STMicroelectronics MJD31CT4
- Part Number:
- MJD31CT4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3585010-MJD31CT4
- Description:
- TRANS NPN 100V 3A DPAK
- Datasheet:
- MJD31CT4
STMicroelectronics MJD31CT4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJD31CT4.
- Voltage - Collector Emitter Breakdown (Max):100V
- Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
- Transistor Type:NPN
- Supplier Device Package:DPAK
- Series:-
- Power - Max:15W
- Packaging:Tape & Reel (TR)
- Package / Case:TO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Frequency - Transition:-
- DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A, 4V
- Current - Collector Cutoff (Max):50µA
- Current - Collector (Ic) (Max):3A
part No. MJD31CT4 Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
MJD31CT4 More Descriptions
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Trans GP BJT NPN 100V 3A 15000mW 3-Pin(2 Tab) DPAK T/R
MJD31C Series NPN 100 V 3A Surface Mount Low Voltage Power Transistor - TO-252
Bipolar Transistors - BJT NPN Gen Pur Switch
Power Bipolar, NPN, 4V, 375mA, DPAK, Tape and ReelSTMicroelectronics SCT
TRANSISTOR, NPN, SMD, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Case Sty
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 3 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 50 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.2 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.8
Trans GP BJT NPN 100V 3A 15000mW 3-Pin(2 Tab) DPAK T/R
MJD31C Series NPN 100 V 3A Surface Mount Low Voltage Power Transistor - TO-252
Bipolar Transistors - BJT NPN Gen Pur Switch
Power Bipolar, NPN, 4V, 375mA, DPAK, Tape and ReelSTMicroelectronics SCT
TRANSISTOR, NPN, SMD, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Case Sty
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 3 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 50 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.2 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.8
The three parts on the right have similar specifications to MJD31CT4.
-
ImagePart NumberManufacturerVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Mounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusFactory Lead TimeSurface MountTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyView Compare
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MJD31CT4100V1.2V @ 375mA, 3ANPNDPAK-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-10 @ 3A, 4V50µA3A---------------------------------------
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--------------Surface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak150°C TJTape & Reel (TR)Last Time Buy1 (Unlimited)1.56WPNP10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3A3MHzNon-RoHS Compliant----------------------
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--------------Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-150°C TJTape & Reel (TR)Active1 (Unlimited)1.25WPNP10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3A3MHzROHS3 Compliant12 WeeksYESSILICON2007e3yes3EAR99Matte Tin (Sn)SINGLEGULL WING26010MJD32C3R-PSSO-G3Not Qualified1SINGLESWITCHINGPNP3MHz
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300V-NPND-Pak-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-30 @ 50mA, 10V100µA (ICBO)500mA--------------------------------------
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