Fairchild/ON Semiconductor MJD32CTM
- Part Number:
- MJD32CTM
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3554011-MJD32CTM
- Description:
- TRANS PNP 100V 3A DPAK
- Datasheet:
- MJD32(C)
Fairchild/ON Semiconductor MJD32CTM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor MJD32CTM.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageD-Pak
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max1.56W
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)3A
- Frequency - Transition3MHz
- RoHS StatusNon-RoHS Compliant
MJD32CTM Overview
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).Product package D-Pak comes from the supplier.Collector Emitter Breakdown occurs at 100VV - Maximum voltage.
MJD32CTM Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the supplier device package of D-Pak
MJD32CTM Applications
There are a lot of Rochester Electronics, LLC
MJD32CTM applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.2V @ 375mA, 3A means Ic has reached its maximum value(saturated).Product package D-Pak comes from the supplier.Collector Emitter Breakdown occurs at 100VV - Maximum voltage.
MJD32CTM Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the supplier device package of D-Pak
MJD32CTM Applications
There are a lot of Rochester Electronics, LLC
MJD32CTM applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD32CTM More Descriptions
Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 10 @ 3A 4V 50muA 1.56W 3MHz
3.0 A, 100 V PNP Bipolar Power Transistor
Bipolar Transistors - BJT PNP 100V 1A Epitaxial
Trans GP BJT PNP 100V 3A 3-Pin (2 Tab) DPAK T/R
Pnp Power Transistor 100V/1A Dpak Rohs Compliant: Yes
3.0 A, 100 V PNP Bipolar Power Transistor
Bipolar Transistors - BJT PNP 100V 1A Epitaxial
Trans GP BJT PNP 100V 3A 3-Pin (2 Tab) DPAK T/R
Pnp Power Transistor 100V/1A Dpak Rohs Compliant: Yes
The three parts on the right have similar specifications to MJD32CTM.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Factory Lead TimeSurface MountTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyView Compare
-
MJD32CTMSurface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak150°C TJTape & Reel (TR)Last Time Buy1 (Unlimited)1.56WPNP10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3A3MHzNon-RoHS Compliant-------------------------------------
-
----------------100V1.2V @ 375mA, 3ANPNDPAK-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-10 @ 3A, 4V50µA3A----------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-150°C TJTape & Reel (TR)Active1 (Unlimited)1.25WPNP10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3A3MHzROHS3 Compliant--------------12 WeeksYESSILICON2007e3yes3EAR99Matte Tin (Sn)SINGLEGULL WING26010MJD32C3R-PSSO-G3Not Qualified1SINGLESWITCHINGPNP3MHz
-
----------------300V-NPND-Pak-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-30 @ 50mA, 10V100µA (ICBO)500mA----------------------
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
07 October 2023
How does IRF640 differ from IRF740?
Ⅰ. What is MOSFET?Ⅱ. Overview of IRF640Ⅲ. Overview of IRF740Ⅳ. IRF640 vs IRF740: SymbolⅤ. IRF640 vs IRF740: Technical parametersⅥ. IRF640 vs IRF740: FeaturesⅦ. IRF640 vs IRF740: Working principleⅧ.... -
08 October 2023
2N3773 Transistor Equivalent, Features and Applications
Ⅰ. 2N3773 transistor overviewⅡ. Symbol and pin connection of 2N3773Ⅲ. Technical parametersⅣ. What are the features of 2N3773?Ⅴ. How does the 2N3773 achieve amplification and switching functions in... -
08 October 2023
IRFP260N Power Mosfet Transistor: Symbol, Features and Working Principle
Ⅰ. IRFP260N transistor descriptionⅡ. Symbol, footprint and pin connection of IRFP260NⅢ. Technical parametersⅣ. Features of IRFP260NⅤ. How does IRFP260N work and how does it drive IRFP260N?Ⅵ. Absolute maximum... -
09 October 2023
TIP117 Darlington Power Transistor Pinout, Equivalent, Features and Uses
Ⅰ. Overview of TIP117Ⅱ. The symbol, footprint and pinout of TIP117Ⅲ. Technical parameters of TIP117Ⅳ. What are the features of TIP117?Ⅴ. Package and packaging of TIP117Ⅵ. What are...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.