Diodes Incorporated MMBT3904LP-7
- Part Number:
- MMBT3904LP-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2465073-MMBT3904LP-7
- Description:
- TRANS NPN 40V 0.2A DFN1006-3
- Datasheet:
- MMBT3904LP-7
Diodes Incorporated MMBT3904LP-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBT3904LP-7.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-UFDFN
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- Additional FeatureHIGH RELIABILITY
- Max Power Dissipation250mW
- Terminal PositionBOTTOM
- Base Part NumberMMBT3904
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage300mV
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- Continuous Collector Current200mA
- Turn Off Time-Max (toff)250ns
- Turn On Time-Max (ton)70ns
- Collector-Base Capacitance-Max4pF
- Height500μm
- Length1mm
- Width600μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT3904LP-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 300MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMBT3904LP-7 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904LP-7 Applications
There are a lot of Diodes Incorporated
MMBT3904LP-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 300MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMBT3904LP-7 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904LP-7 Applications
There are a lot of Diodes Incorporated
MMBT3904LP-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT3904LP-7 More Descriptions
MMBT3904LP Series 40 V 200 mA NPN Surface Mount Transistor - DFN1006-3
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT NPN SM SIG 60V VCBO 40V VCEO 6.0 VEBO
Trans, Npn, 40V, 0.2A, 150Deg C, 1W Rohs Compliant: Yes |Diodes Inc. MMBT3904LP-7
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT NPN SM SIG 60V VCBO 40V VCEO 6.0 VEBO
Trans, Npn, 40V, 0.2A, 150Deg C, 1W Rohs Compliant: Yes |Diodes Inc. MMBT3904LP-7
The three parts on the right have similar specifications to MMBT3904LP-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureMax Power DissipationTerminal PositionBase Part NumberPin CountNumber of ElementsElement ConfigurationCase ConnectionGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentTurn Off Time-Max (toff)Turn On Time-Max (ton)Collector-Base Capacitance-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountSubcategoryTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationPower - MaxTransistor ApplicationCurrent - Collector Cutoff (Max)Voltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionPower Dissipation-Max (Abs)Contact PlatingVoltage - Rated DCCurrent RatingFrequencyPower DissipationMax Breakdown VoltagehFE MinView Compare
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MMBT3904LP-714 WeeksSurface MountSurface Mount3-UFDFN37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012009e4yesActive1 (Unlimited)3EAR99Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITY250mWBOTTOMMMBT390431SingleCOLLECTOR300MHzNPNNPN40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V300MHz300mV60V6V200mA250ns70ns4pF500μm1mm600μmNo SVHCNoROHS3 CompliantLead Free-----------------------
-
12 Weeks-Surface MountSOT-523--SILICON-55°C~150°C TJTape & Reel (TR)-2005e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)--DUALMMBT2222A31---NPNNPN--75 @ 10mA 10V1V @ 50mA, 500mA-300MHz----285ns35ns------ROHS3 Compliant-YESOther TransistorsGULL WING26010R-PDSO-G3Not QualifiedSINGLE150mWAMPLIFIER100nA40V600mA300MHz0.35W-------
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15 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007e3yesActive1 (Unlimited)3EAR99--150mWDUALMMBT390431Single-300MHzNPNNPN40V200mA100 @ 10mA 1V300mV @ 5mA, 50mA40V300MHz300mV60V6V200mA250ns70ns-750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free-Other TransistorsGULL WING26040----------Tin40V200mA300MHz150mW40V100
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--Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)----Obsolete1 (Unlimited)------MMBT3904------NPN--100 @ 10mA 1V300mV @ 5mA, 50mA------------------------350mW--40V200mA300MHz--------
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