Fairchild/ON Semiconductor MMBT5771
- Part Number:
- MMBT5771
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3068670-MMBT5771
- Description:
- TRANS PNP 15V 0.2A SOT-23
- Datasheet:
- MMBT5771
Fairchild/ON Semiconductor MMBT5771 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBT5771.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Factory Lead Time39 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight30mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-15V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-200mA
- Frequency8.5MHz
- Base Part NumberMMBT5771
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation225mW
- Turn On Delay Time15 ns
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product8.5MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Turn-Off Delay Time20 ns
- Collector Emitter Voltage (VCEO)15V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA 300mV
- Current - Collector Cutoff (Max)10nA
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage15V
- Transition Frequency700MHz
- Collector Emitter Saturation Voltage600mV
- Max Breakdown Voltage15V
- Collector Base Voltage (VCBO)-15V
- Emitter Base Voltage (VEBO)-4.5V
- hFE Min50
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT5771 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 300mV.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -4.5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 700MHz.Single BJT transistor can take a breakdown input voltage of 15V volts.During maximum operation, collector current can be as low as 200mA volts.
MMBT5771 Features
the DC current gain for this device is 50 @ 10mA 300mV
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at -4.5V
the current rating of this device is -200mA
a transition frequency of 700MHz
MMBT5771 Applications
There are a lot of ON Semiconductor
MMBT5771 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 300mV.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -4.5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 700MHz.Single BJT transistor can take a breakdown input voltage of 15V volts.During maximum operation, collector current can be as low as 200mA volts.
MMBT5771 Features
the DC current gain for this device is 50 @ 10mA 300mV
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at -4.5V
the current rating of this device is -200mA
a transition frequency of 700MHz
MMBT5771 Applications
There are a lot of ON Semiconductor
MMBT5771 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT5771 More Descriptions
MMBT5771 Series 15 V CE Breakdown 0.2 A PNP Switching Transistor - SOT-23
RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP
Trans GP BJT PNP 15V 0.2A 225mW 3-Pin SOT-23 T/R
PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics.
Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation, Pd:0.225W; DC Current Gain Min (hfe):20; Package/Case:SOT-323; C-E Breakdown Voltage:15V; DC Collector Current:0.2A; Leaded Process Compatible:No ;RoHS Compliant: No
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 15V; Transition Frequency ft: -; Power Dissipation Pd: 225mW; DC Collector Current: 200mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 180mV; Continuous Collector Current Ic Max: 200mA; Current Ic Continuous a Max: 200mA; Current Ic hFE: 10mA; Device Marking: BT5771; Gain Bandwidth ft Min: 8.5MHz; Hfe Min: 50; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 225mW; SMD Marking: 3R; Tape Width: 8mm; Turn Off Time: 20ns; Turn On Time: 15ns; Voltage Vcbo: 15V
RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, PNP
Trans GP BJT PNP 15V 0.2A 225mW 3-Pin SOT-23 T/R
PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics.
Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation, Pd:0.225W; DC Current Gain Min (hfe):20; Package/Case:SOT-323; C-E Breakdown Voltage:15V; DC Collector Current:0.2A; Leaded Process Compatible:No ;RoHS Compliant: No
TRANSISTOR, PNP, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 15V; Transition Frequency ft: -; Power Dissipation Pd: 225mW; DC Collector Current: 200mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 180mV; Continuous Collector Current Ic Max: 200mA; Current Ic Continuous a Max: 200mA; Current Ic hFE: 10mA; Device Marking: BT5771; Gain Bandwidth ft Min: 8.5MHz; Hfe Min: 50; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 225mW; SMD Marking: 3R; Tape Width: 8mm; Turn Off Time: 20ns; Turn On Time: 15ns; Voltage Vcbo: 15V
The three parts on the right have similar specifications to MMBT5771.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTurn On Delay TimeTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinREACH SVHCRadiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeConfigurationPower - MaxFrequency - TransitionTurn Off Time-Max (toff)Turn On Time-Max (ton)Surface MountPin CountQualification StatusVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Contact PlatingSeriesContinuous Collector CurrentHeightLengthWidthView Compare
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MMBT5771LAST SHIPMENTS (Last Updated: 1 week ago)39 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3330mgSILICON-55°C~150°C TJTape & Reel (TR)2014e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors-15V225mWDUALGULL WING-200mA8.5MHzMMBT57711Single225mW15 nsSWITCHING8.5MHzPNPPNP20 ns15V200mA50 @ 10mA 300mV10nA600mV @ 5mA, 50mA15V700MHz600mV15V-15V-4.5V50No SVHCNoROHS3 CompliantLead Free---------------------
-
-10 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2011e3-Active1 (Unlimited)3-Tin (Sn)Other Transistors-225mWDUALGULL WING---1---SWITCHING-NPNNPN-1V600mA100 @ 150mA 10mV10nA1V @ 50mA, 500mA40V300MHz-------ROHS3 Compliant-NOT SPECIFIEDNOT SPECIFIEDR-PDSO-G3SINGLE300mW300MHz285ns35ns------------
-
-12 Weeks-Surface MountSOT-523--SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors--DUALGULL WING--MMBT2222A1---AMPLIFIER-NPNNPN---75 @ 10mA 10V100nA1V @ 50mA, 500mA-300MHz-------ROHS3 Compliant-26010R-PDSO-G3SINGLE150mW300MHz285ns35nsYES3Not Qualified40V600mA0.35W------
-
-15 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99-Other Transistors40V150mWDUALGULL WING200mA300MHzMMBT39041Single150mW--300MHzNPNNPN-40V200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V300MHz300mV40V60V6V100No SVHCNoROHS3 CompliantLead Free26040----250ns70ns-3----TinAutomotive, AEC-Q101200mA750μm1.6mm800μm
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