ON Semiconductor MJD31CG
- Part Number:
- MJD31CG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3553740-MJD31CG
- Description:
- TRANS NPN 100V 3A DPAK
- Datasheet:
- MJD31CG
ON Semiconductor MJD31CG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD31CG.
- Lifecycle StatusACTIVE (Last Updated: 4 hours ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC100V
- Max Power Dissipation1.56W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating3A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJD31
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.56W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product3MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.2V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height2.3876mm
- Length6.7056mm
- Width6.223mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD31CG Overview
DC current gain in this device equals 10 @ 3A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 375mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.As a result, the part has a transition frequency of 3MHz.In extreme cases, the collector current can be as low as 3A volts.
MJD31CG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31CG Applications
There are a lot of ON Semiconductor
MJD31CG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 10 @ 3A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 375mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.As a result, the part has a transition frequency of 3MHz.In extreme cases, the collector current can be as low as 3A volts.
MJD31CG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31CG Applications
There are a lot of ON Semiconductor
MJD31CG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD31CG More Descriptions
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Transistor, Bipolar,Si,NPN,Power,VCEO 100VDC,IC 3A,PD 15W,DPAK,VCBO 100VDC
3.0 A, 100 V NPN Bipolar Power Transistor
MJD Series 100 V 3 A NPN Complementary Power Transistor - TO-252-3
Trans GP BJT NPN 100V 3A 3-Pin(2 Tab) DPAK Rail - Rail/Tube
Bipolar Transistors - BJT 3A 100V 15W NPN
TRANSISTOR, NPN, D-PAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Case Style:
Rf Transistor, Npn, 100V, 3Mhz Dpak; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:1.56W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD31CG.
Transistor, Bipolar,Si,NPN,Power,VCEO 100VDC,IC 3A,PD 15W,DPAK,VCBO 100VDC
3.0 A, 100 V NPN Bipolar Power Transistor
MJD Series 100 V 3 A NPN Complementary Power Transistor - TO-252-3
Trans GP BJT NPN 100V 3A 3-Pin(2 Tab) DPAK Rail - Rail/Tube
Bipolar Transistors - BJT 3A 100V 15W NPN
TRANSISTOR, NPN, D-PAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Case Style:
Rf Transistor, Npn, 100V, 3Mhz Dpak; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:1.56W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD31CG.
The three parts on the right have similar specifications to MJD31CG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountWeightMax Breakdown VoltageJEDEC-95 CodeTerminal FinishView Compare
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MJD31CGACTIVE (Last Updated: 4 hours ago)8 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)2EAR99Other Transistors100V1.56WGULL WING2603A3MHz40MJD313R-PSSO-G21Single1.56WCOLLECTORAMPLIFIER3MHzNPNNPN100V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3MHz1.2V100V5V252.3876mm6.7056mm6.223mmNo SVHCNoROHS3 CompliantLead Free------
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LAST SHIPMENTS (Last Updated: 5 days ago)6 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-3SILICON150°C TJTape & Reel (TR)2001e3yesObsolete1 (Unlimited)2EAR99Other Transistors-100V1.56WGULL WING--3A3MHz-MJD32-R-PSSO-G21Single1.56W-AMPLIFIER3MHzPNPPNP100V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3MHz-1.2V-100V-5V102.3mm6.6mm6.1mmNo SVHCNoRoHS CompliantLead FreeSurface Mount260.37mg100V--
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-8 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-3SILICON150°C TJTape & Reel (TR)-e3-Active1 (Unlimited)2EAR99Other Transistors-100V15WGULL WING260-3A-30MJD323R-PSSO-G21Single15WCOLLECTORSWITCHING-PNPPNP100V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A100V--1.2V100V5V202.4mm6.6mm6.2mmNo SVHCNoROHS3 CompliantLead FreeSurface Mount4.535924g100VTO-252AA-
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ACTIVE (Last Updated: 1 week ago)8 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)2EAR99Other Transistors-40V1.56WGULL WING260-3A3MHz40MJD323R-PSSO-G21Single1.56WCOLLECTORAMPLIFIER3MHzPNPPNP40V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A40V3MHz1.2V40V5V25----NoROHS3 CompliantLead Free----Tin (Sn)
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