ON Semiconductor MMBT4401LT1G
- Part Number:
- MMBT4401LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2462838-MMBT4401LT1G
- Description:
- TRANS NPN 40V 0.6A SOT23
- Datasheet:
- MMBT4401LT1G
ON Semiconductor MMBT4401LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT4401LT1G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating600mA
- Frequency250MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT4401
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation225mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product250MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 1V
- Vce Saturation (Max) @ Ib, Ic750mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency250MHz
- Collector Emitter Saturation Voltage400mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- hFE Min20
- Max Junction Temperature (Tj)150°C
- Turn On Time-Max (ton)255ns
- Height1.11mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT4401LT1G Description
The MMBT4401LT1G is a 40V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The MMBT4401LT1G transistor can be used in low-power surface mount applications.
MMBT4401LT1G Features Halogen-free/BFR-free
AEC-Q101 Qualified and PPAP capable
60VDC Collector to base voltage (VCBO)
6VDC Emitter to base voltage (VEBO)
900mADC Peak collector current
556°C/W Thermal resistance, junction to ambient
MMBT4401LT1G Applications Industrial
Power Management
Drive modules, such as LED drive, relay drive, etc.
Amplifier modules, such as signal amplifiers, audio amplifiers, etc.
Motor speed control
Inverter and Rectifier circuits
Darlington Pair Designs
MMBT4401LT1G Features Halogen-free/BFR-free
AEC-Q101 Qualified and PPAP capable
60VDC Collector to base voltage (VCBO)
6VDC Emitter to base voltage (VEBO)
900mADC Peak collector current
556°C/W Thermal resistance, junction to ambient
MMBT4401LT1G Applications Industrial
Power Management
Drive modules, such as LED drive, relay drive, etc.
Amplifier modules, such as signal amplifiers, audio amplifiers, etc.
Motor speed control
Inverter and Rectifier circuits
Darlington Pair Designs
MMBT4401LT1G More Descriptions
Transistor, Bipolar, Si, NPN, Switching, VCEO 40VDC, IC 600mA, PD 225mW, SOT-23, hFE 40
Trans General Purpose BJT NPN 40 Volt 0.6A 3-Pin SOT-23 Tape and Reel
TRANS NPN 40V 0.6A SOT23 / Trans GP BJT NPN 40V 0.6A 300mW 3-Pin SOT-23 T/R
40V 300mW 100@150mA,1V 600mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
MMBT Series 40 V 600 mA Surface Mount NPN Silicon Switching Transistor - SOT-23
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
40 V, 600 mA NPN Bipolar Junction Transistor
TRANSISTOR, NPN, 40V, 600MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 225mW; DC Collector Current: 600mA; DC Current Gain hFE: 20hFE; T
Bipolar Transistor, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:250Mhzrohs Compliant: Yes |Onsemi MMBT4401LT1G.
Trans General Purpose BJT NPN 40 Volt 0.6A 3-Pin SOT-23 Tape and Reel
TRANS NPN 40V 0.6A SOT23 / Trans GP BJT NPN 40V 0.6A 300mW 3-Pin SOT-23 T/R
40V 300mW 100@150mA,1V 600mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
MMBT Series 40 V 600 mA Surface Mount NPN Silicon Switching Transistor - SOT-23
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
40 V, 600 mA NPN Bipolar Junction Transistor
TRANSISTOR, NPN, 40V, 600MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 225mW; DC Collector Current: 600mA; DC Current Gain hFE: 20hFE; T
Bipolar Transistor, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:250Mhzrohs Compliant: Yes |Onsemi MMBT4401LT1G.
The three parts on the right have similar specifications to MMBT4401LT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)Turn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountSupplier Device PackageSeriesMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxCurrent - Collector Cutoff (Max)Voltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyFrequency - TransitionContinuous Collector CurrentView Compare
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MMBT4401LT1GACTIVE (Last Updated: 1 day ago)10 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES34.535924gSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Other Transistors40V300mWDUALGULL WING260600mA250MHz40MMBT440131Single225mWSWITCHING250MHzNPNNPN40V600mA100 @ 150mA 1V750mV @ 50mA, 500mA40V250MHz400mV40V60V6V20150°C255ns1.11mm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free--------------
-
-15 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3-37.994566mg--55°C~150°C TJTape & Reel (TR)2000--Active1 (Unlimited)---40V300mW----300MHz-MMBT3904-1Single350mW-300MHz-NPN40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V-300mV40V60V6V100--1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeSurface MountSOT-23-3Automotive, AEC-Q101150°C-55°CNPN300mW50nA ICBO40V200mA300MHz300MHz200mA
-
---Surface MountTO-236-3, SC-59, SOT-23-3-----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----------MMBT3904-------NPN--100 @ 10mA 1V300mV @ 5mA, 50mA----------------------350mW-40V200mA-300MHz-
-
-16 Weeks-Surface MountSC-89, SOT-490-330mg-150°C TJTape & Reel (TR)2004--Last Time Buy1 (Unlimited)----250mW----300MHz-MMBT2222-1Single250mW-300MHz-NPN40V600mA100 @ 150mA 1V1V @ 50mA, 500mA40V-1V40V75V6V75--780μm1.7mm980μm--ROHS3 CompliantLead FreeSurface MountSOT-523F-150°C-55°CNPN250mW-40V600mA100MHz300MHz-
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