Fairchild/ON Semiconductor MMBT5551
- Part Number:
- MMBT5551
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2845358-MMBT5551
- Description:
- TRANS NPN 160V 0.6A SOT-23
- Datasheet:
- 2N5551, MMBT5551 MMBT5551 MMBT555x
Fairchild/ON Semiconductor MMBT5551 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBT5551.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max350mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA 5V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)160V
- Current - Collector (Ic) (Max)600mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- RoHS StatusROHS3 Compliant
MMBT5551 Overview
In this device, the DC current gain is 80 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 5mA, 50mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 160V maximal voltage in the device due to collector-emitter breakdown.
MMBT5551 Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz
MMBT5551 Applications
There are a lot of Rochester Electronics, LLC
MMBT5551 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 80 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 5mA, 50mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 160V maximal voltage in the device due to collector-emitter breakdown.
MMBT5551 Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz
MMBT5551 Applications
There are a lot of Rochester Electronics, LLC
MMBT5551 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT5551 More Descriptions
600 mA, 160 V NPN General Purpose Bipolar Junction Transistor Legacy Fairchild Part number
Trans General Purpose BJT NPN 160 Volt 0.6A 3-Pin SOT-23 Tape and Reel
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 80 @ 10mA 5V 600mA 350mW 300MHz
Trans GP BJT NPN 160V 0.6A 350mW 3-Pin SOT-23 T/R / TRANS NPN 160V 0.6A SOT-23
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
MMBT5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - SOT-23
Bipolar Transistors - BJT SOT-23 NPN GEN PUR
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):80; Package/Case:SOT-323; C-E Breakdown Voltage:160V; DC Collector Current:0.6A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR,NPN,160V,0.6A,SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:350mW; DC Collector Current:600mA; DC Current Gain hFE:250; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:600mA; Current Ic hFE:250mA; DC Current Gain Max (hfe):250; Gain Bandwidth ft Typ:300MHz; Hfe Min:80; Noise Figure Typ:8dB; Package / Case:SOT23; Power Dissipation Ptot Max:350mW; RF Transistor Case:SOT-23; Termination Type:SMD; Test Frequency:15.7kHz
Trans General Purpose BJT NPN 160 Volt 0.6A 3-Pin SOT-23 Tape and Reel
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 80 @ 10mA 5V 600mA 350mW 300MHz
Trans GP BJT NPN 160V 0.6A 350mW 3-Pin SOT-23 T/R / TRANS NPN 160V 0.6A SOT-23
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
MMBT5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - SOT-23
Bipolar Transistors - BJT SOT-23 NPN GEN PUR
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):80; Package/Case:SOT-323; C-E Breakdown Voltage:160V; DC Collector Current:0.6A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR,NPN,160V,0.6A,SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:350mW; DC Collector Current:600mA; DC Current Gain hFE:250; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:600mA; Current Ic hFE:250mA; DC Current Gain Max (hfe):250; Gain Bandwidth ft Typ:300MHz; Hfe Min:80; Noise Figure Typ:8dB; Package / Case:SOT23; Power Dissipation Ptot Max:350mW; RF Transistor Case:SOT-23; Termination Type:SMD; Test Frequency:15.7kHz
The three parts on the right have similar specifications to MMBT5551.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusMountNumber of PinsWeightSeriesPublishedECCN CodeVoltage - Rated DCMax Power DissipationReach Compliance CodeCurrent RatingFrequencyBase Part NumberElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCLead FreeFactory Lead TimeTerminationSubcategoryCollector Emitter Saturation VoltageMax Junction Temperature (Tj)Turn On Time-Max (ton)Radiation HardeningView Compare
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MMBT5551Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON-55°C~150°C TJTape & Reel (TR)e3yesObsolete1 (Unlimited)3MATTE TINDUALGULL WING260403R-PDSO-G3COMMERCIAL1SINGLE350mWAMPLIFIERNPNNPN80 @ 10mA 5V50nA ICBO200mV @ 5mA, 50mA160V600mA100MHz100MHzROHS3 Compliant------------------------------------
-
Surface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)e0-Obsolete1 (Unlimited)3-DUALGULL WING235103-Not Qualified1--SWITCHINGNPNNPN120 @ 2mA 1V50nA ICBO300mV @ 5mA, 50mA--300MHz-Non-RoHS CompliantSurface Mount37.994566mgAutomotive, AEC-Q1012005EAR9925V300mWnot_compliant200mA300MHzMMBT4124Single300mW300MHz25V200mA25V25V30V5V120200mA1mm3.05mm1.4mmNo SVHCContains Lead-------
-
Surface MountSOT-523-SILICON-55°C~150°C TJTape & Reel (TR)e3yesActive1 (Unlimited)3Matte Tin (Sn) - annealedDUALGULL WING260303--1---PNPPNP100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-600mA200MHz-ROHS3 CompliantSurface Mount32.012816mgAutomotive, AEC-Q1012007EAR99-60V150mW--600mA200MHzMMBT2907ASingle150mW200MHz-60V-600mA-60V60V-60V-5V100-600mA900μm1.6mm800μmNo SVHCLead Free15 WeeksSMD/SMTOther Transistors-1.6V150°C45nsNo
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Surface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)-----------350mW--NPN100 @ 10mA 1V-300mV @ 5mA, 50mA40V200mA-300MHz------------MMBT3904-----------------------
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