ON Semiconductor MJD112RLG

Name: MJD112RLG
Brand: ON Semiconductor
SKU: 3068701-MJD112RLG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MJD112RLG

Manufacturer:: ON Semiconductor

Ventron No:: 3068701-MJD112RLG

Description:: TRANS NPN DARL 100V 2A DPAK

ECAD Model:

Datasheet:: MJD112RLG

Specifications

ON Semiconductor MJD112RLG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MJD112RLG.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
1.75W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
2A
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MJD112
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A 3V
Current - Collector Cutoff (Max)
20μA
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
25MHz
Collector Emitter Saturation Voltage
2V
Max Breakdown Voltage
100V
Frequency - Transition
25MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
2A
Height
2.38mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

MJD112RLG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 2A 3V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 3V @ 40mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 2A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.In the part, the transition frequency is 25MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 2A volts can be achieved.

MJD112RLG Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz

MJD112RLG Applications
There are a lot of ON Semiconductor
MJD112RLG applications of single BJT transistors.

Inverter
Interface
Driver
Muting

MJD112RLG More Descriptions

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
MJD112 Series NPN 1.75 W 100 V 2 A SMT Darlington Transistor - TO-252-3

Product Comparison

The three parts on the right have similar specifications to MJD112RLG.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Polarity

Element Configuration

Case Connection

Transistor Application

Halogen Free

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Continuous Collector Current

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Weight

Frequency

Power Dissipation

Gain Bandwidth Product

Polarity/Channel Type

hFE Min

REACH SVHC

Terminal Finish

Qualification Status

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

View Compare
MJD112RLG

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

8 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

2006

e3

yes

Active

1 (Unlimited)

2

EAR99

Other Transistors

100V

1.75W

GULL WING

260

2A

40

MJD112

3

R-PSSO-G2

1

NPN

Single

COLLECTOR

SWITCHING

Halogen Free

NPN - Darlington

100V

2A

1000 @ 2A 3V

20μA

3V @ 40mA, 4A

100V

25MHz

2V

100V

25MHz

100V

5V

2A

2.38mm

6.73mm

6.22mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
MJD148T4G

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

8 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

2

EAR99

Other Transistors

45V

1.75W

GULL WING

260

4A

40

MJD148

3

R-PSSO-G2

1

-

Single

COLLECTOR

AMPLIFIER

-

NPN

45V

4A

85 @ 500mA 1V

20μA ICBO

500mV @ 200mA, 2A

45V

3MHz

500mV

45V

-

45V

5V

-

6.35mm

6.35mm

6.35mm

No

ROHS3 Compliant

Lead Free

4.535924g

3MHz

1.75W

3MHz

NPN

40

-

-

-

-

-

-

MJD112RLG vs MJD148T4G
MJD127T4G

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

8 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

2

EAR99

Other Transistors

-100V

1.75W

GULL WING

260

-8A

40

MJD127

3

R-PSSO-G2

1

PNP

Single

COLLECTOR

SWITCHING

Halogen Free

PNP - Darlington

100V

8A

1000 @ 4A 4V

10μA

4V @ 80mA, 8A

100V

4MHz

2V

100V

4MHz

100V

5V

8A

2.38mm

6.73mm

6.22mm

No

ROHS3 Compliant

Lead Free

-

-

20W

-

-

-

No SVHC

-

-

-

-

-

MJD112RLG vs MJD127T4G
MJD122-TP

Micro Commercial Co

-

12 Weeks

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

-

EAR99

-

-

-

-

260

-

10

MJD122

3

-

-

-

-

-

-

-

NPN

-

-

1000 @ 4A 4V

10nA

4V @ 80mA, 8A

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

Matte Tin (Sn)

Not Qualified

1.5W

100V

8A

MJD112RLG vs MJD122-TP

Certification

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MJD112RLG Specification

Part Number	Manufacturers	Description	Stock	Price
MJD112RLG DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A Automotive 3-Pin(2 Ta RoHS: Compliant	48	1 $0.5201 10 $0.438 25 $0.4375
MJD112RLG DISTI #	ON Semiconductor	TRANS NPN DARL 100V 2A DPAK RoHS: Compliant	2851	1 $0.62 10 $0.528 100 $0.3946 500 $0.31002
MJD112RLG DISTI #	ON Semiconductor	TRANS NPN DARL 100V 2A DPAK RoHS: Compliant	2851	1 $0.62 10 $0.528 100 $0.3946 500 $0.31002
MJD112RLG DISTI #	ON Semiconductor	TRANS NPN DARL 100V 2A DPAK RoHS: Compliant	1800	1800 $0.23258 3600 $0.21206 5400 $0.19838 12600 $0.1847
MJD112RLG DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A Automotive 3-Pin(2 Ta RoHS: Compliant	25200	3600 $0.2326
MJD112RLG DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A Automotive 3-Pin(2 Ta RoHS: Compliant	48	36 $0.4375
MJD112RLG DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	1800	1800 $0.2559 3600 $0.2099 7200 $0.1919 10800 $0.1769 18000 $0.1649
MJD112RLG DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	0	3600 $0.1699 7200 $0.1639 10800 $0.1609 18000 $0.1609 36000 $0.1599
MJD112RLG DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	0	3600 $0.19874 7200 $0.19109 10800 $0.18402 18000 $0.17744 36000 $0.17133 90000 $0.16562 180000 $0.1629
MJD112RLG DISTI #	ON Semiconductor	DARLINGTON TRANSISTOR, NPN, 100V, D-PAK, Transist	0	1 $0.57 10 $0.471 25 $0.41 50 $0.348 100 $0.287 250 $0.265 500 $0.244 1000 $0.222
MJD112RLG. DISTI #	ON Semiconductor	BIP DPAK NPN 2A 100V TR , ROHS COMPLIANT: YES	0	1 $0.17 7200 $0.164 10800 $0.161 36000 $0.16
MJD112RLG DISTI #	ON Semiconductor	Darlington Transistors 2A 100V Bipolar Power NPN RoHS: Compliant	8685	1 $0.57 10 $0.471 100 $0.287 1000 $0.222 1800 $0.189 9000 $0.176 23400 $0.167 48600 $0.163
MJD112RL DISTI #	ON Semiconductor	Darlington Transistors 2A 100V Bipolar RoHS: Not Compliant	0
MJD112RLG DISTI #	ON Semiconductor	RoHS: Not Compliant	21754	1 $0.25 25 $0.24 100 $0.23 500 $0.22 1000 $0.21
MJD112RLG DISTI #	ON Semiconductor	INSTOCK	584
MJD112RLG DISTI #	ON Semiconductor	INSTOCK	2512
MJD112RLG DISTI #		EEPROM, 8KX1, Serial, CMOS, PDSO8 RoHS: Compliant	3261	1800 $0.248 3261 $0.2325
MJD112RLG DISTI #	ON Semiconductor	Complementary Darlington Power Transistors	2200	1 $0.36 100 $0.28 500 $0.25 1000 $0.24
MJD112RLG DISTI #	ON Semiconductor	Trans Darlington NPN 100V 2A 1750mW Automotive 3-P RoHS: Compliant	48	10 $0.438 25 $0.4375

MJD112R~~(1)~~
MJD112~~(20)~~
MJD11~~(29)~~
MJD1~~(62)~~
MJD~~(114)~~

ON Semiconductor MJD112RLG

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