ON Semiconductor MMBT3906TT1G
- Part Number:
- MMBT3906TT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463104-MMBT3906TT1G
- Description:
- TRANS PNP 40V 0.2A SC75-3
- Datasheet:
- MMBT3906TT1G
ON Semiconductor MMBT3906TT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT3906TT1G.
- Lifecycle StatusACTIVE (Last Updated: 17 hours ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseSC-75, SOT-416
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-200mA
- Frequency250MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT3906
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Power - Max200mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product250MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency250MHz
- Collector Emitter Saturation Voltage-400mV
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- hFE Min60
- Turn On Time-Max (ton)70ns
- Height800μm
- Length1.65mm
- Width900μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT3906TT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.The collector emitter saturation voltage is -400mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -200mA.In the part, the transition frequency is 250MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
MMBT3906TT1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 250MHz
MMBT3906TT1G Applications
There are a lot of ON Semiconductor
MMBT3906TT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.The collector emitter saturation voltage is -400mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -200mA.In the part, the transition frequency is 250MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
MMBT3906TT1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 250MHz
MMBT3906TT1G Applications
There are a lot of ON Semiconductor
MMBT3906TT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT3906TT1G More Descriptions
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
MMBT Series 40 V 200 mA SMT PNP Silicon General Purpose Transistor - SOT-416
ON Semi MMBT3906TT1G PNP Bipolar Transistor, 0.2 A, 40 V, 3-Pin SOT-416 | ON Semiconductor MMBT3906TT1G
This tranisistor is designed for general purpose amplifier applications. It is housed in the SOT-416/SC-75 package which is designed for low power applications.
Bipolar Transistor, Pnp, -40V, Sot-416; Transistor Polarity:Pnp; Collector Emitter Voltage Max:40V; Continuous Collector Current:200Ma; Power Dissipation:200Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MMBT3906TT1G.
MMBT Series 40 V 200 mA SMT PNP Silicon General Purpose Transistor - SOT-416
ON Semi MMBT3906TT1G PNP Bipolar Transistor, 0.2 A, 40 V, 3-Pin SOT-416 | ON Semiconductor MMBT3906TT1G
This tranisistor is designed for general purpose amplifier applications. It is housed in the SOT-416/SC-75 package which is designed for low power applications.
Bipolar Transistor, Pnp, -40V, Sot-416; Transistor Polarity:Pnp; Collector Emitter Voltage Max:40V; Continuous Collector Current:200Ma; Power Dissipation:200Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MMBT3906TT1G.
The three parts on the right have similar specifications to MMBT3906TT1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinTurn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishJESD-30 CodeQualification StatusConfigurationCurrent - Collector Cutoff (Max)Voltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionPower Dissipation-Max (Abs)Turn Off Time-Max (toff)MountWeightSeriesReach Compliance CodeContinuous Collector CurrentView Compare
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MMBT3906TT1GACTIVE (Last Updated: 17 hours ago)8 WeeksTinSurface MountSC-75, SOT-416YES3SILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR99Other Transistors-40V200mWDUALGULL WING260-200mA250MHz40MMBT390631Single300mW200mWAMPLIFIER250MHzPNPPNP40V200mA100 @ 10mA 1V400mV @ 5mA, 50mA40V250MHz-400mV40V40V5V6070ns800μm1.65mm900μmNo SVHCNoROHS3 CompliantLead Free----------------
-
-12 Weeks-Surface MountSOT-523YES-SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99Other Transistors--DUALGULL WING260--10MMBT2222A31--150mWAMPLIFIER-NPNNPN--75 @ 10mA 10V1V @ 50mA, 500mA-300MHz-----35ns-----ROHS3 Compliant-Matte Tin (Sn)R-PDSO-G3Not QualifiedSINGLE100nA40V600mA300MHz0.35W285ns-----
-
---Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2005e0-Obsolete1 (Unlimited)3EAR99-25V300mWDUALGULL WING235200mA300MHz10MMBT412431Single300mW-SWITCHING300MHzNPNNPN25V200mA120 @ 2mA 1V300mV @ 5mA, 50mA25V300MHz-25V30V5V120-1mm3.05mm1.4mmNo SVHC-Non-RoHS CompliantContains Lead--Not Qualified-50nA ICBO-----Surface Mount7.994566mgAutomotive, AEC-Q101not_compliant200mA
-
-15 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3-3SILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Other Transistors-25V300mWDUALGULL WING260-200mA250MHz40MMBT412631Single300mW-SWITCHING250MHzPNPPNP25V200mA120 @ 2mA 1V400mV @ 5mA, 50mA25V250MHz-400mV25V25V-4V120-1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn)---50nA ICBO-----Surface Mount7.994566mgAutomotive, AEC-Q101--200mA
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