Fairchild/ON Semiconductor MMBT5401
- Part Number:
- MMBT5401
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2462948-MMBT5401
- Description:
- TRANS PNP 150V 0.6A SOT-23
- Datasheet:
- MMBT5401 MMBT5401 Datasheet MMBT5401 MMBT5401
Fairchild/ON Semiconductor MMBT5401 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MMBT5401.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
- Factory Lead Time31 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Supplier Device PackageSOT-23-3
- Weight59.987591mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-150V
- Max Power Dissipation350mW
- Current Rating-600mA
- Frequency300MHz
- Base Part NumberMMBT5401
- Number of Elements1
- PolarityPNP
- Voltage150V
- Element ConfigurationSingle
- Current2A
- Power Dissipation350mW
- Power - Max350mW
- Gain Bandwidth Product300MHz
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)-150V
- Max Collector Current-600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA 5V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage150V
- Voltage - Collector Emitter Breakdown (Max)150V
- Current - Collector (Ic) (Max)600mA
- Max Frequency300MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage150V
- Frequency - Transition300MHz
- Collector Base Voltage (VCBO)-160V
- Emitter Base Voltage (VEBO)-5V
- hFE Min60
- Max Junction Temperature (Tj)150°C
- Height1.2mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MMBT5401 Description
MMBT5401 is a type of PNP epitaxial silicon transistor manufactured by ON Semiconductor for current amplification and switching. It is designed as a general-purpose amplifier and switch for applications where high voltage is required.
MMBT5401 Features
PNP general-purpose amplifier
Silicon epitaxial planar NPN transistor
Available in the SOT-23 package
MMBT5401 Applications
Portable equipment
Small load switch transistor with high gain and low saturation voltage
MMBT5401 is a type of PNP epitaxial silicon transistor manufactured by ON Semiconductor for current amplification and switching. It is designed as a general-purpose amplifier and switch for applications where high voltage is required.
MMBT5401 Features
PNP general-purpose amplifier
Silicon epitaxial planar NPN transistor
Available in the SOT-23 package
MMBT5401 Applications
Portable equipment
Small load switch transistor with high gain and low saturation voltage
MMBT5401 More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
PNP 600mA 150V 250mW SOT-23(SOT-23-3) Transistors (NPN/PNP) RoHS
BJT, SOT-23, 150V, 600mA, PNP, 150°C
Trans GP BJT PNP 150V 0.6A 250mW 3-Pin SOT-23 T/R
50nA 150V 250mW 600mA 60@10mA,1V 100MHz 500mV@50mA,5mA PNP -65¡æ~ 150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 600 / DC Current Gain (hFE) = 240 / Collector-Base Voltage (Vcbo) V = 160 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1 / Reflow Temperature Max. °C = 260
PNP 600mA 150V 250mW SOT-23(SOT-23-3) Transistors (NPN/PNP) RoHS
BJT, SOT-23, 150V, 600mA, PNP, 150°C
Trans GP BJT PNP 150V 0.6A 250mW 3-Pin SOT-23 T/R
50nA 150V 250mW 600mA 60@10mA,1V 100MHz 500mV@50mA,5mA PNP -65¡æ~ 150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 600 / DC Current Gain (hFE) = 240 / Collector-Base Voltage (Vcbo) V = 160 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) mW = 250 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 500 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1 / Reflow Temperature Max. °C = 260
The three parts on the right have similar specifications to MMBT5401.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsPolarityVoltageElement ConfigurationCurrentPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyPower Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)SeriesTerminationContinuous Collector CurrentView Compare
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MMBT5401LAST SHIPMENTS (Last Updated: 1 day ago)31 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SOT-23-359.987591mg-55°C~150°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)150°C-55°C-150V350mW-600mA300MHzMMBT54011PNP150VSingle2A350mW350mW300MHzPNP-150V-600mA60 @ 10mA 5V50nA ICBO500mV @ 5mA, 50mA150V150V600mA300MHz-500mV150V300MHz-160V-5V60150°C1.2mm2.9mm1.3mmNo SVHCNoRoHS CompliantLead Free--------------------------
-
-12 Weeks--Surface MountSOT-523----55°C~150°C TJTape & Reel (TR)2005Active1 (Unlimited)------MMBT2222A1-----150mW-NPN--75 @ 10mA 10V100nA1V @ 50mA, 500mA-40V600mA---300MHz---------ROHS3 Compliant-YESSILICONe3yes3EAR99Matte Tin (Sn)Other TransistorsDUALGULL WING260103R-PDSO-G3Not QualifiedSINGLEAMPLIFIERNPN300MHz0.35W285ns35ns---
-
-15 Weeks-Surface MountSurface MountSOT-5233-2.012816mg-55°C~150°C TJTape & Reel (TR)2007Active1 (Unlimited)---60V150mW-600mA200MHzMMBT2907A1--Single-150mW-200MHzPNP-60V-600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA-60V-600mA--1.6V60V--60V-5V100150°C900μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free-SILICONe3yes3EAR99Matte Tin (Sn) - annealedOther TransistorsDUALGULL WING260303----PNP200MHz--45nsAutomotive, AEC-Q101SMD/SMT-600mA
-
-16 Weeks-Surface MountSurface MountSC-89, SOT-4903SOT-523F30mg150°C TJTape & Reel (TR)2004Last Time Buy1 (Unlimited)150°C-55°C-250mW-300MHzMMBT22221NPN-Single-250mW250mW300MHzNPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V40V600mA100MHz1V40V300MHz75V6V75-780μm1.7mm980μm--ROHS3 CompliantLead Free-------------------------
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