ON Semiconductor MMBT2369ALT1G
- Part Number:
- MMBT2369ALT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463208-MMBT2369ALT1G
- Description:
- TRANS NPN 15V 0.2A SOT23
- Datasheet:
- MMBT2369ALT1G
ON Semiconductor MMBT2369ALT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MMBT2369ALT1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC15V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating200mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMMBT2369A
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)15V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 100mA 1V
- Current - Collector Cutoff (Max)400nA
- Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage15V
- Transition Frequency500MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage15V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)4.5V
- hFE Min40
- Height940μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MMBT2369ALT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 100mA 1V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 10mA, 100mA.If the emitter base voltage is kept at 4.5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 500MHz is present in the part.There is a breakdown input voltage of 15V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
MMBT2369ALT1G Features
the DC current gain for this device is 20 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz
MMBT2369ALT1G Applications
There are a lot of ON Semiconductor
MMBT2369ALT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 100mA 1V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 10mA, 100mA.If the emitter base voltage is kept at 4.5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.A transition frequency of 500MHz is present in the part.There is a breakdown input voltage of 15V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
MMBT2369ALT1G Features
the DC current gain for this device is 20 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz
MMBT2369ALT1G Applications
There are a lot of ON Semiconductor
MMBT2369ALT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MMBT2369ALT1G More Descriptions
ON Semi MMBT2369ALT1G NPN Bipolar Transistor; 0.2 A; 15 V; 3-Pin SOT-23
Trans GP BJT NPN 15V 0.2A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
15V 225mW 20@100mA,1V 200mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
MMBT Series 15 V 200 mA Surface Mount NPN Silicon Switching Transistor - SOT-23
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 15V 0.2A 300mW Automotive 3-Pin SOT-23 T/R
BIPOLAR TRANSISTOR, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:15V; Continuous Collector Current:200mA; Power Dissipation:300mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
Trans GP BJT NPN 15V 0.2A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
15V 225mW 20@100mA,1V 200mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
MMBT Series 15 V 200 mA Surface Mount NPN Silicon Switching Transistor - SOT-23
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 15V 0.2A 300mW Automotive 3-Pin SOT-23 T/R
BIPOLAR TRANSISTOR, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:15V; Continuous Collector Current:200mA; Power Dissipation:300mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
The three parts on the right have similar specifications to MMBT2369ALT1G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountWeightSeriesFrequencyGain Bandwidth ProductContinuous Collector CurrentTurn Off Time-Max (toff)Turn On Time-Max (ton)Power - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityMax FrequencyView Compare
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MMBT2369ALT1GACTIVE (Last Updated: 3 days ago)10 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON-55°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)3SMD/SMTEAR99Other Transistors15V225mWDUALGULL WING260200mA40MMBT2369A31Single300mWSWITCHINGNPNNPN15V200mA20 @ 100mA 1V400nA500mV @ 10mA, 100mA15V500MHz500mV15V40V4.5V40940μm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free------------------
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-15 WeeksTinSurface MountSOT-523-3SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3-EAR99Other Transistors40V150mWDUALGULL WING260200mA40MMBT390431Single150mW-NPNNPN40V200mA100 @ 10mA 1V-300mV @ 5mA, 50mA40V300MHz300mV40V60V6V100750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead FreeSurface Mount2.012816mgAutomotive, AEC-Q101300MHz300MHz200mA250ns70ns---------
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---Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----------MMBT3904------NPN--100 @ 10mA 1V-300mV @ 5mA, 50mA----------------------350mW40V200mA300MHz-----
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-16 Weeks-Surface MountSC-89, SOT-490-3-150°C TJTape & Reel (TR)2004--Last Time Buy1 (Unlimited)-----250mW-----MMBT2222-1Single250mW--NPN40V600mA100 @ 150mA 1V-1V @ 50mA, 500mA40V-1V40V75V6V75780μm1.7mm980μm--ROHS3 CompliantLead FreeSurface Mount30mg-300MHz300MHz---250mW40V600mA300MHzSOT-523F150°C-55°CNPN100MHz
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