.4mmNo SVHC-Non-RoHS CompliantContains LeadSurface Mount7.994566mgAutomotive, AEC-Q101200mA--not_compliantNot Qualified---------
-
-16 Weeks-Surface MountSC-89, SOT-490-3-150°C TJTape & Reel (TR)2004--Last Time Buy1 (Unlimited)----250mW----300MHz-MMBT2222-1Single250mW-300MHz-NPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V-1V40V75V6V75780μm1.7mm980μm--ROHS3 CompliantLead FreeSurface Mount30mg------SOT-523F150°C-55°CNPN250mW40V600mA100MHz300MHz
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