Diodes Incorporated MMBT2907A-7
- Part Number:
- MMBT2907A-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2476654-MMBT2907A-7
- Description:
- TRANS PNP 60V 0.6A SOT23-3
- Datasheet:
- MMBT2907A
Diodes Incorporated MMBT2907A-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated MMBT2907A-7.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- SeriesAutomotive, AEC-Q101
- Published2002
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn85Pb15)
- Voltage - Rated DC-60V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)235
- Reach Compliance Codenot_compliant
- Current Rating-150mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberMMBT2907A
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power - Max300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)1.6V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage-1.6V
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)-60V
- Emitter Base Voltage (VEBO)-5V
- hFE Min100
- Continuous Collector Current-600mA
- Turn On Time-Max (ton)45ns
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MMBT2907A-7 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1.6V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Continuous collector voltages of -600mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -150mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 600mA volts.
MMBT2907A-7 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 200MHz
MMBT2907A-7 Applications
There are a lot of Diodes Incorporated
MMBT2907A-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1.6V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.Continuous collector voltages of -600mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -150mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 600mA volts.
MMBT2907A-7 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 200MHz
MMBT2907A-7 Applications
There are a lot of Diodes Incorporated
MMBT2907A-7 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT2907A-7 More Descriptions
TRANS PNP 60V 300MW SMD SOT23-3
French Electronic Distributor since 1988
PNPSMALL SIGNAL TRANSIST SOT23
French Electronic Distributor since 1988
PNPSMALL SIGNAL TRANSIST SOT23
The three parts on the right have similar specifications to MMBT2907A-7.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentTurn On Time-Max (ton)HeightLengthWidthREACH SVHCRoHS StatusLead FreeFactory Lead TimeContact PlatingNumber of PinsPbfree CodeSubcategoryFrequencyPower DissipationTurn Off Time-Max (toff)Radiation HardeningSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max FrequencyFrequency - TransitionView Compare
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MMBT2907A-7Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mgSILICON-55°C~150°C TJCut Tape (CT)Automotive, AEC-Q1012002e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn85Pb15)-60V300mWDUALGULL WING235not_compliant-150mA10MMBT2907A3R-PDSO-G3Not Qualified1Single300mWSWITCHING200MHzPNPPNP1.6V600mA100 @ 150mA 10V10nA ICBO1.6V @ 50mA, 500mA60V200MHz-1.6V60V-60V-5V100-600mA45ns1mm3.05mm1.4mmNo SVHCNon-RoHS CompliantContains Lead------------------
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Surface MountSurface MountSOT-5232.012816mgSILICON-55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012007e3Active1 (Unlimited)3EAR99-40V150mWDUALGULL WING260-200mA40MMBT39043--1Single--300MHzNPNNPN40V200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V300MHz300mV40V60V6V100200mA70ns750μm1.6mm800μmNo SVHCROHS3 CompliantLead Free15 WeeksTin3yesOther Transistors300MHz150mW250nsNo--------
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Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mg--55°C~150°C TJTape & Reel (TR)Automotive, AEC-Q1012000-Active1 (Unlimited)---40V300mW------MMBT3904---1Single300mW-300MHz-NPN40V200mA100 @ 10mA 1V50nA ICBO300mV @ 5mA, 50mA40V-300mV40V60V6V100200mA-1mm3.05mm1.4mmNo SVHCROHS3 CompliantLead Free15 WeeksTin3--300MHz350mW-NoSOT-23-3150°C-55°CNPN40V200mA300MHz300MHz
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Surface MountSurface MountSC-89, SOT-49030mg-150°C TJTape & Reel (TR)-2004-Last Time Buy1 (Unlimited)----250mW------MMBT2222---1Single250mW-300MHz-NPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V-1V40V75V6V75--780μm1.7mm980μm-ROHS3 CompliantLead Free16 Weeks-3--300MHz250mW--SOT-523F150°C-55°CNPN40V600mA100MHz300MHz
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