ON Semiconductor MMBT5551LT3G
- Part Number:
- MMBT5551LT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463362-MMBT5551LT3G
- Description:
- TRANS NPN 160V 0.6A SOT-23
- ECAD Model:
-
- Datasheet:
- MMBT5551LT3G
ON Semiconductor MMBT5551LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT5551LT3G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Voltage - Rated DC160V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating600mA
- Base Part NumberMMBT5551
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeN-CHANNEL
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)160V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage160V
- Collector Emitter Saturation Voltage150mV
- Max Breakdown Voltage160V
- Collector Base Voltage (VCBO)180V
- Emitter Base Voltage (VEBO)6V
- hFE Min80
- VCEsat-Max0.2 V
- Height1.11mm
- Length3.04mm
- Width2.64mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT5551LT3G Description
The MMBT5551LT3G is a High Voltage Transistor with NPN Silicon. A transistor is a tiny semiconductor that regulates or controls the flow of current or voltage in addition to generating, amplifying, and functioning as a switch or gate for these electrical signals. Three layers, or terminals, of semiconductor material, typically make up transistors. Each of these layers is capable of carrying a current.
MMBT5551LT3G Features
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
High voltage
High current
Good switching characteristics
MMBT5551LT3G Applications
As a switch
As an amplifier
Amplifying
Controlling
Generating electrical signals
The MMBT5551LT3G is a High Voltage Transistor with NPN Silicon. A transistor is a tiny semiconductor that regulates or controls the flow of current or voltage in addition to generating, amplifying, and functioning as a switch or gate for these electrical signals. Three layers, or terminals, of semiconductor material, typically make up transistors. Each of these layers is capable of carrying a current.
MMBT5551LT3G Features
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
High voltage
High current
Good switching characteristics
MMBT5551LT3G Applications
As a switch
As an amplifier
Amplifying
Controlling
Generating electrical signals
MMBT5551LT3G More Descriptions
ON Semi MMBT5551LT3G NPN Bipolar Transistor; 0.6 A; 160 V; 3-Pin SOT-23
Transistor GP BJT NPN 160V 0.06A 3-Pin SOT-23 T/R - Tape and Reel
MMBT5551 Series NPN 160 V 0.6 A SMT High Voltage Silicon Transistor - SOT-23
Small Signal Bipolar Transistor, 0.06A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
High Voltage NPN Bipolar Transistor
Transistor Polarity:Npn; Collector Emitter Voltage Max:160V; Continuous Collector Current:600Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:-; Dc Current Gain Hfe Min:80Hfe Rohs Compliant: Yes |Onsemi MMBT5551LT3G.
Transistor GP BJT NPN 160V 0.06A 3-Pin SOT-23 T/R - Tape and Reel
MMBT5551 Series NPN 160 V 0.6 A SMT High Voltage Silicon Transistor - SOT-23
Small Signal Bipolar Transistor, 0.06A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
High Voltage NPN Bipolar Transistor
Transistor Polarity:Npn; Collector Emitter Voltage Max:160V; Continuous Collector Current:600Ma; Power Dissipation:225Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:-; Dc Current Gain Hfe Min:80Hfe Rohs Compliant: Yes |Onsemi MMBT5551LT3G.
The three parts on the right have similar specifications to MMBT5551LT3G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormCurrent RatingBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinVCEsat-MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeMountWeightSeriesPeak Reflow Temperature (Cel)Reach Compliance CodeFrequencyTime@Peak Reflow Temperature-Max (s)Qualification StatusGain Bandwidth ProductTransition FrequencyContinuous Collector CurrentREACH SVHCTerminationSubcategoryCurrent - Collector (Ic) (Max)Max Junction Temperature (Tj)Turn On Time-Max (ton)Power - MaxVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionView Compare
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MMBT5551LT3GACTIVE (Last Updated: 4 days ago)4 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Tin (Sn)160V225mWDUALGULL WING600mAMMBT555131Single300mWSWITCHINGN-CHANNELNPN160V600mA80 @ 10mA 5V100nA200mV @ 5mA, 50mA160V150mV160V180V6V800.2 V1.11mm3.04mm2.64mmNoROHS3 CompliantLead Free--------------------- -
--Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2005e0-Obsolete1 (Unlimited)3EAR99-25V300mWDUALGULL WING200mAMMBT412431Single300mWSWITCHINGNPNNPN25V200mA120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA25V-25V30V5V120-1mm3.05mm1.4mm-Non-RoHS CompliantContains LeadSurface Mount7.994566mgAutomotive, AEC-Q101235not_compliant300MHz10Not Qualified300MHz300MHz200mANo SVHC--------
-
-15 WeeksSurface MountSOT-523-3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-60V150mWDUALGULL WING-600mAMMBT2907A31Single150mW-PNPPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V-1.6V60V-60V-5V100-900μm1.6mm800μmNoROHS3 CompliantLead FreeSurface Mount2.012816mgAutomotive, AEC-Q101260-200MHz30-200MHz200MHz-600mANo SVHCSMD/SMTOther Transistors600mA150°C45ns---
-
--Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)--------MMBT3904------NPN--100 @ 10mA 1V-300mV @ 5mA, 50mA---------------------------200mA--350mW40V300MHz
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