STMicroelectronics MJD127T4
- Part Number:
- MJD127T4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3068706-MJD127T4
- Description:
- TRANS PNP DARL 100V 8A DPAK
- Datasheet:
- MJD127T4
STMicroelectronics MJD127T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MJD127T4.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageDPAK
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max1.75W
- Transistor TypePNP - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A 4V
- Current - Collector Cutoff (Max)10μA
- Vce Saturation (Max) @ Ib, Ic4V @ 80mA, 8A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)8A
- Frequency - Transition4MHz
- RoHS StatusNon-RoHS Compliant
MJD127T4 Overview
This device has a DC current gain of 1000 @ 4A 4V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of DPAK.Detection of Collector Emitter Breakdown at 100V maximal voltage is present.
MJD127T4 Features
the DC current gain for this device is 1000 @ 4A 4V
the vce saturation(Max) is 4V @ 80mA, 8A
the supplier device package of DPAK
MJD127T4 Applications
There are a lot of Rochester Electronics, LLC
MJD127T4 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 1000 @ 4A 4V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of DPAK.Detection of Collector Emitter Breakdown at 100V maximal voltage is present.
MJD127T4 Features
the DC current gain for this device is 1000 @ 4A 4V
the vce saturation(Max) is 4V @ 80mA, 8A
the supplier device package of DPAK
MJD127T4 Applications
There are a lot of Rochester Electronics, LLC
MJD127T4 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
MJD127T4 More Descriptions
Tape & Reel (TR) Surface Mount PNP - Darlington Single Bipolar (BJT) Transistor 1000 @ 4A 4V 10muA 20W 100V
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
MJD127 Series PNP 100 V 8 A Complementary Power Darlington Transistor - TO-252-3
Trans Darlington PNP 100V 8A 20000mW 3-Pin(2 Tab) TO-252 T/R
DARLINGTON, BIPOLAR, TRANSISTOR; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 5A; DC Current Gain hFE: 1000hFE; Transistor Cas
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
MJD127 Series PNP 100 V 8 A Complementary Power Darlington Transistor - TO-252-3
Trans Darlington PNP 100V 8A 20000mW 3-Pin(2 Tab) TO-252 T/R
DARLINGTON, BIPOLAR, TRANSISTOR; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 5A; DC Current Gain hFE: 1000hFE; Transistor Cas
The three parts on the right have similar specifications to MJD127T4.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackagePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionRoHS StatusLifecycle StatusFactory Lead TimeContact PlatingSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsPolarityElement ConfigurationCase ConnectionTransistor ApplicationHalogen FreeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthRadiation HardeningLead FreeTerminal FinishQualification StatusMountPower DissipationhFE MinView Compare
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MJD127T4Surface MountTO-252-3, DPak (2 Leads Tab), SC-63DPAKTape & Reel (TR)Obsolete1 (Unlimited)1.75WPNP - Darlington1000 @ 4A 4V10μA4V @ 80mA, 8A100V8A4MHzNon-RoHS Compliant------------------------------------------------
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-Tape & Reel (TR)Active1 (Unlimited)-NPN - Darlington1000 @ 2A 3V20μA3V @ 40mA, 4A--25MHzROHS3 CompliantACTIVE (Last Updated: 3 days ago)8 WeeksTinYES3SILICON-65°C~150°C TJ2006e3yes2EAR99Other Transistors100V1.75WGULL WING2602A40MJD1123R-PSSO-G21NPNSingleCOLLECTORSWITCHINGHalogen Free100V2A100V25MHz2V100V100V5V2A2.38mm6.73mm6.22mmNoLead Free-----
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-Tape & Reel (TR)Active1 (Unlimited)1.5WNPN1000 @ 4A 4V10nA4V @ 80mA, 8A100V8A-ROHS3 Compliant-12 Weeks----150°C TJ2005e3yes-EAR99----260-10MJD1223---------------------Matte Tin (Sn)Not Qualified---
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Through HoleTO-251-3 Short Leads, IPak, TO-251AA-BulkActive1 (Unlimited)-NPN - Darlington1000 @ 4A 4V10μA4V @ 80mA, 8A---ROHS3 Compliant-8 Weeks---SILICON150°C TJ-e3-3EAR99Other Transistors-20W-260-30MJD1223R-PSIP-T31NPNSingleCOLLECTORSWITCHING-100V8A100V-2V100V100V5V----NoLead FreeTin (Sn)-Through Hole20W100
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