ON Semiconductor MJD32CG
- Part Number:
- MJD32CG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2465592-MJD32CG
- Description:
- TRANS PNP 100V 3A DPAK
- Datasheet:
- MJD32CG
ON Semiconductor MJD32CG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD32CG.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation1.56W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-3A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJD32
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.56W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product3MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.2V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height2.3876mm
- Length6.7056mm
- Width6.223mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD32CG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.
MJD32CG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32CG Applications
There are a lot of ON Semiconductor
MJD32CG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.
MJD32CG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32CG Applications
There are a lot of ON Semiconductor
MJD32CG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD32CG More Descriptions
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Transistor, Bipolar,Si,PNP,Power,VCEO 100VDC,IC 3A,PD 15W,DPAK,VCBO 100VDC
3.0 A, 100 V PNP Bipolar Power Transistor
MJD Series 100 V 3 A PNP Complementary Power Transistor - TO-252-3
Transistor MJD32 PNP General Purpose Amplifier Power 3A 100V DPAK
Trans GP BJT PNP 100V 3A 1560mW Automotive 3-Pin(2 Tab) DPAK Tube
Bipolar Transistors - BJT 3A 100V 15W PNP
Bipolar Transistor, Pnp, -100V; Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:3A; Power Dissipation Pd:15W; Transistor Mounting:surface Mount; No. Of Pins:4Pins; Transition Frequency Ft:3Mhz Rohs Compliant: Yes
Transistor, Bipolar,Si,PNP,Power,VCEO 100VDC,IC 3A,PD 15W,DPAK,VCBO 100VDC
3.0 A, 100 V PNP Bipolar Power Transistor
MJD Series 100 V 3 A PNP Complementary Power Transistor - TO-252-3
Transistor MJD32 PNP General Purpose Amplifier Power 3A 100V DPAK
Trans GP BJT PNP 100V 3A 1560mW Automotive 3-Pin(2 Tab) DPAK Tube
Bipolar Transistors - BJT 3A 100V 15W PNP
Bipolar Transistor, Pnp, -100V; Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:100V; Dc Collector Current:3A; Power Dissipation Pd:15W; Transistor Mounting:surface Mount; No. Of Pins:4Pins; Transition Frequency Ft:3Mhz Rohs Compliant: Yes
The three parts on the right have similar specifications to MJD32CG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Contact PlatingView Compare
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MJD32CGACTIVE (Last Updated: 2 days ago)8 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES34.535924gSILICON-65°C~150°C TJTube2001e3yesActive1 (Unlimited)2EAR99Tin (Sn)Other Transistors-100V1.56WGULL WING260-3A3MHz40MJD323R-PSSO-G21Single1.56WCOLLECTORAMPLIFIER3MHzPNPPNP100V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3MHz1.2V100V5V252.3876mm6.7056mm6.223mmNo SVHCNoROHS3 CompliantLead Free----------------
-
-------------------------------------------------------100V1.2V @ 375mA, 3ANPNDPAK-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-10 @ 3A, 4V50µA3A-
-
ACTIVE (Last Updated: 4 hours ago)8 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3-SILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)2EAR99-Other Transistors100V1.56WGULL WING2603A3MHz40MJD313R-PSSO-G21Single1.56WCOLLECTORAMPLIFIER3MHzNPNNPN100V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3MHz1.2V100V5V252.3876mm6.7056mm6.223mmNo SVHCNoROHS3 CompliantLead Free--------------Tin
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-------------------------------------------------------300V-NPND-Pak-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-30 @ 50mA, 10V100µA (ICBO)500mA-
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