Diodes Incorporated MMBT4403T-7-F
- Part Number:
- MMBT4403T-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845881-MMBT4403T-7-F
- Description:
- TRANS PNP 40V 0.6A SOT523
- Datasheet:
- MMBT4403T-7-F
Diodes Incorporated MMBT4403T-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBT4403T-7-F.
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-523
- Number of Pins3
- Weight2.012816mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-600mA
- Frequency200MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT4403
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation150mW
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 2V
- Vce Saturation (Max) @ Ib, Ic750mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage-750mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)-5V
- hFE Min100
- Continuous Collector Current-600mA
- Turn Off Time-Max (toff)255ns
- Height750μm
- Length1.6mm
- Width800μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT4403T-7-F Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.With a collector emitter saturation voltage of -750mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -600mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -600mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
MMBT4403T-7-F Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMBT4403T-7-F Applications
There are a lot of Diodes Incorporated
MMBT4403T-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.With a collector emitter saturation voltage of -750mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -600mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -600mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
MMBT4403T-7-F Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMBT4403T-7-F Applications
There are a lot of Diodes Incorporated
MMBT4403T-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT4403T-7-F More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
MMBT4403T Series 40 V 600 mA 150 mW PNP Small Signal Transistor -SOT-523
40V 150mW 100@150mA,2V 600mA PNP SOT-523-3 Bipolar Transistors - BJT ROHS
PNP Small Signal Transistor SOT-523 | Diodes Inc MMBT4403T-7-F
MMBT4403T Series 40 V 600 mA 150 mW PNP Small Signal Transistor -SOT-523
40V 150mW 100@150mA,2V 600mA PNP SOT-523-3 Bipolar Transistors - BJT ROHS
PNP Small Signal Transistor SOT-523 | Diodes Inc MMBT4403T-7-F
The three parts on the right have similar specifications to MMBT4403T-7-F.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentTurn Off Time-Max (toff)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-30 CodeConfigurationPower - MaxTransistor ApplicationCurrent - Collector Cutoff (Max)Frequency - TransitionTurn On Time-Max (ton)Contact PlatingVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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MMBT4403T-7-F19 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors-40V150mWDUALGULL WING260-600mA200MHz40MMBT440331Single150mW200MHzPNPPNP40V600mA100 @ 150mA 2V750mV @ 50mA, 500mA40V200MHz-750mV40V40V-5V100-600mA255ns750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free-----------
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10 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)-2011e3-Active1 (Unlimited)3-Tin (Sn)Other Transistors-225mWDUALGULL WINGNOT SPECIFIED--NOT SPECIFIED--1---NPNNPN1V600mA100 @ 150mA 10mV1V @ 50mA, 500mA40V300MHz------285ns-----ROHS3 Compliant-R-PDSO-G3SINGLE300mWSWITCHING10nA300MHz35ns---
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15 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007e3yesActive1 (Unlimited)3EAR99-Other Transistors40V150mWDUALGULL WING260200mA300MHz40MMBT390431Single150mW300MHzNPNNPN40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V300MHz300mV40V60V6V100200mA250ns750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free------70nsTin--
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--Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)----Obsolete1 (Unlimited)------------MMBT3904------NPN--100 @ 10mA 1V300mV @ 5mA, 50mA------------------350mW--300MHz--40V200mA
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