STMicroelectronics MJD32CT4
- Part Number:
- MJD32CT4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3585019-MJD32CT4
- Description:
- TRANS PNP 100V 3A DPAK
- ECAD Model:
-
- Datasheet:
- MJD32C
STMicroelectronics MJD32CT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJD32CT4.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation15W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-3A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMJD32
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation15W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- JEDEC-95 CodeTO-252AA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage100V
- Collector Emitter Saturation Voltage-1.2V
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min20
- Height2.4mm
- Length6.6mm
- Width6.2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD32CT4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.The collector emitter saturation voltage is -1.2V, which allows for maximum design flexibility.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
MJD32CT4 Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
MJD32CT4 Applications
There are a lot of STMicroelectronics
MJD32CT4 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.The collector emitter saturation voltage is -1.2V, which allows for maximum design flexibility.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
MJD32CT4 Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of -1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
MJD32CT4 Applications
There are a lot of STMicroelectronics
MJD32CT4 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD32CT4 More Descriptions
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Trans GP BJT PNP 100V 3A 15000mW 3-Pin(2 Tab) DPAK T/R / TRANS PNP 100V 3A DPAK
100V 15W 3A 10@3A4V 1.2V@3A375mA PNP 150¡Í@(Tj) TO-252-3 Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT PNP Gen Pur Switch
TRANSISTOR, BJT, PNP, -100V, -3A, TO-252; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 50hFE; Transis
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = -3 / Collector-Emitter Voltage (Vceo) V = -100 / DC Current Gain (hFE) = 10 / Collector-Base Voltage (Vcbo) V = -100 / Emitter-Base Voltage (Vebo) V = -5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 15 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = -1.2
Trans GP BJT PNP 100V 3A 15000mW 3-Pin(2 Tab) DPAK T/R / TRANS PNP 100V 3A DPAK
100V 15W 3A 10@3A4V 1.2V@3A375mA PNP 150¡Í@(Tj) TO-252-3 Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT PNP Gen Pur Switch
TRANSISTOR, BJT, PNP, -100V, -3A, TO-252; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 50hFE; Transis
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = -3 / Collector-Emitter Voltage (Vceo) V = -100 / DC Current Gain (hFE) = 10 / Collector-Base Voltage (Vcbo) V = -100 / Emitter-Base Voltage (Vebo) V = -5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 15 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = -1.2
The three parts on the right have similar specifications to MJD32CT4.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusSurface MountPublishedPbfree CodeTerminal FinishFrequencyGain Bandwidth ProductTransition FrequencyView Compare
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MJD32CT48 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6334.535924gSILICON150°C TJTape & Reel (TR)e3Active1 (Unlimited)2EAR99Other Transistors-100V15WGULL WING260-3A30MJD323R-PSSO-G21Single15WCOLLECTORSWITCHINGPNPPNP100V3A10 @ 3A 4V50μATO-252AA1.2V @ 375mA, 3A100V-1.2V100V100V5V202.4mm6.6mm6.2mmNo SVHCNoROHS3 CompliantLead Free----------------------- -
---------------------------------------------------100V1.2V @ 375mA, 3ANPNDPAK-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-10 @ 3A, 4V50µA3A--------
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8 Weeks--Surface MountTO-252-3, DPak (2 Leads Tab), SC-633-SILICON-65°C~150°C TJTape & Reel (TR)e3Active1 (Unlimited)2EAR99Other Transistors-40V1.56WGULL WING260-3A40MJD323R-PSSO-G21Single1.56WCOLLECTORAMPLIFIERPNPPNP40V3A10 @ 3A 4V50μA-1.2V @ 375mA, 3A40V1.2V-40V5V25----NoROHS3 CompliantLead Free--------------ACTIVE (Last Updated: 1 week ago)YES2005yesTin (Sn)3MHz3MHz3MHz
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---------------------------------------------------300V-NPND-Pak-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-30 @ 50mA, 10V100µA (ICBO)500mA--------
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