ON Semiconductor MJD32RLG
- Part Number:
- MJD32RLG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069193-MJD32RLG
- Description:
- TRANS PNP 40V 3A DPAK
- Datasheet:
- MJD32RLG
ON Semiconductor MJD32RLG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD32RLG.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- Max Power Dissipation1.56W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-3A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJD32
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.56W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product3MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage40V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.2V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD32RLG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.The collector emitter saturation voltage is 1.2V, which allows for maximum design flexibility.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.In the part, the transition frequency is 3MHz.A maximum collector current of 3A volts can be achieved.
MJD32RLG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32RLG Applications
There are a lot of ON Semiconductor
MJD32RLG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 3A 4V.The collector emitter saturation voltage is 1.2V, which allows for maximum design flexibility.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.In the part, the transition frequency is 3MHz.A maximum collector current of 3A volts can be achieved.
MJD32RLG Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32RLG Applications
There are a lot of ON Semiconductor
MJD32RLG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD32RLG More Descriptions
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
3 A, 40 V PNP Bipolar Power Transistor
Trans GP BJT PNP 40V 3A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
40V 15W 3A 10@3A4V 3MHz 1.2V@3A375mA PNP -65¡Í~ 150¡Í@(Tj) DPAK Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT 3A 40V 15W PNP
Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:40V; Dc Collector Current:3A; Power Dissipation Pd:15W; Transistor Mounting:surface Mount; No. Of Pins:4Pins; Transition Frequency Ft:3Mhz; Dc Current Gain Hfe:10Hfe Rohs Compliant: Yes
3 A, 40 V PNP Bipolar Power Transistor
Trans GP BJT PNP 40V 3A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
40V 15W 3A 10@3A4V 3MHz 1.2V@3A375mA PNP -65¡Í~ 150¡Í@(Tj) DPAK Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT 3A 40V 15W PNP
Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:40V; Dc Collector Current:3A; Power Dissipation Pd:15W; Transistor Mounting:surface Mount; No. Of Pins:4Pins; Transition Frequency Ft:3Mhz; Dc Current Gain Hfe:10Hfe Rohs Compliant: Yes
The three parts on the right have similar specifications to MJD32RLG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreeMountTerminal PositionPolarityConfigurationJEDEC-95 CodeMax Breakdown VoltageContact PlatingHeightLengthWidthREACH SVHCQualification StatusPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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MJD32RLGACTIVE (Last Updated: 1 week ago)8 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)2EAR99Tin (Sn)Other Transistors-40V1.56WGULL WING260-3A3MHz40MJD323R-PSSO-G21Single1.56WCOLLECTORAMPLIFIER3MHzPNPPNP40V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A40V3MHz1.2V40V5V25NoROHS3 CompliantLead Free-----------------
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--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-3SILICON150°C TJTape & Reel (TR)-e3yesObsolete1 (Unlimited)2EAR99Matte Tin (Sn) - annealedOther Transistors-15WGULL WING260---MJD363R-PSSO-G21-15WCOLLECTORSWITCHING--PNP60V3A60 @ 1A 4V20μA ICBO900mV @ 150mA, 3A60V--60V5V30NoROHS3 Compliant-Surface MountSINGLENPN, PNPSINGLETO-252AA60V----------
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ACTIVE (Last Updated: 4 hours ago)8 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJTube2005e3yesActive1 (Unlimited)2EAR99-Other Transistors100V1.56WGULL WING2603A3MHz40MJD313R-PSSO-G21Single1.56WCOLLECTORAMPLIFIER3MHzNPNNPN100V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3MHz1.2V100V5V25NoROHS3 CompliantLead Free------Tin2.3876mm6.7056mm6.223mmNo SVHC-----
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-12 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES-SILICON150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)---GULL WING260--10MJD32C3R-PSSO-G31---SWITCHING-PNPPNP--10 @ 3A 4V50μA1.2V @ 375mA, 3A-3MHz-----ROHS3 Compliant--SINGLE-SINGLE-------Not Qualified1.25W100V3A3MHz
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