STMicroelectronics MJD31CT4-A
- Part Number:
- MJD31CT4-A
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2464073-MJD31CT4-A
- Description:
- TRANS NPN 100V 3A DPAK
- ECAD Model:
-
- Datasheet:
- MJD31CT4-A
STMicroelectronics MJD31CT4-A technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJD31CT4-A.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation15W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMJD31
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation15W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage100V
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD31CT4-A Overview
In this device, the DC current gain is 10 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
MJD31CT4-A Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
MJD31CT4-A Applications
There are a lot of STMicroelectronics
MJD31CT4-A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
MJD31CT4-A Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
MJD31CT4-A Applications
There are a lot of STMicroelectronics
MJD31CT4-A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD31CT4-A More Descriptions
Trans GP BJT NPN 100V 3A 15000mW Automotive 3-Pin(2 Tab) DPAK T/R
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
Bipolar Transistors - BJT LO VLT NPN PWR TRANS
TRANSISTOR, NPN, 100V, 3A, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Cas
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
Bipolar Transistors - BJT LO VLT NPN PWR TRANS
TRANSISTOR, NPN, 100V, 3A, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Cas
The three parts on the right have similar specifications to MJD31CT4-A.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionContact PlatingSurface MountPublishedPbfree CodeVoltage - Rated DCCurrent RatingFrequencyGain Bandwidth ProductTransition FrequencyCollector Emitter Saturation VoltagehFE MinHeightLengthWidthREACH SVHCVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
-
MJD31CT4-AACTIVE (Last Updated: 8 months ago)8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON150°C TJTape & Reel (TR)e3Active1 (Unlimited)2EAR99Matte Tin (Sn)Other Transistors15WGULL WING26030MJD313R-PSSO-G21Single15WCOLLECTORSWITCHINGNPNNPN100V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A100V100V100V5VNoROHS3 CompliantLead Free----------------------------------- -
---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--150°C TJTape & Reel (TR)-Last Time Buy1 (Unlimited)-----------------PNP--10 @ 3A 4V50μA1.2V @ 375mA, 3A-----Non-RoHS Compliant-D-Pak1.56W100V3A3MHz-----------------------------
-
ACTIVE (Last Updated: 4 hours ago)8 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-65°C~150°C TJTubee3Active1 (Unlimited)2EAR99-Other Transistors1.56WGULL WING26040MJD313R-PSSO-G21Single1.56WCOLLECTORAMPLIFIERNPNNPN100V3A10 @ 3A 4V50μA1.2V @ 375mA, 3A100V-100V5VNoROHS3 CompliantLead Free-----TinYES2005yes100V3A3MHz3MHz3MHz1.2V252.3876mm6.7056mm6.223mmNo SVHC--------------
-
--------------------------------------------------------------300V-NPND-Pak-15WTape & Reel (TR)TO-252-3, DPak (2 Leads Tab), SC-63150°C (TJ)Surface Mount-30 @ 50mA, 10V100µA (ICBO)500mA
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
14 September 2023
TDA7297 VS TDA7266: What Is The Difference?
In audio equipment, the power amplifier is one of the crucial components. It can amplify low-voltage, low-current signals into high-voltage, high-current signals, thereby increasing output power. Among them,... -
15 September 2023
ATMEGA2560-16AU Footprint, Parameters and Application
Ⅰ. What is ATMEGA2560-16AU?ATMEGA2560-16AU is a powerful MCU microcontroller produced by Microchip Corporation of the United States. It uses the AVR CPU core, combined with a rich instruction... -
15 September 2023
Comparing LM741CN and UA741CN Operational Amplifiers
The two op amps, LM741CN and UA741CN, have similar functional and performance characteristics. They both feature single op amps and similar supply voltages and pinouts. However, they have... -
18 September 2023
TL074CN Symbol, Features and Package
Ⅰ. Overview of TL074CNⅡ. 3D Model and symbol of TL074CNⅢ. Footprint of TL074CNⅣ. Technical parametersⅤ. Features of TL074CNⅥ. Application of TL074CNⅦ. Package of TL074CNⅧ. How to optimize the...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.