ON Semiconductor MJD127T4G
- Part Number:
- MJD127T4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3068877-MJD127T4G
- Description:
- TRANS PNP DARL 100V 8A DPAK
- Datasheet:
- MJD127T4G
ON Semiconductor MJD127T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD127T4G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation1.75W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-8A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMJD127
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation20W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A 4V
- Current - Collector Cutoff (Max)10μA
- Vce Saturation (Max) @ Ib, Ic4V @ 80mA, 8A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency4MHz
- Collector Emitter Saturation Voltage2V
- Max Breakdown Voltage100V
- Frequency - Transition4MHz
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current8A
- Height2.38mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MJD127T4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 4A 4V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 8A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 4MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 8A volts.
MJD127T4G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 4MHz
MJD127T4G Applications
There are a lot of ON Semiconductor
MJD127T4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 4A 4V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 8A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 4MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 8A volts.
MJD127T4G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 4MHz
MJD127T4G Applications
There are a lot of ON Semiconductor
MJD127T4G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD127T4G More Descriptions
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
8.0 A, 100 V PNP Darlington Bipolar Power Transistor
Transistor: PNP; bipolar; -100V; -8A; 20W; -65 150 deg.C; SMD; TO252(DPAK)
ON Semi MJD127T4G PNP Darlington Transistor; 8 A 100 V HFE:100; 3-Pin DPAK
MJD Series 100 V 8 A PNP Complementary Darlington Power Transistor - TO-252-3
TRANS PNP DARL 100V 8A DPAK / Trans Darlington PNP 100V 8A 1750mW 3-Pin(2 Tab) DPAK T/R
Transistor, PNP, -100V, -8A, TO-252-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:4MHz; Power
Transistor Polarity:PNP; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V; Continuous Collector Current:8A RoHS Compliant: Yes
8.0 A, 100 V PNP Darlington Bipolar Power Transistor
Transistor: PNP; bipolar; -100V; -8A; 20W; -65 150 deg.C; SMD; TO252(DPAK)
ON Semi MJD127T4G PNP Darlington Transistor; 8 A 100 V HFE:100; 3-Pin DPAK
MJD Series 100 V 8 A PNP Complementary Darlington Power Transistor - TO-252-3
TRANS PNP DARL 100V 8A DPAK / Trans Darlington PNP 100V 8A 1750mW 3-Pin(2 Tab) DPAK T/R
Transistor, PNP, -100V, -8A, TO-252-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:4MHz; Power
Transistor Polarity:PNP; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V; Continuous Collector Current:8A RoHS Compliant: Yes
The three parts on the right have similar specifications to MJD127T4G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Terminal FinishReach Compliance CodeQualification StatusMounthFE MinView Compare
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MJD127T4GACTIVE (Last Updated: 4 days ago)8 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJTape & Reel (TR)2005e3yesActive1 (Unlimited)2EAR99Other Transistors-100V1.75WGULL WING260-8A40MJD1273R-PSSO-G21PNPSingle20WCOLLECTORSWITCHINGHalogen FreePNP - Darlington100V8A1000 @ 4A 4V10μA4V @ 80mA, 8A100V4MHz2V100V4MHz100V5V8A2.38mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free----------
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---Through HoleTO-251-3 Short Leads, IPak, TO-251AA----65°C~150°C TJTube---Obsolete1 (Unlimited)-------------------NPN - Darlington--1000 @ 2A 3V20μA3V @ 40mA, 4A----25MHz--------Non-RoHS Compliant-I-PAK1.75W100V2A-----
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OBSOLETE (Last Updated: 3 days ago)--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-65°C~150°C TJCut Tape (CT)2005e0noObsolete1 (Unlimited)2EAR99Other Transistors-100V1.75WGULL WING240-2A30MJD1173R-PSSO-G21PNPSingle20WCOLLECTORSWITCHING-PNP - Darlington100V2A1000 @ 2A 3V20μA2V @ 8mA, 2A100V25MHz2V100V25MHz100V5V2A---No SVHC-Non-RoHS CompliantLead Free----Tin/Lead (Sn/Pb)not_compliantNot Qualified--
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-8 Weeks-Through HoleTO-251-3 Short Leads, IPak, TO-251AA--SILICON150°C TJBulk-e3-Active1 (Unlimited)3EAR99Other Transistors-20W-260-30MJD1223R-PSIP-T31NPNSingle20WCOLLECTORSWITCHING-NPN - Darlington100V8A1000 @ 4A 4V10μA4V @ 80mA, 8A100V-2V100V-100V5V-----NoROHS3 CompliantLead Free----Tin (Sn)--Through Hole100
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