Comchip Technology MMBT5401-G
- Part Number:
- MMBT5401-G
- Manufacturer:
- Comchip Technology
- Ventron No:
- 2846002-MMBT5401-G
- Description:
- TRANS PNP 150V 0.6A SOT-23
- ECAD Model:
-
- Datasheet:
- MMBT5401-G
Comchip Technology MMBT5401-G technical specifications, attributes, parameters and parts with similar specifications to Comchip Technology MMBT5401-G.
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Weight200.998119mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- SubcategoryOther Transistors
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G3
- Number of Elements1
- Element ConfigurationSingle
- Power - Max300mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage150V
- Transition Frequency100MHz
- Frequency - Transition100MHz
- Emitter Base Voltage (VEBO)-5V
- hFE Min80
- Continuous Collector Current-600mA
- RoHS StatusROHS3 Compliant
MMBT5401-G Overview
This device has a DC current gain of 100 @ 10mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -600mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 600mA volts is possible.
MMBT5401-G Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
MMBT5401-G Applications
There are a lot of Comchip Technology
MMBT5401-G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 10mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -600mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 600mA volts is possible.
MMBT5401-G Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
MMBT5401-G Applications
There are a lot of Comchip Technology
MMBT5401-G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT5401-G More Descriptions
Trans GP BJT PNP 150V 0.6A 3-Pin SOT-23 T/R
RF Bipolar Transistors VCEO=-150V IC=-600mA
RF Bipolar Transistors VCEO=-150V IC=-600mA
The three parts on the right have similar specifications to MMBT5401-G.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsElement ConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentRoHS StatusContact PlatingNumber of PinsSeriesJESD-609 CodePbfree CodeECCN CodeVoltage - Rated DCCurrent RatingFrequencyBase Part NumberPin CountPower DissipationGain Bandwidth ProductCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Turn Off Time-Max (toff)Turn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningLead FreeTerminal FinishSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyView Compare
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MMBT5401-G10 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3200.998119mgSILICON-55°C~150°C TJTape & Reel (TR)2011Active1 (Unlimited)3Other Transistors300mWDUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G31Single300mWSWITCHINGPNPPNP500mV600mA100 @ 10mA 5V100nA ICBO500mV @ 5mA, 50mA150V100MHz100MHz-5V80-600mAROHS3 Compliant--------------------------------- -
15 WeeksSurface MountSurface MountSOT-5232.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2007Active1 (Unlimited)3Other Transistors150mWDUALGULL WING26040-1Single--NPNNPN40V200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V300MHz-6V100200mAROHS3 CompliantTin3Automotive, AEC-Q101e3yesEAR9940V200mA300MHzMMBT39043150mW300MHz300mV40V60V250ns70ns750μm1.6mm800μmNo SVHCNoLead Free--------
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2008Active1 (Unlimited)3Other Transistors300mWDUALGULL WING26040-1Single-SWITCHINGPNPPNP25V200mA120 @ 2mA 1V50nA ICBO400mV @ 5mA, 50mA25V250MHz--4V120-200mAROHS3 Compliant-3Automotive, AEC-Q101e3yesEAR99-25V-200mA250MHzMMBT41263300mW250MHz-400mV25V25V--1mm3.05mm1.4mmNo SVHCNoLead FreeMatte Tin (Sn)-------
-
16 WeeksSurface MountSurface MountSC-89, SOT-49030mg-150°C TJTape & Reel (TR)2004Last Time Buy1 (Unlimited)--250mW-----1Single250mW--NPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V-300MHz6V75-ROHS3 Compliant-3------300MHzMMBT2222-250mW300MHz1V40V75V--780μm1.7mm980μm--Lead Free-SOT-523F150°C-55°CNPN40V600mA100MHz
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