Micro Commercial Co MJD32C-TP
- Part Number:
- MJD32C-TP
- Manufacturer:
- Micro Commercial Co
- Ventron No:
- 3068891-MJD32C-TP
- Description:
- TRANS PNP 100V 3A DPAK
- ECAD Model:
-
- Datasheet:
- MJD32C-TP
Micro Commercial Co MJD32C-TP technical specifications, attributes, parameters and parts with similar specifications to Micro Commercial Co MJD32C-TP.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- Base Part NumberMJD32C
- Pin Count3
- JESD-30 CodeR-PSSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max1.25W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)3A
- Transition Frequency3MHz
- Frequency - Transition3MHz
- RoHS StatusROHS3 Compliant
MJD32C-TP Overview
DC current gain in this device equals 10 @ 3A 4V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 375mA, 3A.As a result, the part has a transition frequency of 3MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MJD32C-TP Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
a transition frequency of 3MHz
MJD32C-TP Applications
There are a lot of Micro Commercial Co
MJD32C-TP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 10 @ 3A 4V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 375mA, 3A.As a result, the part has a transition frequency of 3MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MJD32C-TP Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
a transition frequency of 3MHz
MJD32C-TP Applications
There are a lot of Micro Commercial Co
MJD32C-TP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD32C-TP More Descriptions
Bipolar Transistors - BJT TRANS PNP 100V 3A DPAK
TRANS PNP 100V 3A DPAK
Power Transistor / 13" REEL
TRANS PNP 100V 3A DPAK
Power Transistor / 13" REEL
The three parts on the right have similar specifications to MJD32C-TP.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusMountNumber of PinsSubcategoryMax Power DissipationPolarityPower DissipationCase ConnectionCollector Emitter Voltage (VCEO)Max Collector CurrentJEDEC-95 CodeCollector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningSupplier Device PackageVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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MJD32C-TP12 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)SINGLEGULL WING26010MJD32C3R-PSSO-G3Not Qualified1SINGLE1.25WSWITCHINGPNPPNP10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3A3MHz3MHzROHS3 Compliant-------------------------------- -
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON150°C TJTape & Reel (TR)-e3yesObsolete1 (Unlimited)2EAR99Matte Tin (Sn) - annealedSINGLEGULL WING260-MJD363R-PSSO-G2-1SINGLE-SWITCHING-PNP60 @ 1A 4V20μA ICBO900mV @ 150mA, 3A----ROHS3 CompliantSurface Mount3Other Transistors15WNPN, PNP15WCOLLECTOR60V3ATO-252AA60V60V60V5V30No---------------
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--150°C TJTape & Reel (TR)---Last Time Buy1 (Unlimited)-------------1.56W--PNP10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3A-3MHzNon-RoHS Compliant----------------D-Pak--------------
-
------------------------------------------------------300V-NPND-Pak-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-30 @ 50mA, 10V100µA (ICBO)500mA
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