ON Semiconductor MJD31CT4
- Part Number:
- MJD31CT4
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2466947-MJD31CT4
- Description:
- TRANS NPN 100V 3A DPAK
- Datasheet:
- MJD31CT4
ON Semiconductor MJD31CT4 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD31CT4.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageDPAK
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max15W
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)3A
- Frequency - Transition3MHz
- RoHS StatusNon-RoHS Compliant
MJD31CT4 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 3A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 375mA, 3A.The product comes in the supplier device package of DPAK.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.
MJD31CT4 Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the supplier device package of DPAK
MJD31CT4 Applications
There are a lot of Rochester Electronics, LLC
MJD31CT4 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 3A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 375mA, 3A.The product comes in the supplier device package of DPAK.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.
MJD31CT4 Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the supplier device package of DPAK
MJD31CT4 Applications
There are a lot of Rochester Electronics, LLC
MJD31CT4 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD31CT4 More Descriptions
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Trans GP BJT NPN 100V 3A 15000mW 3-Pin(2 Tab) DPAK T/R
MJD31C Series NPN 100 V 3A Surface Mount Low Voltage Power Transistor - TO-252
Bipolar Transistors - BJT NPN Gen Pur Switch
Power Bipolar, NPN, 4V, 375mA, DPAK, Tape and ReelSTMicroelectronics SCT
TRANSISTOR, NPN, SMD, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Case Sty
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 3 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 50 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.2 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.8
Trans GP BJT NPN 100V 3A 15000mW 3-Pin(2 Tab) DPAK T/R
MJD31C Series NPN 100 V 3A Surface Mount Low Voltage Power Transistor - TO-252
Bipolar Transistors - BJT NPN Gen Pur Switch
Power Bipolar, NPN, 4V, 375mA, DPAK, Tape and ReelSTMicroelectronics SCT
TRANSISTOR, NPN, SMD, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Case Sty
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 3 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 50 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.2 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.8
The three parts on the right have similar specifications to MJD31CT4.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusLifecycle StatusFactory Lead TimeContact PlatingSurface MountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningLead FreeTerminal FinishVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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MJD31CT4Surface MountTO-252-3, DPak (2 Leads Tab), SC-63DPAK-65°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)15WNPN10 @ 3A 4V50μA1.2V @ 375mA, 3A100V3A3MHzNon-RoHS Compliant-----------------------------------------------------------
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--65°C~150°C TJTubeActive1 (Unlimited)-NPN10 @ 3A 4V50μA1.2V @ 375mA, 3A---ROHS3 CompliantACTIVE (Last Updated: 4 hours ago)8 WeeksTinYES3SILICON2005e3yes2EAR99Other Transistors100V1.56WGULL WING2603A3MHz40MJD313R-PSSO-G21Single1.56WCOLLECTORAMPLIFIER3MHzNPN100V3A100V3MHz1.2V100V5V252.3876mm6.7056mm6.223mmNo SVHCNoLead Free---------------
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--65°C~150°C TJTape & Reel (TR)Active1 (Unlimited)-PNP10 @ 3A 4V50μA1.2V @ 375mA, 3A---ROHS3 CompliantACTIVE (Last Updated: 1 week ago)8 Weeks-YES3SILICON2005e3yes2EAR99Other Transistors-40V1.56WGULL WING260-3A3MHz40MJD323R-PSSO-G21Single1.56WCOLLECTORAMPLIFIER3MHzPNP40V3A40V3MHz1.2V40V5V25----NoLead FreeTin (Sn)--------------
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------------------------------------------------------------300V-NPND-Pak-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-30 @ 50mA, 10V100µA (ICBO)500mA
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