MMBT5771

Fairchild/ON Semiconductor MMBT5771

Part Number:
MMBT5771
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3068670-MMBT5771
Description:
TRANS PNP 15V 0.2A SOT-23
ECAD Model:
Datasheet:
MMBT5771

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Specifications
Fairchild/ON Semiconductor MMBT5771 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBT5771.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 1 week ago)
  • Factory Lead Time
    39 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    30mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -15V
  • Max Power Dissipation
    225mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    -200mA
  • Frequency
    8.5MHz
  • Base Part Number
    MMBT5771
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    225mW
  • Turn On Delay Time
    15 ns
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    8.5MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Turn-Off Delay Time
    20 ns
  • Collector Emitter Voltage (VCEO)
    15V
  • Max Collector Current
    200mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 10mA 300mV
  • Current - Collector Cutoff (Max)
    10nA
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
    15V
  • Transition Frequency
    700MHz
  • Collector Emitter Saturation Voltage
    600mV
  • Max Breakdown Voltage
    15V
  • Collector Base Voltage (VCBO)
    -15V
  • Emitter Base Voltage (VEBO)
    -4.5V
  • hFE Min
    50
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBT5771 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 300mV.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -4.5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 700MHz.Single BJT transistor can take a breakdown input voltage of 15V volts.During maximum operation, collector current can be as low as 200mA volts.

MMBT5771 Features
the DC current gain for this device is 50 @ 10mA 300mV
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at -4.5V
the current rating of this device is -200mA
a transition frequency of 700MHz


MMBT5771 Applications
There are a lot of ON Semiconductor
MMBT5771 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBT5771 More Descriptions
MMBT5771 Series 15 V CE Breakdown 0.2 A PNP Switching Transistor - SOT-23
RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP
Trans GP BJT PNP 15V 0.2A 225mW 3-Pin SOT-23 T/R
PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics.
Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation, Pd:0.225W; DC Current Gain Min (hfe):20; Package/Case:SOT-323; C-E Breakdown Voltage:15V; DC Collector Current:0.2A; Leaded Process Compatible:No ;RoHS Compliant: No
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 15V; Transition Frequency ft: -; Power Dissipation Pd: 225mW; DC Collector Current: 200mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 180mV; Continuous Collector Current Ic Max: 200mA; Current Ic Continuous a Max: 200mA; Current Ic hFE: 10mA; Device Marking: BT5771; Gain Bandwidth ft Min: 8.5MHz; Hfe Min: 50; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 225mW; SMD Marking: 3R; Tape Width: 8mm; Turn Off Time: 20ns; Turn On Time: 15ns; Voltage Vcbo: 15V
Product Comparison
The three parts on the right have similar specifications to MMBT5771.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Current Rating
    Frequency
    Base Part Number
    Number of Elements
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Configuration
    Power - Max
    Frequency - Transition
    Turn Off Time-Max (toff)
    Turn On Time-Max (ton)
    Surface Mount
    Pin Count
    Qualification Status
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Power Dissipation-Max (Abs)
    Contact Plating
    Series
    Continuous Collector Current
    Height
    Length
    Width
    View Compare
  • MMBT5771
    MMBT5771
    LAST SHIPMENTS (Last Updated: 1 week ago)
    39 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    -15V
    225mW
    DUAL
    GULL WING
    -200mA
    8.5MHz
    MMBT5771
    1
    Single
    225mW
    15 ns
    SWITCHING
    8.5MHz
    PNP
    PNP
    20 ns
    15V
    200mA
    50 @ 10mA 300mV
    10nA
    600mV @ 5mA, 50mA
    15V
    700MHz
    600mV
    15V
    -15V
    -4.5V
    50
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT2222A-G
    -
    10 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e3
    -
    Active
    1 (Unlimited)
    3
    -
    Tin (Sn)
    Other Transistors
    -
    225mW
    DUAL
    GULL WING
    -
    -
    -
    1
    -
    -
    -
    SWITCHING
    -
    NPN
    NPN
    -
    1V
    600mA
    100 @ 150mA 10mV
    10nA
    1V @ 50mA, 500mA
    40V
    300MHz
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G3
    SINGLE
    300mW
    300MHz
    285ns
    35ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT2222AT-TP
    -
    12 Weeks
    -
    Surface Mount
    SOT-523
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    -
    -
    DUAL
    GULL WING
    -
    -
    MMBT2222A
    1
    -
    -
    -
    AMPLIFIER
    -
    NPN
    NPN
    -
    -
    -
    75 @ 10mA 10V
    100nA
    1V @ 50mA, 500mA
    -
    300MHz
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    260
    10
    R-PDSO-G3
    SINGLE
    150mW
    300MHz
    285ns
    35ns
    YES
    3
    Not Qualified
    40V
    600mA
    0.35W
    -
    -
    -
    -
    -
    -
  • MMBT3904T-7-F
    -
    15 Weeks
    Surface Mount
    Surface Mount
    SOT-523
    3
    2.012816mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Other Transistors
    40V
    150mW
    DUAL
    GULL WING
    200mA
    300MHz
    MMBT3904
    1
    Single
    150mW
    -
    -
    300MHz
    NPN
    NPN
    -
    40V
    200mA
    100 @ 10mA 1V
    -
    300mV @ 5mA, 50mA
    40V
    300MHz
    300mV
    40V
    60V
    6V
    100
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    260
    40
    -
    -
    -
    -
    250ns
    70ns
    -
    3
    -
    -
    -
    -
    Tin
    Automotive, AEC-Q101
    200mA
    750μm
    1.6mm
    800μm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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