MMBT3906TT1G

ON Semiconductor MMBT3906TT1G

Part Number:
MMBT3906TT1G
Manufacturer:
ON Semiconductor
Ventron No:
2463104-MMBT3906TT1G
Description:
TRANS PNP 40V 0.2A SC75-3
ECAD Model:
Datasheet:
MMBT3906TT1G

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Specifications
ON Semiconductor MMBT3906TT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT3906TT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 17 hours ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-75, SOT-416
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -40V
  • Max Power Dissipation
    200mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -200mA
  • Frequency
    250MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MMBT3906
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    300mW
  • Power - Max
    200mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    250MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    40V
  • Max Collector Current
    200mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 10mA 1V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
    40V
  • Transition Frequency
    250MHz
  • Collector Emitter Saturation Voltage
    -400mV
  • Max Breakdown Voltage
    40V
  • Collector Base Voltage (VCBO)
    40V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    60
  • Turn On Time-Max (ton)
    70ns
  • Height
    800μm
  • Length
    1.65mm
  • Width
    900μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MMBT3906TT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.The collector emitter saturation voltage is -400mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -200mA.In the part, the transition frequency is 250MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.

MMBT3906TT1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 250MHz


MMBT3906TT1G Applications
There are a lot of ON Semiconductor
MMBT3906TT1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MMBT3906TT1G More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
MMBT Series 40 V 200 mA SMT PNP Silicon General Purpose Transistor - SOT-416
ON Semi MMBT3906TT1G PNP Bipolar Transistor, 0.2 A, 40 V, 3-Pin SOT-416 | ON Semiconductor MMBT3906TT1G
This tranisistor is designed for general purpose amplifier applications. It is housed in the SOT-416/SC-75 package which is designed for low power applications.
Bipolar Transistor, Pnp, -40V, Sot-416; Transistor Polarity:Pnp; Collector Emitter Voltage Max:40V; Continuous Collector Current:200Ma; Power Dissipation:200Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MMBT3906TT1G.
Product Comparison
The three parts on the right have similar specifications to MMBT3906TT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Power - Max
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Turn On Time-Max (ton)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    JESD-30 Code
    Qualification Status
    Configuration
    Current - Collector Cutoff (Max)
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Power Dissipation-Max (Abs)
    Turn Off Time-Max (toff)
    Mount
    Weight
    Series
    Reach Compliance Code
    Continuous Collector Current
    View Compare
  • MMBT3906TT1G
    MMBT3906TT1G
    ACTIVE (Last Updated: 17 hours ago)
    8 Weeks
    Tin
    Surface Mount
    SC-75, SOT-416
    YES
    3
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -40V
    200mW
    DUAL
    GULL WING
    260
    -200mA
    250MHz
    40
    MMBT3906
    3
    1
    Single
    300mW
    200mW
    AMPLIFIER
    250MHz
    PNP
    PNP
    40V
    200mA
    100 @ 10mA 1V
    400mV @ 5mA, 50mA
    40V
    250MHz
    -400mV
    40V
    40V
    5V
    60
    70ns
    800μm
    1.65mm
    900μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MMBT2222AT-TP
    -
    12 Weeks
    -
    Surface Mount
    SOT-523
    YES
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -
    -
    DUAL
    GULL WING
    260
    -
    -
    10
    MMBT2222A
    3
    1
    -
    -
    150mW
    AMPLIFIER
    -
    NPN
    NPN
    -
    -
    75 @ 10mA 10V
    1V @ 50mA, 500mA
    -
    300MHz
    -
    -
    -
    -
    -
    35ns
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Matte Tin (Sn)
    R-PDSO-G3
    Not Qualified
    SINGLE
    100nA
    40V
    600mA
    300MHz
    0.35W
    285ns
    -
    -
    -
    -
    -
  • MMBT4124-7
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e0
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    25V
    300mW
    DUAL
    GULL WING
    235
    200mA
    300MHz
    10
    MMBT4124
    3
    1
    Single
    300mW
    -
    SWITCHING
    300MHz
    NPN
    NPN
    25V
    200mA
    120 @ 2mA 1V
    300mV @ 5mA, 50mA
    25V
    300MHz
    -
    25V
    30V
    5V
    120
    -
    1mm
    3.05mm
    1.4mm
    No SVHC
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    Not Qualified
    -
    50nA ICBO
    -
    -
    -
    -
    -
    Surface Mount
    7.994566mg
    Automotive, AEC-Q101
    not_compliant
    200mA
  • MMBT4126-7-F
    -
    15 Weeks
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -25V
    300mW
    DUAL
    GULL WING
    260
    -200mA
    250MHz
    40
    MMBT4126
    3
    1
    Single
    300mW
    -
    SWITCHING
    250MHz
    PNP
    PNP
    25V
    200mA
    120 @ 2mA 1V
    400mV @ 5mA, 50mA
    25V
    250MHz
    -400mV
    25V
    25V
    -4V
    120
    -
    1mm
    3.05mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn)
    -
    -
    -
    50nA ICBO
    -
    -
    -
    -
    -
    Surface Mount
    7.994566mg
    Automotive, AEC-Q101
    -
    -200mA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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