Fairchild/ON Semiconductor MMBT6427

Name: MMBT6427
Brand: Fairchild/ON Semiconductor
SKU: 2462997-MMBT6427
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MMBT6427

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2462997-MMBT6427

Description:: TRANS NPN DARL 40V 1.2A SOT-23

ECAD Model:

Datasheet:: 2N6427, MMBT6427

Specifications

Fairchild/ON Semiconductor MMBT6427 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBT6427.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 23 hours ago)
Factory Lead Time
39 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
SOT-23-3 (TO-236)
Weight
30mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
40V
Max Power Dissipation
350mW
Current Rating
1.2A
Base Part Number
MMBT6427
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
350mW
Power - Max
350mW
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1.2A
DC Current Gain (hFE) (Min) @ Ic, Vce
14000 @ 500mA 5V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500μA, 500mA
Collector Emitter Breakdown Voltage
40V
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
1.2A
Collector Emitter Saturation Voltage
1.2V
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
12V
hFE Min
20000
Height
930μm
Length
2.92mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

MMBT6427 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 14000 @ 500mA 5V.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 500μA, 500mA.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.2A.There is a breakdown input voltage of 40V volts that it can take.The product comes in the supplier device package of SOT-23-3 (TO-236).A 40V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 1.2A volts at its maximum.

MMBT6427 Features
the DC current gain for this device is 14000 @ 500mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 1.2A
the supplier device package of SOT-23-3 (TO-236)

MMBT6427 Applications
There are a lot of ON Semiconductor
MMBT6427 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MMBT6427 More Descriptions

MMBT Series NPN 350 mW 40 V 1.2 A SMT Darlington Transistor - SOT-23
Small Signal Bipolar Transistor, 1.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
TRANS NPN DARL 40V 0.5A SOT23 / Trans Darlington NPN 40V 1.2A 350mW 3-Pin SOT-23 T/R
MMBT6427,@TRANSISTOR,MMBT6427, 1V,SOT-23 NPN, DL, 40V (10)
NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

Product Comparison

The three parts on the right have similar specifications to MMBT6427.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Number of Elements

Polarity

Element Configuration

Power Dissipation

Power - Max

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

Frequency

Gain Bandwidth Product

Max Frequency

Frequency - Transition

Continuous Collector Current

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Termination

ECCN Code

Terminal Finish

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Polarity/Channel Type

Transition Frequency

Max Junction Temperature (Tj)

Turn On Time-Max (ton)

View Compare
MMBT6427

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 23 hours ago)

39 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SOT-23-3 (TO-236)

30mg

-55°C~150°C TJ

Tape & Reel (TR)

2016

Obsolete

1 (Unlimited)

150°C

-55°C

40V

350mW

1.2A

MMBT6427

1

NPN

Single

350mW

350mW

NPN - Darlington

40V

1.2A

14000 @ 500mA 5V

1μA

1.5V @ 500μA, 500mA

40V

40V

1.2A

1.2V

40V

40V

12V

20000

930μm

2.92mm

1.3mm

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MMBT3904-7-F

Diodes Incorporated

-

15 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SOT-23-3

7.994566mg

-55°C~150°C TJ

Tape & Reel (TR)

2000

Active

1 (Unlimited)

150°C

-55°C

40V

300mW

-

MMBT3904

1

NPN

Single

350mW

300mW

NPN

40V

200mA

100 @ 10mA 1V

50nA ICBO

300mV @ 5mA, 50mA

40V

40V

200mA

300mV

40V

60V

6V

100

1mm

3.05mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

Automotive, AEC-Q101

300MHz

300MHz

300MHz

300MHz

200mA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MMBT6427 vs MMBT3904-7-F
MMBT2907AT-7-F

Diodes Incorporated

-

15 Weeks

-

Surface Mount

Surface Mount

SOT-523

3

-

2.012816mg

-55°C~150°C TJ

Tape & Reel (TR)

2007

Active

1 (Unlimited)

-

-

-60V

150mW

-600mA

MMBT2907A

1

-

Single

150mW

-

PNP

-60V

-600mA

100 @ 150mA 10V

10nA ICBO

1.6V @ 50mA, 500mA

-60V

-

600mA

-1.6V

60V

-60V

-5V

100

900μm

1.6mm

800μm

No SVHC

No

ROHS3 Compliant

Lead Free

Automotive, AEC-Q101

200MHz

200MHz

-

-

-600mA

SILICON

e3

yes

3

SMD/SMT

EAR99

Matte Tin (Sn) - annealed

Other Transistors

DUAL

GULL WING

260

30

3

PNP

200MHz

150°C

45ns

MMBT6427 vs MMBT2907AT-7-F
MMBT2222AT

Fairchild/ON Semiconductor

-

16 Weeks

-

Surface Mount

Surface Mount

SC-89, SOT-490

3

SOT-523F

30mg

150°C TJ

Tape & Reel (TR)

2004

Last Time Buy

1 (Unlimited)

150°C

-55°C

-

250mW

-

MMBT2222

1

NPN

Single

250mW

250mW

NPN

40V

600mA

100 @ 150mA 1V

-

1V @ 50mA, 500mA

40V

40V

600mA

1V

40V

75V

6V

75

780μm

1.7mm

980μm

-

-

ROHS3 Compliant

Lead Free

-

300MHz

300MHz

100MHz

300MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MMBT6427 vs MMBT2222AT