Diodes Incorporated MMBT6427-7
- Part Number:
- MMBT6427-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2846579-MMBT6427-7
- Description:
- TRANS NPN DARL 40V 0.5A SOT23-3
- ECAD Model:
-
- Datasheet:
- MMBT6427-7
Diodes Incorporated MMBT6427-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBT6427-7.
- MountSurface Mount
- Package / CaseSOT-23
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current500mA
- Collector Emitter Breakdown Voltage40V
- Collector Emitter Saturation Voltage1.2V
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)12V
- Continuous Collector Current500mA
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
MMBT6427-7 Overview
The collector emitter saturation voltage is 1.2V, giving you a wide variety of design options.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.An emitter's base voltage can be kept at 12V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 500mA volts.
MMBT6427-7 Features
a collector emitter saturation voltage of 1.2V
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
MMBT6427-7 Applications
There are a lot of Diodes Incorporated
MMBT6427-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The collector emitter saturation voltage is 1.2V, giving you a wide variety of design options.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.An emitter's base voltage can be kept at 12V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 500mA volts.
MMBT6427-7 Features
a collector emitter saturation voltage of 1.2V
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
MMBT6427-7 Applications
There are a lot of Diodes Incorporated
MMBT6427-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT6427-7 More Descriptions
Trans Darlington NPN 40V 0.5A 3-Pin SOT-23 T/R
TRANS NPN DARL 40V 0.5A SOT23-3
TRANS NPN DARL 40V 0.5A SOT23-3
The three parts on the right have similar specifications to MMBT6427-7.
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ImagePart NumberManufacturerMountPackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentRoHS StatusLead FreeFactory Lead TimeMounting TypeSurface MountTransistor Element MaterialOperating TemperatureBase Part NumberJESD-30 CodeConfigurationPower - MaxPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)Contact PlatingSupplier Device PackageWeightSeriesFrequencyGain Bandwidth ProductMax FrequencyhFE MinHeightLengthWidthREACH SVHCRadiation HardeningView Compare
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MMBT6427-7Surface MountSOT-233Tape & Reel (TR)2008e3yesDiscontinued1 (Unlimited)3EAR99Matte Tin (Sn)150°C-55°COther Transistors40V300mWDUALGULL WING260500mA403Not Qualified1NPNSingle300mWSWITCHING40V500mA40V1.2V40V40V12V500mAROHS3 CompliantContains Lead----------------------------------- -
-SOT-523-Tape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)--Other Transistors--DUALGULL WING260-103Not Qualified1---AMPLIFIER--------ROHS3 Compliant-12 WeeksSurface MountYESSILICON-55°C~150°C TJMMBT2222AR-PDSO-G3SINGLE150mWNPNNPN75 @ 10mA 10V100nA1V @ 50mA, 500mA40V600mA300MHz300MHz0.35W285ns35ns-------------
-
Surface MountTO-236-3, SC-59, SOT-23-33Tape & Reel (TR)2000--Active1 (Unlimited)---150°C-55°C-40V300mW-------1NPNSingle350mW-40V200mA40V300mV40V60V6V200mAROHS3 CompliantLead Free15 WeeksSurface Mount---55°C~150°C TJMMBT3904--300mW-NPN100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V200mA-300MHz---TinSOT-23-37.994566mgAutomotive, AEC-Q101300MHz300MHz300MHz1001mm3.05mm1.4mmNo SVHCNo
-
-TO-236-3, SC-59, SOT-23-3-Tape & Reel (TR)---Obsolete1 (Unlimited)-------------------------------Surface Mount---55°C~150°C TJMMBT3904--350mW-NPN100 @ 10mA 1V-300mV @ 5mA, 50mA40V200mA-300MHz----------------
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