MJD31CT4

ON Semiconductor MJD31CT4

Part Number:
MJD31CT4
Manufacturer:
ON Semiconductor
Ventron No:
2466947-MJD31CT4
Description:
TRANS NPN 100V 3A DPAK
ECAD Model:
Datasheet:
MJD31CT4

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Specifications
ON Semiconductor MJD31CT4 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD31CT4.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Supplier Device Package
    DPAK
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Power - Max
    15W
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10 @ 3A 4V
  • Current - Collector Cutoff (Max)
    50μA
  • Vce Saturation (Max) @ Ib, Ic
    1.2V @ 375mA, 3A
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Current - Collector (Ic) (Max)
    3A
  • Frequency - Transition
    3MHz
  • RoHS Status
    Non-RoHS Compliant
Description
MJD31CT4 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 3A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 375mA, 3A.The product comes in the supplier device package of DPAK.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.

MJD31CT4 Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the supplier device package of DPAK


MJD31CT4 Applications
There are a lot of Rochester Electronics, LLC
MJD31CT4 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
MJD31CT4 More Descriptions
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Trans GP BJT NPN 100V 3A 15000mW 3-Pin(2 Tab) DPAK T/R
MJD31C Series NPN 100 V 3A Surface Mount Low Voltage Power Transistor - TO-252
Bipolar Transistors - BJT NPN Gen Pur Switch
Power Bipolar, NPN, 4V, 375mA, DPAK, Tape and ReelSTMicroelectronics SCT
TRANSISTOR, NPN, SMD, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Case Sty
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 3 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 50 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.2 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.8
Product Comparison
The three parts on the right have similar specifications to MJD31CT4.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Power - Max
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    RoHS Status
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Surface Mount
    Number of Pins
    Transistor Element Material
    Published
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Terminal Finish
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    View Compare
  • MJD31CT4
    MJD31CT4
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    DPAK
    -65°C~150°C TJ
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    15W
    NPN
    10 @ 3A 4V
    50μA
    1.2V @ 375mA, 3A
    100V
    3A
    3MHz
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD31CG
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -65°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    -
    NPN
    10 @ 3A 4V
    50μA
    1.2V @ 375mA, 3A
    -
    -
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 4 hours ago)
    8 Weeks
    Tin
    YES
    3
    SILICON
    2005
    e3
    yes
    2
    EAR99
    Other Transistors
    100V
    1.56W
    GULL WING
    260
    3A
    3MHz
    40
    MJD31
    3
    R-PSSO-G2
    1
    Single
    1.56W
    COLLECTOR
    AMPLIFIER
    3MHz
    NPN
    100V
    3A
    100V
    3MHz
    1.2V
    100V
    5V
    25
    2.3876mm
    6.7056mm
    6.223mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD32RLG
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -65°C~150°C TJ
    Tape & Reel (TR)
    Active
    1 (Unlimited)
    -
    PNP
    10 @ 3A 4V
    50μA
    1.2V @ 375mA, 3A
    -
    -
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 1 week ago)
    8 Weeks
    -
    YES
    3
    SILICON
    2005
    e3
    yes
    2
    EAR99
    Other Transistors
    -40V
    1.56W
    GULL WING
    260
    -3A
    3MHz
    40
    MJD32
    3
    R-PSSO-G2
    1
    Single
    1.56W
    COLLECTOR
    AMPLIFIER
    3MHz
    PNP
    40V
    3A
    40V
    3MHz
    1.2V
    40V
    5V
    25
    -
    -
    -
    -
    No
    Lead Free
    Tin (Sn)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MJD340T4
    -
    -
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    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    300V
    -
    NPN
    D-Pak
    -
    15W
    Tape & Reel (TR)
    TO-252-3, DPak (2 Leads Tab), SC-63
    150°C (TJ)
    Surface Mount
    -
    30 @ 50mA, 10V
    100µA (ICBO)
    500mA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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